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Details, datasheet, quote on part number:MWI50-12A5
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| Part: | MWI50-12A5 |
| Category: | Discrete => IGBTs (Insulated Gate Bipolar Transistors) => IGBT Modules |
| Description: | Igbt Modules Sixpack Short Circuit Soa Capability Square Rbsoa |
| Company: | IXYS Corporation |
| Datasheet: | Download MWI50-12A5 datasheet File size : 125 kB |
| Request For quote: | Find where to buy MWI50-12A5
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Datasheet text preview:
MWI 50-12 A5
IGBT Modules Sixpack
IC25 = 60 A = 1200 V VC E S VCE(sat) typ. = 2.2 V
Short Circuit SOA Capability Square RBSOA
W1 I 10 K10
A10 B10
R10 S10 F3 K3 P3
E10 F10 A1
M10 N10
V10 W10
E 72873
Preliminary data
Symbol V CES V CGR V GES VGEM IC 2 5 IC 8 0 ICM tSC (SCSOA) RBSOA Ptot TJ Tstg VISOL
Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 k Continuous Transient TC = 25°C TC = 80°C TC = 80°C, tP = 1 ms VGE = ±15 V, VCE = VCES, TJ = 125°C RG = 47 , non repetitive VGE = ±15 V, TJ = 125°C, RG = 47 Clamped inductive load, L = 100 µH TC = 25°C
Maximum Ratings 1200 1200 ±20 ±30 60 40 80 10 ICM = 70 VCEK < VCES 280 150 -40 ... +150 V V V V A A A µs A W °C °C V~ V~ Nm lb.in. mm mm m/s2 g oz.
Features NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes solderable pins for PCB mounting package with DCB ceramic base plate isolation voltage 4800 V UL registered E72873
q q q q q q q q q q q q q
Advantages
q q q
space and weight savings reduced protection circuits package designed for wave soldering
50/60 Hz, RMS t = 1 min IISOL 1 mA t=1s Insulating material: Al2O3 Mounting torque (M5) Creepage distance on surface Strike distance through air Max. allowable acceleration Typical
4000 4800 2.0 - 2.5 18 - 22 9 9 50 80 2.8
Typical Applications
q q q
Md dS dA a Weight
AC motor control AC servo and robot drives power supplies
Data according to a single IGBT/FRED unless otherwise stated.
©1998 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627
IXYS reserves the right to change limits, test conditions and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670
842
MWI 50-12 A5
Symbol Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 4.5 TJ = 25°C TJ = 125°C 3.5 6.5 V V
Dimensions in mm (1 mm = 0.0394")
V (BR)CES VGE(th) IC E S IG E S VC E ( s a t ) Cies Coes Cres td ( o n ) tr td ( o f f ) tf Eon Eoff RthJC RthJS
VGE = 0 V IC = 1.2 mA, VCE = VGE VCE = VCES VCE = 0 V, VGE = ±20 V IC = 35 A, VGE = 15 V VCE = 25 V, VGE = 0 V, f = 1 MHz
2 mA mA ±200 nA V pF pF pF ns ns ns ns mJ mJ 0.44 K/W K/W
2.2 2000 300 140 100
2.8
Inductive load, TJ = 125°C ° IC = 35 A, VGE = ±15 V VCE = 600 V, RG = 47
80 500 70 5.4 4.2
with heatsink compound
0.88
Reverse Diode (FRED)
Characteristic Values min. typ. 2.6 2.1 max. 2.8 2.5 50 30 20 200 2.6 V V A A A ns 1.3 K/W K/W
Equivalent Circuits for Simulation
Conduction
VF IF IRM t rr RthJC RthJS
IF = 35 A, VGE = 0 V IF = 35 A, VGE = 0 V, TJ = 125°C TC = 25°C TC = 80°C IF = 35 A, VGE = 0 V, -diF/dt = 400 A/µs TJ = 125°C, VR = 600 V with heatsink compound
IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 1.6 V; R0 = 28.0 m Free Wheeling Diode (typ. at TJ = 125°C) V0 = 1.3 V; R0 = 24.9 m Thermal Response
IGBT (typ.) Cth1 = 0.10 J/K; Rth1 = 0.430 K/W Cth2 = 0.25 J/K; Rth2 = 0.010 K/W Free Wheeling Diode (typ.) Cth1 = 0.05 J/K; Rth1 = 1.313 K/W Cth2 = 0.09 J/K; Rth2 = 0.025 K/W ©1998 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 IXYS reserves the right to change limits, test conditions and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670
842
MWI 50-12 A5
80
A 70 IC
TJ = 25°C
VGE=17V 15V 13V 11V
80 A 70 IC 60
TJ = 125°C
VGE=17V 15V 13V
60 50 40 30 20 10 0 0.0 0.5 1.0 1.5 2.0 2.5
VCE
50 40 30
11V
9V
9V
20 10
3.0 V
0 0.0
0.5
1.0
1.5
2.0
2.5 3.0 VCE
3.5 V
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
80
A 70 IC
VCE = 20V TJ = 25°C
80 A0 7 IF 60 50 40 30 20 10 0
TJ = 25°C TJ = 125°C
60 50 40 30 20 10 0 5 6 7 8 9 10
VGE
11 V
0
1
2
VF
3
V
4
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of free wheeling diode
60
A IRM
trr
20 V VCE = 600V
IC = 35A
300
ns trr
VGE
15
40 10 20 5
TJ = 125°C VR = 600V IF = 35A
200
IRM
100
50-12
0 0 20 40 60 80 100 120 140 160 nC QG
0 0 200 400
600 8A0 s 0 /µ -di/dt
0
1000
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of free wheeling diode
©1998 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627
IXYS reserves the right to change limits, test conditions and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670
842
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