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Part: IXGT39N60BD1
Category:
Discrete
-> IGBTs (Insulated Gate Bipolar Transistors)
-> IGBT with FAST Diodes
Description:
Company: IXYS Corporation
Datasheet: Download IXGT39N60BD1 datasheet File size : 207 kB
Request For quote: Find where to buy IXGT39N60BD1
Datasheet text preview:
HiPerFASTTM IGBT
IXGH39N60B IXGH39N60BD1 IXGT39N60B IXGT39N60BD1
VCES IC 2 5 VCE(sat) tfi
= = = =
600 V 76 A 1.7 V 200 ns
Preliminary data
(D1)
Symbol V CES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 M Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 Clamped inductive load TC = 25°C
Maximum Ratings 600 600 ±20 ±30 76 39 152 ICM = 76 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 300 V V V V A A A A W °C °C °C °C
TO-268 (IXGT)
G
E
C (TAB)
TO-247 AD (IXGH)
G
C (TAB) C E
G = Gate, E = Emitter,
C = Collector, TAB = Collector
Features nternational standard packages JEDEC TO-247 AD & TO-268 H igh current handling capability N ewest generation HDMOSTM process M OS Gate turn-on - drive simplicity
I
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (M3) TO-247
1.13/10Nm/lb.in. TO-247 AD TO-268 6 4 g g
Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 39N60B 39N60BD1 39N60B 39N60BD1 39N60B 39N60B 39N60BD1 600 600 2.5 2.5 5.0 5.0 200 1 3 ±1 0 0 1.7 V V V µA mA mA nA V FC circuits C motor speed control D C servo and robot drives D C choppers U ninterruptible power supplies (UPS) S witched-mode and resonant-mode power supplies
P A
BVCES VGE(th) I CES
IC IC IC IC
= 250 µA, VGE = 0 V = 750 µA = 250 µA, VCE = VGE = 500 µA
Advantages igh power density ery fast switching speeds for high frequency applications
H V
VCE = 0.8 · VCES TJ = 25°C VGE = 0 V TJ = 125°C
TJ = 125°C
IG E S VCE(sat)
VCE = 0 V, VGE = ±20 V IC = I90, VGE = 15 V
© 2003 IXYS All rights reserved
DS97548A(02/03)
IXGH39N60B IXGT39N60B IXGH39N60BD1 I X G T 3 9 N 6 0 B D 1
Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 19 28 2750 VCE = 25 V, VGE = 0 V, f = 1 MHz 39N60B 39N60BD1 200 240 50 110 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25°C ° IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 4.7 Remarks: Switching times may increase for VCE (Clamp) > 0.8 · VCES, higher TJ or increased RG Inductive load, TJ = 125°C ° IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 4.7 Remarks: Switching times may increase for VCE (Clamp) > 0.8 · VCES, higher TJ or increased RG 25 40 25 30 250 200 4.0 25 30 0.3 360 350 6.0 500 360 150 35 75 S
P
TO-247 AD Outline
gfs Cies Coes Cres QG QGE QGC td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
IC = IC90; VCE = 10 V, Pulse test, t 300 µs, duty cycle 2 %
pF pF pF pF nC nC nC ns ns ns ns
Dim.
e
6.0 m J ns ns mJ ns ns mJ 0.62 K/W
Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
0.25
K/W
Reverse Diode (FRED) Symbol VF IRM t rr RthJC Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. TJ =150°C TJ = 25°C typ. max. 1.6 2.5 V V A ns ns 0.9 K/W
IF = IC90, VGE = 0 V, Pulse test t 300 µs, duty cycle d 2 %
IF = IC90, VGE = 0 V, -diF/dt = 100 A/µs 6 VR = 100 V TJ = 1 0 0°C 1 0 0 IF = 1 A; -di/dt = 100 A/µs; VR = 30 V TJ = 25°C 25
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1
IXGH39N60B IXGT39N60B IXGH39N60BD1 I X G T 3 9 N 6 0 B D 1
Fi g. 1. Saturation Voltage Characteristics @ 25 Deg. C
40 35 30 IC - Amperes 25 20 15 10 5 0 0.4 0.8 1.2 1.6 VCE - Volts 2 2.4
5V V GE=15V 13V 11V 9V
Fig. 2. Extended Output Characteristics @ 25 Deg. C
160 140 120 IC - Amperes
V GE=15V 13V 11V
7V
100 80 60 40 20 0 0 1 2 3
9V
7V
5V
4
5
V CE - Volts
Fig. 3. Saturation Voltage Characteristics @ 125 Deg. C
100 80 IC - Amperes 60 40 20
5V V GE=15V 13V 11V 9V V CE (S AT) - Normalized
Fig. 4. Temperature Dependence of VC E(SAT)
1.4 5 1 .3 1.1 5 1 0.8 5
IC=19.5A IC =39A IC=78A
7V
0
0 .7
0
1
2
3
4
5
-5 0
-25
0
25
50
75
100 1 25 150
V CE - Volts
TJ - Degrees Centigrade
Fi g. 5. BVC ES & V (GE)TH vs. Junction Temperature
1 .2
BVCES & V(GE)TH - Normalized
Fig. 6. Admittance
100
1 .1 1 0 .9 0 .8 0 .7 -5 0 -2 5
V GE(TH)
BV CES
80 IC - Amperes 60 40 20 0
TJ= 125°C 25°C -40°C
0
25
50
75
1 00 12 5 15 0
4
5
6
7
8
9
TJ - Degrees Centigrade
VGE - Volts
© 2003 IXYS All rights reserved
Others parts begin by ix
IX-1 IX-2 IX-3 IX-4 IX-5 IX-6 IX-7 IX-8
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