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Details, datasheet, quote on part number:MWI25-12A7
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| Part: | MWI25-12A7 |
| Category: | Discrete => IGBTs (Insulated Gate Bipolar Transistors) => IGBT Modules |
| Description: | Igbt Modules Sixpack Short Circuit Soa Capability Square Rbsoa |
| Company: | IXYS Corporation |
| Datasheet: | Download MWI25-12A7 datasheet File size : 106 kB |
| Request For quote: | Find where to buy MWI25-12A7
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Datasheet text preview:
MWI 25-12 E7
IGBT Module Sixpack
Short Circuit SOA Capability Square RBSOA
13 1 2 5 6 9 10 16 15 14
IC25 = 52 A = 1200 V VCES VCE(sat) typ. = 1.9 V
3 4 17
7 8
11 12
IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK tSC Ptot TC = 25°C TC = 80°C VGE = ±15 V; RG = 39 ; TVJ = 125°C RBSOA; clamped inductive load; L = 100 µH VCE = 900 V; VGE = ±15 V; RG = 39 ; TVJ = 125°C SCSOA; non-repetitive TC = 25°C Conditions TVJ = 25°C to 150°C Maximum Ratings 1200 ± 20 52 36 50 VCES 10 225 V V A A A µs W
Features · NPT3 IGBTs - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance also in resonant circuits · HiPerFREDTM diode: - fast reverse recovery - low operating forward voltage - low leakage current · Industry Standard Package - solderable pins for PCB mounting - isolated copper base plate
Symbol
Conditions
Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 1.9 2.1 4.5 0.4 200 80 50 440 50 3.8 2.0 2 250 2.4 6.5 0.4 V V V mA mA nA ns ns ns ns mJ mJ nF nC 0.55 K/W
Typical Applications · AC drives · power supplies with power factor correction
VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC
IC = 25 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 1 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C
VCE = 0 V; VGE = ± 20 V
Inductive load, TVJ = 125°C VCE = 600 V; IC = 25 A VGE = ±15 V; RG = 39
VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 25 A (per IGBT)
IXYS reserves the right to change limits, test conditions and dimensions.
© 2003 IXYS All rights reserved
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MWI 25-12 E7
Diodes Symbol IF25 IF80 Conditions TC = 25°C TC = 80°C Maximum Ratings 50 33 A A
Equivalent Circuits for Simulation
Conduction
Symbol VF IRM t rr Erec(off) RthJC Module Symbol T VJ Tstg VISOL Md Symbol Rpin-chip dS dA RthCH Weight
Conditions IF = 25 A; VGE = 0 V; TVJ = 25°C TVJ = 125°C IF = 30 A; diF/dt = -1100 A/µs; TVJ = 125°C VR = 600 V; VGE = 0 V (per diode)
Characteristic Values min. typ. max. 2.3 1.7 51 180 1.8 2.7 V V A ns mJ 1.19 K/W
IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 0.95 V; R0 = 48 m Free Wheeling Diode (typ. at TJ = 125°C) V0 = 1.3 V; R0 = 16.0 m Thermal Response
Conditions
Maximum Ratings -40...+150 -40...+125 °C °C V~ Nm
Free Wheeling Diode (typ.) Cth1 = 0.069 J/K; Rth1 = 0.956 K/W Cth2 = 0.847 J/K; Rth2 = 0.234 K/W
IISOL 1 mA; 50/60 Hz Mounting torque (M5) Conditions
2500 2.7 - 3.3
IGBT (typ.) Cth1 = 0.129 J/K; Rth1 = 0.415 K/W Cth2 = 1.279 J/K; Rth2 = 0.135 K/W
Characteristic Values min. typ. max. 5 m mm mm 0.02 180 K/W g
Creepage distance on surface Strike distance in air with heatsink compound
6 6
Dimensions in mm (1 mm = 0.0394")
© 2003 IXYS All rights reserved
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MWI 25-12 E7
120
A 120 A 100 IC 80 60
11 V 11 V 13 V
VGE = 17 V
15 V 13 V
VGE = 17 V
15 V
100
IC
80 60 40 20 0 0 1 2 3 4
V CE
40
9V TVJ = 25°C
20 0
9V TVJ = 125°C
5
6V7
0
1
2
3
4
5
VCE
6V7
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
120
A
VCE = 20 V
100
IC IF
90 A 75 60 45
TVJ = 125°C TVJ = 25°C
80 60 40
TVJ = 125°C
30 15
TVJ = 25°C
20 0 4 6 8 10 12
VGE
0
14 V 16
0
1
2
VF
3
V
4
Fig. 3 Typ. transfer characteristics
Fig. 4
Typ. forward characteristics of free wheeling diode
20
V
10 K/W 1 ZthJC 0.1 0.01 0.001
diode IGBT
15
VGE
10
5
VCE = 600 V IC = 35 A
single pulse
0.0001 0.00001
MU BW3512E7
0 0 40 80 120 160nC
QG
200
0. 00001 0.0 001
0. 001
0.0 1
0. 1
1
s 10
t
Fig. 5
Typ. turn on gate charge
Fig. 6
Typ. transient thermal impedance 3-4
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© 2003 IXYS All rights reserved
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