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Details, datasheet, quote on part number:MWI15-12A7
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| Part: | MWI15-12A7 |
| Category: | Discrete => IGBTs (Insulated Gate Bipolar Transistors) => IGBT Modules |
| Description: | Igbt Modules Sixpack: Short Circuit Soa Capability Square Rbsoa |
| Company: | IXYS Corporation |
| Datasheet: | Download MWI15-12A7 datasheet File size : 194 kB |
| Request For quote: | Find where to buy MWI15-12A7
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Datasheet text preview:
MWI 15-12 A7
IGBT Modules Sixpack
Short Circuit SOA Capability Square RBSOA
13
IC25 = 30 A = 1200 V VC E S VCE(sat) typ. = 2.0 V
Preliminary Data
1 2
5 6
9 10 16 15 14
3 4 17
7 8
11 12
IGBTs Symbol VCES VGES IC25 IC80 RBSOA tSC (SCSOA) Ptot TC = 25°C TC = 80°C VGE = ±15 V; RG = 82 W; TVJ = 125°C Clamped inductive load; L = 100 µH VCE = VCES; VGE = ±15 V; RG = 82 W; TVJ = 125°C non-repetitive TC = 25°C Conditions TVJ = 25°C to 150°C Maximum Ratings 1200 ± 20 30 20 IC M = 35 VCEK £ VCES 10 140 V V A A A µs W
Features NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes solderable pins for PCB mounting package with copper base plate
q q q q q q q q q q q
Advantages
q q q
Symbol
Conditions
Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.0 2.3 4.5 0.8 200 100 75 500 70 2.3 1.8 1000 70 2.6 6.5 0.9 V V V mA mA nA ns ns ns ns mJ mJ pF nC 0.88 K/W
space savings reduced protection circuits package designed for wave soldering
Typical Applications
q q
VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC
IC = 15 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 0.6 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V
q
AC motor control AC servo and robot drives power supplies
Inductive load, TVJ = 125°C VCE = 600 V; IC = 15 A VGE = ±15 V; RG = 82 W
VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600V; VGE = 15 V; IC = 15 A (per IGBT)
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
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021
MWI 15-12 A7
Diodes Symbol IF25 IF80 Conditions TC = 25°C TC = 80°C Maximum Ratings 25 17 A A
Equivalent Circuits for Simulation
Conduction
Symbol VF IRM t rr RthJC Module Symbol T VJ Tstg VISOL Md Symbol Rpin-chip dS dA RthCH Weight
Conditions IF = 15 A; VGE = 0 V; TVJ = 25°C TVJ = 125°C IF = 15 A; diF/dt = -400 A/µs; TVJ = 125°C VR = 600 V; VGE = 0 V (per diode)
Characteristic Values min. typ. max. 2.4 1.7 16 130 2.7 V V A ns 2 . 1 K/W
IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 1.37 V; R0 = 62 m Free Wheeling Diode (typ. at TJ = 125°C) V0 = 1.327 V; R0 = 30 m Thermal Response
Conditions
Maximum Ratings -40...+150 -40...+125 °C °C V~ Nm
IGBT (typ.) Cth1 = 0.156 J/K; Rth1 = 0.685 K/W Cth2 = 1.162 J/K; Rth2 = 0.195 K/W Free Wheeling Diode (typ.) Cth1 = 0.065 J/K; Rth1 = 1.758 K/W Cth2 = 0.639 J/K; Rth2 = 0.342 K/W
IISOL 1 mA; 50/60 Hz Mounting torque (M5) Conditions
2500 2.7 - 3.3
Characteristic Values min. typ. max. 5 m mm mm 0.02 180 K/W g
Creepage distance on surface Strike distance in air with heatsink compound
6 6
Dimensions in mm (1 mm = 0.0394")
Higher magnification see outlines.pdf
© 2000 IXYS All rights reserved
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MWI 15-12 A7
50
A 40
VGE = 17V 15V 13V 11V
50 A 40 30
11V VGE = 17V 15V 13V
IC
IC
30 20 10 0 0 1 2 3 4
VCE
20 10 0
9V TVJ = 125°C
9V TVJ = 25°C
5
6V7
0
1
2
3
4
5 VCE
6V7
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
50
A 40 IC
50 40 A 30
TVJ = 125°C TVJ = 25°C
IF
30 20
TVJ = 125°C TVJ = 25°C
20 10
VCE = 20V
10 0 4 6 8 10 12 VGE
0
14 V 16
0
1
2
VF
3
V
4
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of free wheeling diode
40
trr
20
V
200 160 ns 120
15
VGE
IRM
A 30
trr
10
20
80
5
VCE = 600V IC = 15A
10
IRM
TVJ = 125°C VR = 600V IF = 15A
MWI1512A7
40 0
0 0 20 40 60
QG
0 80 nC 100 0 200 400
600 8A0 s 0 /m -di/dt
1000
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of free wheeling diode
© 2000 IXYS All rights reserved
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