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Details, datasheet, quote on part number:VBO30-14NO8
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Datasheet text preview:
VBO 30
Single Phase Rectifier Bridge
IdAVM = 35 A VRRM = 1200-1800 V
VRSM V 1200 1400 1600 1800
VRRM V 1200 1400 1600 1800
Type
+
+ ~ ~
VBO 30-12NO7 VBO 30-14NO7 VBO 30-16NO7 VBO 30-18NO7*
~ ~
* delivery time on request Symbol IdAVM IFSM Conditions TC = 85°C, module TVJ = 45°C; VR = 0 TVJ = TVJM VR = 0 I2t TVJ = 45°C VR = 0 TVJ = TVJM VR = 0 T VJ TVJM Tstg VISOL Md 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine Maximum Ratings 35 400 440 360 400 800 810 650 670 -40...+150 150 -40...+150 2500 3000 1.5 ±15% 13 ±15% 1.5 ±15% 13 ±15% 135 A A A A A A2s A2s As A2s °C °C °C V~ V~ Nm lb.in. Nm lb.in. g
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Features · Package with screw terminals · Isolation voltage 3000 V~ · Planar passivated chips · Blocking voltage up to 1800 V · Low forward voltage drop · UL registered E 72873 Applications · Supplies for DC power equipment · Input rectifiers for PWM inverter · Battery DC power supplies · Field supply for DC motors Advantages · Easy to mount with two screws · Space and weight savings · Improved temperature and power cycling Dimensions in mm (1 mm = 0.0394")
Mounting torque (M4) Terminal connection torque (M4)
Weight Symbol IR VF VT0 rT RthJC RthJK
typ. Conditions VR = VRRM; VR = VRRM; IF = 150 A; TVJ = 25°C TVJ = TVJM TVJ = 25°C
Characteristic Values 0.3 5.0 2.2 0.85 12 2.8 0.7 3.4 0.85 mA mA V V m K/W K/W K/W K/W
For power-loss calculations only TVJ = TVJM per diode; DC current per module per diode; DC current per module
Data according to IEC 60747 refer to a single diode unless otherwise stated.
327
IXYS reserves the right to change limits, test conditions and dimensions.
© 2003 IXYS All rights reserved
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VBO 30
3
2 00 [ A] 1:TVJ= 150°C 2:TVJ= 25°C 1 50
I F(OV) -----I FSM
10
IFSM (A) TVJ=45°C TVJ=150°C 360
2 As
1.6
400
T VJ= 45° C
1.4
TV J=1 50 °C
1.2
1 00
1
0 VRRM
50 IF 0 1.0 1.5 2.0 VF[V] 2.5 3.0 1 2
0.8
1 / 2 V RRM
0.6
1 VRRM
0.4 100 101 t[ms] 102 103
10
2 1 2 4 t [ms ] 6 10
Fig. 1 Forward current versus voltage drop per diode
[W ] 80
Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration
TC
50 55 60 65 70 75 80 85 90 95 100 105
Fig. 3 i2dt versus time (1-10ms) per diode or thyristor
40 [ A] DC s in. 180 ° r ec. 120 ° re c.6 0° re c.3 0°
PSB 35
0.29 0.01 0.57 = RTHCA [K/W]
30
60
1.12
20
40 DC si n .1 8 0 ° re c .1 2 0 ° r e c. 60 ° r e c. 30 ° 10 I F AV M 30 0 [A ]
2.23
110 115 120
20
5.57
125 130 135 140 145
10
P V TO T 0
I dAV 0 50 100 T (°C) C 15 0 200
°C 150 50 Tamb 10 0 [K ] 150
Fig. 4 Power dissipation versus direct output current and ambient temperature
5
K/W
Fig.5 Maximum forward current at case temperature
4
3
Z th J C Z t h JK
2
1
Z th
0.01
0 .1
t [ s]
1
10
Fig. 6 Transient thermal impedance per diode or thyristor, calculated
327
IXYS reserves the right to change limits, test conditions and dimensions.
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© 2003 IXYS All rights reserved
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