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Details, datasheet, quote on part number:MWI75-06A7
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| Part: | MWI75-06A7 |
| Category: | Discrete => IGBTs (Insulated Gate Bipolar Transistors) => IGBT Modules |
| Description: | Igbt Modules Sixpack Short Circuit Soa Capability Square Rbsoa |
| Company: | IXYS Corporation |
| Datasheet: | Download MWI75-06A7 datasheet File size : 194 kB |
| Request For quote: | Find where to buy MWI75-06A7
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Datasheet text preview:
MWI 75-06 A7 MWI 75-06 A7 T
IGBT Modules Sixpack
Short Circuit SOA Capability Square RBSOA
13
IC25 = 90 A = 600 V VC E S VCE(sat) typ. = 2.1 V
Preliminary Data
Type MWI 75-06 A7 MWI 75-06 A7T NTC - Option without NTC with NTC
1 2
5 6
9 10 16 15 14
T
NTC
3 4 17
7 8
11 12
T
IGBTs Symbol VCES VGES IC25 IC80 RBSOA tSC (SCSOA) Ptot TC = 25°C TC = 80°C VGE = ±15 V; RG = 18 W; TVJ = 125°C Clamped inductive load; L = 100 µH VCE = VCES; VGE = ±15 V; RG = 18 W; TVJ = 125°C non-repetitive TC = 25°C Conditions TVJ = 25°C to 150°C Maximum Ratings 600 ± 20 90 60 ICM = 120 VCEK £ VCES 10 280 V V A A A µs W
Features NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes solderable pins for PCB mounting package with copper base plate
q q q q q q q q q q q
Advantages
q q q
Symbol
Conditions
Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.1 2.5 4.5 0.9 200 50 50 270 40 3.5 2.5 3200 190 2.6 6.5 1.3 V V V mA mA nA ns ns ns ns mJ mJ pF nC 0.44 K/W
space savings reduced protection circuits package designed for wave soldering
Typical Applications
q q
VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC
IC = 75 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 1.5 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V
q
AC motor control AC servo and robot drives power supplies
Inductive load, TVJ = 125°C VCE = 300 V; IC = 75 A VGE = ±15 V; RG = 18 W
VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 300V; VGE = 15 V; IC = 75 A (per IGBT)
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
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023
MWI 75-06 A7 MWI 75-06 A7 T
Diodes Symbol IF25 IF80 Conditions TC = 25°C TC = 80°C Maximum Ratings 140 85 A A Equivalent Circuits for Simulation
Conduction
Symbol VF IRM t rr RthJC
Conditions IF = 50 A; VGE = 0 V; TVJ = 25°C TVJ = 125°C IF = 60 A; diF/dt = -500 A/µs; TVJ = 125°C VR = 300 V; VGE = 0 V (per diode)
Characteristic Values min. typ. max. 1.8 1.3 28 100 2.1 1.5 V V A ns 0.61 K/W
IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 0.95 V; R0 = 20 m Free Wheeling Diode (typ. at TJ = 125°C) V0 = 1.014 V; R0 = 4 m Thermal Response
Temperature Sensor NTC (MWI ... A7T version only) Symbol R25 B25/50 Module Symbol T VJ Tstg VISOL Md Symbol Rpin-chip dS dA RthCH Weight Creepage distance on surface Strike distance in air with heatsink compound 6 6 0.02 180 IISOL 1 mA; 50/60 Hz Mounting torque (M5) Conditions Conditions Maximum Ratings -40...+150 -40...+125 2500 2.7 - 3.3 °C °C V~ Nm Conditions T = 25°C Characteristic Values min. typ. max. 4.75 5.0 3375 5.25 k K
IGBT (typ.) Cth1 = 0.248 J/K; Rth1 = 0.343 K/W Cth2 = 1.849 J/K; Rth2 = 0.097 K/W Free Wheeling Diode (typ.) Cth1 = 0.23 J/K; Rth1 = 0.483 K/W Cth2 = 1.3 J/K; Rth2 = 0.127 K/W
Dimensions in mm (1 mm = 0.0394")
Characteristic Values min. typ. max. 5 m mm mm K/W g
Higher magnification see outlines.pdf
© 2000 IXYS All rights reserved
2-4
MWI 75-06 A7 MWI 75-06 A7 T
200
A 160
VGE= 17V 15V 13V
200 A 160 120
11V VGE= 17V 15V 13V 11V
IC
IC
120 80 40 0 0 1 2 3 4 VCE 5
V
9V TVJ = 25°C
80 40 0
9V TVJ = 125°C
6
0
1
2
3
4 VCE
5V
6
Fig. 1 Typ. output characteristics
Fig. 2 Typ. output characteristics
200
A 160 IC
160 A 120 IF 80
TVJ = 125°C TVJ = 25°C
120 80
TVJ = 125°C TVJ = 25°C
40
VCE = 20V
40
0 4 6 8 10 VGE 12
V
14
0 0.0
0.5
1.0
1.5 VF
2.0 V
2.5
Fig. 3 Typ. transfer characteristics
Fig. 4 Typ. forward characteristics of free wheeling diode
60 50 A
IRM
trr
20
V
150
ns trr
15
VGE
40 30 20
TVJ = 125°C VR = 300V IF = 60A
MWI7506A7
100
10
50
5
VCE = 300V IC = 75A
10
IRM
0 0 40 80 120 160
QG
0 200 nC 240 0 200 400
600 8A0 s 0 /m -di/dt
0
1000
Fig. 5 Typ. turn on gate charge
Fig. 6 Typ. turn off characteristics of free wheeling diode
© 2000 IXYS All rights reserved
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