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Details, datasheet, quote on part number:MWI75-12A8
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| Part: | MWI75-12A8 |
| Category: | Discrete => IGBTs (Insulated Gate Bipolar Transistors) => IGBT Modules |
| Description: | Igbt Modules Sixpack: Short Circuit Soa Capability Square Rbsoa |
| Company: | IXYS Corporation |
| Datasheet: | Download MWI75-12A8 datasheet File size : 80 kB |
| Request For quote: | Find where to buy MWI75-12A8
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Datasheet text preview:
Advanced Technical Information
MWI 75-12 A8
IGBT Modules Sixpack
Short Circuit SOA Capability Square RBSOA
13, 21
I C25 = 125 A = 1200 V VC E S VCE(sat) typ. = 2.2 V
1 2
5 6
9 10 19 17 15
3 4 14, 20
7 8
11 12
IGBTs Symbol VCES VGES IC25 IC80 RBSOA tSC (SCSOA) Ptot TC = 25°C TC = 80°C VGE = ±15 V; RG = 15 ; TVJ = 125°C Clamped inductive load; L = 100 µH VCE = VCES; VGE = ±15 V; RG = 15 ; TVJ = 125°C non-repetitive TC = 25°C Conditions TVJ = 25°C to 150°C Maximum Ratings 1200 ± 20 125 85 ICM = 150 VCEK VCES 10 500 V V A A A µs W
Features
NPT IGBT technology low saturation voltage low switching losses switching frequency up to 30 kHz square RBSOA, no latch up high short circuit capability positive temperature coefficient for easy parallelling MOS input, voltage controlled ultra fast free wheeling diodes solderable pins for PCB mounting package with copper base plate
Advantages
Symbol
Conditions
Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.2 2.5 4.5 3 400 100 50 650 50 12.1 10.5 5.5 350 2.6 6.5 5 V V V mA mA nA ns ns ns ns mJ mJ nF nC 0.25 K/W
space savings reduced protection circuits package designed for wave soldering
Typical Applications
VCE(sat) VGE(th) I CES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC
IC = 75 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 3 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V
AC motor control AC servo and robot drives power supplies
Inductive load, TVJ = 125°C VCE = 600 V; IC = 75 A VGE = ±15 V; RG = 15
VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600V; VGE = 15 V; IC = 75 A (per IGBT)
IXYS reserves the right to change limits, test conditions and dimensions.
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© 2003 IXYS All rights reserved
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MWI 75-12 A8
Diodes Symbol IF25 IF80 Conditions TC = 25°C TC = 80°C Maximum Ratings 150 100 A A
Symbol VF IRM t rr RthJC
Conditions IF = 75 A; VGE = 0 V; TVJ = 25°C TVJ = 125°C IF = 75 A; diF/dt = -500 A/µs; TVJ = 125°C VR = 600 V; VGE = 0 V (per diode)
Characteristic Values min. typ. max. 2.2 1.6 79 220 2.5 V V A ns 0.41 K/W
Module Symbol TVJ TJM Tstg VISOL Md Symbol Rpin-chip dS dA RthCH Weight Creepage distance on surface Strike distance in air with heatsink compound 10 10 0.01 300 Conditions operating Maximum Ratings -40...+125 +150 -40...+125 2500 3-6 °C °C °C V~ Nm
Higher magnification on page B3 - 72
IISOL 1 mA; 50/60 Hz Mounting torque (M5) Conditions
Characteristic Values min. typ. max. 1.8 m mm mm K/W g
© 2003 IXYS All rights reserved
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