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Details, datasheet, quote on part number:MWI50-12E7
 
 
Part:MWI50-12E7
Category:Discrete => IGBTs (Insulated Gate Bipolar Transistors) => IGBT Modules => 3-phase output (Sixpack configuration)
Description:
Company:IXYS Corporation
Datasheet:Download MWI50-12E7 datasheet   File size : 69 kB
Request For quote:  Find where to buy MWI50-12E7
 



Datasheet text preview:
MWI 50-12 E7 M K I 50-12 E7
IGBT Modules Sixpack, H Bridge
Short Circuit SOA Capability Square RBSOA Preliminary
13 1 2 5 6 9 10 16 15 14 3 4 17 11 12 13 1 2 9 10 16 14
IC25 = 90 A = 1200 V VCES VCE(sat) typ. = 1.9 V
3 4 17
7 8
11 12
MWI
MKI
IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK tSC Ptot TC = 25°C TC = 80°C VGE = ±15 V; RG = 22 ; TVJ = 125°C RBSOA; clamped inductive load; L = 100 µH VCE = 900 V; VGE = ±15 V; RG = 22 ; TVJ = 125°C SCSOA; non-repetitive TC = 25°C Conditions TVJ = 25°C to 150°C Maximum Ratings 1200 ± 20 90 62 100 VCES 10 350 V V A A A µs W
Features · NPT3 IGBTs - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance also in resonant circuits · HiPerFREDTM diode: - fast reverse recovery - low operating forward voltage - low leakage current · Industry Standard Package - solderable pins for PCB mounting - isolated copper base plate
Typical Applications Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 1.9 2.1 4.5 0.8 200 150 60 680 50 6.0 5.0 3.8 500 2.4 6.5 0.8 V V V mA mA nA ns ns ns ns mJ mJ nF nC 0.35 K/W
250
VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC
IC = 50 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 2 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C
· MWI - AC drives - power supplies with power factor correction · MKI - motor control . DC motor amature winding . DC motor excitation winding . synchronous motor excitation winding - supply of transformer primary winding . power supplies . welding . X-ray . battery charger
VCE = 0 V; VGE = ± 20 V
Inductive load, TVJ = 125°C VCE = 600 V; IC = 50 A VGE = ±15 V; RG = 22
VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 50 A (per IGBT)
IXYS reserves the right to change limits, test conditions and dimensions.
© 2002 IXYS All rights reserved
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MWI 50-12 E7 M K I 50-12 E7
Diodes Symbol IF25 IF80 Conditions TC = 25°C TC = 80°C Maximum Ratings 110 70 A A Equivalent Circuits for Simulation
Conduction
Symbol VF IRM t rr RthJC Module Symbol T VJ Tstg VISOL Md Symbol Rpin-chip dS dA RthCH Weight
Conditions IF = 50 A; VGE = 0 V; TVJ = 25°C TVJ = 125°C IF = 50 A; diF/dt = -500 A/µs; TVJ = 125°C VR = 600 V; VGE = 0 V (per diode)
Characteristic Values min. typ. max. 2.2 1.6 40 200 2.6 V V A ns 0.61 K/W
IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 0.95 V; R0 = 24 m Free Wheeling Diode (typ. at TJ = 125°C) V0 = 1.3 V; R0 = 7 m Thermal Response
Conditions
Maximum Ratings -40...+150 -40...+125 °C °C V~ Nm
IGBT (typ.) Cth1 = 0.22 J/K; Rth1 = 0.26 K/W Cth2 = 1.74 J/K; Rth2 = 0.09 K/W Free Wheeling Diode (typ.) Cth1 = 0.16 J/K; Rth1 = 0.483 K/W Cth2 = 1.37 J/K; Rth2 = 0.127 K/W
IISOL 1 mA; 50/60 Hz Mounting torque (M5) Conditions
2500 2.7 - 3.3
Characteristic Values min. typ. max. 5 m mm mm 0.02 180 K/W g
Creepage distance on surface Strike distance in air with heatsink compound
6 6
Dimensions in mm (1 mm = 0.0394")
pins 5, 6, 7, 8 and 15 for MWI only
250
© 2002 IXYS All rights reserved
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