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Details, datasheet, quote on part number:VBO22-16NO8
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Datasheet text preview:
VBO 22
Single Phase Rectifier Bridge
IdAVM = 21 A VRRM = 1200-1800 V
V RSM V 1200 1400 1600 1800 Symbol IdAV IdAVM IFSM
VRRM V 1200 1400 1600 1800
Type
+
VBO VBO VBO VBO
22-12NO8 22-14NO8 22-16NO8 22-18NO8
~ ~
Conditions TC = 85°C, module TC = 63°C, module TVJ = 45°C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
Maximum Ratings 17 21 380 440 360 400 725 800 650 650 -40...+150 150 -40...+150 A A A A A A A2s A2s A2s A2s °C °C °C V~ V~ Nm lb.in. g
Features · Package with ¼" fast-on terminals · Isolation voltage 3000 V~ · Planar passivated chips · Blocking voltage up to 1800 V · Low forward voltage drop · UL registered E 72873 Applications · Supplies for DC power equipment · Input rectifiers for PWM inverter · Battery DC power supplies · Field supply for DC motors Advantages · Easy to mount with one screw · Space and weight savings · Improved temperature and power cycling
I2t
TVJ = 45°C VR = 0 TVJ = TVJM VR = 0
TV J TV J M Tstg VISOL Md Weight Symbol IR VF VT0 rT RthJC RthJK dS dA a 50/60 Hz, RMS IISOL 1 mA Mounting torque typ. Conditions TVJ = 25°C; TVJ = TVJM; IF = 150 A; VR = VRRM VR = VRRM TVJ = 25°C t = 1 min t=1s (M5) (10-32 UNF)
2500 3000 2 ±10% 18 ±10% 22
Dimensions in mm (1 mm = 0.0394")
Characteristic Values 0.3 5.0 2.2 0.85 12 8.2 2.05 9.4 2.35 12.7 9.4 50 mA mA V V m K/W K/W K/W K/W mm mm m/s2
For power-loss calculations only per per per per diode; DC current module diode; DC current module
_
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Creeping distance on surface Creepage distance in air Max. allowable acceleration
Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions.
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© 2003 IXYS All rights reserved
VBO 22
IF(OV) -----IFSM
30
typ.
IFSM (A) TVJ=45°C TVJ=150°C 340
10
3
A
1.6 380
2 As
25 20
T=150°C
1.4
TVJ=45°C TVJ=150°C
1.2
15
1
10
0.8
0 VRRM
5
IF T=25 °C VF
| 1
0.6
1/2 VRRM 1 VRRM
0
1
V
| 1.5 . 5 1
0.4
0 10 1 10 t[ms] 2 10 3 10
10
2 1 2 4 t [ms] 6 10
Fig. 1 Forward current versus voltage drop per diode
50 [W]
Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration
50
Fig. 3 i2dt versus time (1-10ms) per diode or thyristor
PSD 25N
0.45 -0.05 = RTHCA [K/W] 0.95
TC 55
60 65 70 75 80 85 90 95 100 105 110 115 120 125 130 135 140 145 °50 C 1
30 [A] DC sin.180° rec.120° rec.60° rec.30°
40
20
30
1.95
20
DC sin.180° rec.120° rec.60° rec.30°
IFAVM
3.95
10
10
PVTOT 0
9.95
IdAV 0 50 100 TC(°C) 150 200
F4
20
0 [A] Tamb
50
100 [K]
150
Fig. 4 Power dissipation versus direct output current and ambient temperature
Fig.5 Maximum forward current at case temperature
10
Z thJK Z thJC
8
K/W
6
4
2
Z th
0.01
0.1
t[s]
1
10
Fig. 6 Transient thermal impedance per diode or thyristor, calculated
IXYS reserves the right to change limits, test conditions and dimensions.
321
© 2003 IXYS All rights reserved
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