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Details, datasheet, quote on part number:MWI50-12A7T
 
 
Part:MWI50-12A7T
Category:Discrete => IGBTs (Insulated Gate Bipolar Transistors) => IGBT Modules => 3-phase output (Sixpack configuration)
Description:
Company:IXYS Corporation
Datasheet:Download MWI50-12A7T datasheet   File size : 114 kB
Request For quote:  Find where to buy MWI50-12A7T
 



Datasheet text preview:
MWI 50-12 A7 MWI 50-12 A7T
IGBT Modules Sixpack
Short Circuit SOA Capability Square RBSOA
13
IC25 = 85 A = 1200 V VC E S VCE(sat) typ. = 2.2 V
Preliminary Data
Type: MWI 50-12 A7 MWI 50-12 A7T NTC - Option: without NTC with NTC
1 2
5 6
9 10 16 15 14
T
NTC
3 4 17
7 8
11 12
T
IGBTs Symbol VCES VGES IC25 IC80 RBSOA tSC (SCSOA) Ptot TC = 25°C TC = 80°C VGE = ±15 V; RG = 22 W; TVJ = 125°C Clamped inductive load; L = 100 µH Conditions TVJ = 25°C to 150°C Maximum Ratings 1200 ± 20 85 60 IC M = 100 VCEK £ VCES 10 350 V V A A A µs W
VCE = VCES; VGE = ±15 V; RG = 22 W; TVJ = 125°C non-repetitive TC = 25°C
Features NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes solderable pins for PCB mounting package with copper base plate
q q q q q q q q q q q
Advantages
q q q
Symbol
Conditions
Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.2 2.5 4.5 3 200 100 70 500 70 7.6 5.6 3300 230 2.7 6.5 4 V V V mA mA nA ns ns ns ns mJ mJ pF nC 0.35 K/W
space savings reduced protection circuits package designed for wave soldering
Typical Applications
q q
VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC
IC = 50 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 2 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V
q
AC motor control AC servo and robot drives power supplies
Inductive load, TVJ = 125°C VCE = 600 V; IC = 50 A VGE = ±15 V; RG = 22 W
VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600V; VGE = 15 V; IC = 50 A (per IGBT)
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
1-4
023
MWI 50-12 A7 MWI 50-12 A7T
Diodes Symbol IF25 IF80 Conditions TC = 25°C TC = 80°C Maximum Ratings 110 70 A A Equivalent Circuits for Simulation
Conduction
Symbol VF IRM t rr RthJC
Conditions IF = 50 A; VGE = 0 V; TVJ = 25°C TVJ = 125°C IF = 50 A; diF/dt = -400 A/µs; TVJ = 125°C VR = 600 V; VGE = 0 V (per diode)
Characteristic Values min. typ. max. 2.2 1.6 40 200 2.6 1.8 V V A ns 0.61 K/W
IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 1.5 V; R0 = 20.7 mW Free Wheeling Diode (typ. at TJ = 125°C) V0 = 1.3 V; R0 = 11.3 mW Thermal Response
Temperature Sensor NTC (MWI ... A7T version only) Symbol R25 B25/50 Module Symbol T VJ Tstg VISOL Md Symbol Rpin-chip dS dA RthCH Weight Creepage distance on surface Strike distance in air with heatsink compound 6 6 0.02 180 IISOL £ 1 mA; 50/60 Hz Mounting torque (M5) Conditions Conditions Maximum Ratings -40...+150 -40...+125 2500 2.7 - 3.3 °C °C V~ Nm Conditions T = 25°C Characteristic Values min. typ. max. 4.75 5.0 3375 5.25 k W K
IGBT (typ.) Cth1 = 0.22 J/K; Rth1 = 0.26 K/W Cth2 = 1.74 J/K; Rth2 = 0.09 K/W Free Wheeling Diode (typ.) Cth1 = 0.16 J/K; Rth1 = 0.483 K/W Cth2 = 1.37 J/K; Rth2 = 0.127 K/W Dimensions in mm (1 mm = 0.0394")
Characteristic Values min. typ. max. 5 mW mm mm K/W g
Higher magnification see outlines.pdf
© 2000 IXYS All rights reserved
2-4
MWI 50-12 A7 MWI 50-12 A7T
120 TJ = 25°C A 100
IC 120 A 100 IC 80
11V 11V
VGE=17V 15V 13V
TJ = 125°C
VGE=17V 15V 13V
80 60 40
9V
60 40 20 0 0.0
9V
20 0 0.0
0.5
1.0
1.5
2.0
2.5
VCE
3.0 V
0.5
1.0
1.5
2.0
2.5 3.0 VCE
3.5 V
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
120 A 100
IC
VCE = 20V TJ = 25°C
180
TJ = 125°C
1A 0 5 IF
TJ = 25°C
80 60 40 20 0 5 6 7 8 9 10
VGE
120 90 60 30 0
11 V
0
1
2
VF
3
V
4
Fig. 3 Typ. transfer characteristics
20 V
VGE
Fig. 4 Typ. forward characteristics of free wheeling diode
120
3 00
ns
trr
VCE = 600V IC = 50A
A IRM
15
trr
80 10 40 5
TJ = 125°C VR = 600V IF = 50A
2 00
IRM
1 00
0 0 50 100 150 200
QG
0 250 nC 0 200 400 600
MWI50-12A7
8A0 s 0 /m -di/dt
0
1000
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of free wheeling diode
© 2000 IXYS All rights reserved
3-4