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Part: IXGT35N120B
Category:
Discrete
-> IGBTs (Insulated Gate Bipolar Transistors)
-> Low Voltage < 600 Volts
Description: 1200V Hiperfast Igbt
Company: IXYS Corporation
Datasheet: Download IXGT35N120B datasheet File size : 207 kB
Request For quote: Find where to buy IXGT35N120B
Datasheet text preview:
Advance Technical Information
HiPerFASTTM IGBT
I X G H 35N120B I X G T 35N120B
VCES = 1200 V = 70 A IC2 VCE(sat) = 3.3 V tfi(typ) = 160 ns
Symbol V CES VCGR V GES V GEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 5 W Clamped inductive load TC = 25°C
Maximum Ratings 1200 1200 ±20 ±30 70 35 140 ICM = 90 @ 0.8 VCES 300 -55 ... +150 150 -55 ... +150 300 260 V V V V A A A A
TO-268 (IXGT)
G E C (TAB)
TO-247 AD (IXGH)
G
C (TAB) C E
W °C °C °C °C °C Features G = Gate, E = Emitter,
C = Collector, TAB = Collector
Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3)
1.13/10 Nm/lb.in. TO-247 AD TO-268 6 4 g g
· International standard packages JEDEC TO-268 and JEDEC TO-247 AD · Low switching losses, low V( s a t ) · MOS Gate turn-on - drive simplicity Applications
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 2.5 TJ = 25°C TJ = 125°C V V mA mA nA V V
B V CES V GE(th) ICES I GES V CE(sat)
IC IC
= 1 mA, VGE = 0 V = 750 mA, VCE = VGE
5 250 5 ±100 3.3
· · · · ·
AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies
VCE = VCES VG E = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V
Advantages · High power density · Suitable for surface mounting · Easy to mount with 1 screw, (isolated mounting screw hole)
TJ = 125°C
2.7
IXYS reserves the right to change limits, test conditions, and dimensions.
98665 (11/99)
© 2000 IXYS All rights reserved
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I X G H 35N120B I X G T 35N120B
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 30 40 4620 VCE = 25 V, VGE = 0 V, f = 1 MHz 260 90 170 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 28 57 Inductive load, TJ = 25°C IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 5 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 · VCES, higher TJ or increased RG Inductive load, TJ = 125°C IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 5 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 · VCES, higher TJ or increased RG 50 27 180 160 3.8 55 31 2.6 300 360 8.0 280 320 7.3 S pF pF pF nC nC nC ns ns ns ns mJ ns ns mJ ns ns mJ TO-268AA (D3 PAK) 0.42 K/W (TO-247) (TO-268) 0.25 0.3 K/W K/W
Dim. Millimeter Min. Max. A B C D E F G H J K L M N 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102
TO-247 AD (IXGH) Outline
gf s C ies Coes Cres Qg Qge Qgc td(on) t ri td(off) t fi Eoff td(on) t ri Eon td(off) t fi Eoff RthJC RthCK
IC = IC90; VCE = 10 V, Pulse test, t £ 300 ms, duty cycle £ 2 %
1.5 2.49
Min. Recommended Footprint
Dim. A A1 A2 b b2 C D E E1 e H L L1 L2 L3 L4 Millimeter Min. Max. 4.9 5.1 2.7 2.9 .02 .25 1.15 1.45 1.9 2.1 .4 .65 13.80 14.00 15.85 16.05 13.3 13.6 5.45 BSC 18.70 19.10 2.40 2.70 1.20 1.40 1.00 1.15 0.25 BSC 3.80 4.10 Inches Min. Max. .193 .201 .106 .114 .001 .010 .045 .057 .75 .83 .016 .026 .543 .551 .624 .632 .524 .535 .215 BSC .736 .752 .094 .106 .047 .055 .039 .045 .010 BSC .150 .161
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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