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Details, datasheet, quote on part number:MWI50-06A7
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| Part: | MWI50-06A7 |
| Category: | Discrete => IGBTs (Insulated Gate Bipolar Transistors) => IGBT Modules |
| Description: | Igbt Modules Sixpack Short Circuit Soa Capability Square Rbsoa |
| Company: | IXYS Corporation |
| Datasheet: | Download MWI50-06A7 datasheet File size : 124 kB |
| Request For quote: | Find where to buy MWI50-06A7
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Datasheet text preview:
MWI 50-06 A7 MWI 50-06 A7T
IGBT Modules Sixpack
Short Circuit SOA Capability Square RBSOA
13
IC25 = 72 A = 600 V VC E S VCE(sat) typ. = 1.9 V
Preliminary Data
1 2
5 6
9 10 16 15 14
T
NTC
Type: MWI 50-06 A7 MWI 50-06 A7T
NTC - Option: without NTC with NTC
3 4 17 7 8 11 12
T
IGBTs Symbol VCES VGES IC25 IC80 RBSOA tSC (SCSOA) Ptot TC = 25°C TC = 80°C VGE = ±15 V; RG = 22 W; TVJ = 125°C Clamped inductive load; L = 100 µH Conditions TVJ = 25°C to 150°C Maximum Ratings 600 ± 20 72 50 IC M = 100 VCEK £ VCES 10 225 V V A A A µs W
VCE = VCES; VGE = ±15 V; RG = 22 W; TVJ = 125°C non-repetitive TC = 25°C
Features NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes solderable pins for PCB mounting package with copper base plate
q q q q q q q q q q q
Advantages
q q q
Symbol
Conditions
Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 1.9 2.2 4.5 0.7 200 50 60 300 30 2.3 1.7 2800 120 2.4 6.5 0.6 V V V mA mA nA ns ns ns ns mJ mJ pF nC 0.55 K/W
space savings reduced protection circuits package designed for wave soldering
Typical Applications
q q
VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC
IC = 50 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 1 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V
q
AC motor control AC servo and robot drives power supplies
Inductive load, TVJ = 125°C VCE = 300 V; IC = 50 A VGE = ±15 V; RG = 22 W
VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 300V; VGE = 15 V; IC = 50 A (per IGBT)
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
1-4
023
MWI 50-06 A7 MWI 50-06 A7T
Diodes Symbol IF25 IF80 Conditions TC = 25°C TC = 80°C Maximum Ratings 72 45 A A Equivalent Circuits for Simulation
Conduction
Symbol VF IRM t rr RthJC
Conditions IF = 50 A; VGE = 0 V; TVJ = 25°C TVJ = 125°C IF = 30 A; diF/dt = -500 A/µs; TVJ = 125°C VR = 300 V; VGE = 0 V (per diode)
Characteristic Values min. typ. max. 1.6 1.3 25 90 1.8 1.5 V V A ns 1.19 K/W
IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 0.82 V; R0 = 28 mW Free Wheeling Diode (typ. at TJ = 125°C) V0 = 0.89 V; R0 = 8 mW Thermal Response
Temperature Sensor NTC (MWI ... A7T version only) Symbol R25 B25/50 Module Symbol T VJ Tstg VISOL Md Symbol Rpin-chip dS dA RthCH Weight Creepage distance on surface Strike distance in air with heatsink compound 6 6 0.02 180 IISOL £ 1 mA; 50/60 Hz Mounting torque (M5) Conditions Conditions Maximum Ratings -40...+150 -40...+125 2500 2.7 - 3.3 °C °C V~ Nm Conditions T = 25°C Characteristic Values min. typ. max. 4.75 5.0 3375 5.25 k W K
IGBT (typ.) Cth1 = 0.201 J/K; Rth1 = 0.42 K/W Cth2 = 1.252 J/K; Rth2 = 0.131K/W Free Wheeling Diode (typ.) Cth1 = 0.116 J/K; Rth1 = 0.973 K/W Cth2 = 0.88 J/K; Rth2 = 0.217 K/W
Dimensions in mm (1 mm = 0.0394")
Characteristic Values min. typ. max. 5 mW mm mm K/W g
Higher magnification see outlines.pdf
© 2000 IXYS All rights reserved
2-4
MWI 50-06 A7 MWI 50-06 A7T
150
A 120
VGE= 17V 15V 13V
150 A 120 90
11V VGE= 17V 15V 13V
IC
IC
90 60 30 0 0 1 2 3 4 VCE 5
V
9V TVJ = 25°C
11V
60 30 0
9V TVJ = 125°C
6
0
1
2
3
4 VCE
5V
6
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
150
A 120 IC
90 A 75 IF 60
90
45
60
TVJ = 125°C
TVJ = 125°C
TVJ = 25°C
30
TVJ = 25°C
30 0 4 6 8 10 12 VGE
VCE = 20V
15 0 0.0
14 V 16
0.5
1.0
VF
1.5
V
2.0
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of free wheeling diode
50 40 A
IRM
20
V
150 120 ns 90 60
TVJ = 125°C VR = 300V IF = 30A
MWI5006A7
15
VGE
trr
trr
30 10 20 5
VCE = 300V IC = 50A
10
IRM
30 0
0 0 40 80 120 QG
nC
0 160 0 200 400
600 8A0 s 0 /m -di/dt
1000
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of free wheeling diode
© 2000 IXYS All rights reserved
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