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Details, datasheet, quote on part number:VBO36-14NO8
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Datasheet text preview:
VBO 36
Single Phase Rectifier Bridge
IdAVM = 30 A VRRM = 1200-1800 V
VRSM V 1200 1400 1600 1800 Symbol IdAV IdAVM IFSM
VRRM V 1200 1400 1600 1800
Type
+
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VBO 36-12NO8 VBO 36-14NO8 VBO 36-16NO8 VBO 36-18NO8
Conditions TC = 85°C, module TC = 62°C, module TVJ = 45°C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
Maximum Ratings 23 30 550 600 500 550 1520 1520 1250 1250 -40...+150 150 -40...+150 A A A A A A A2s A2s A2s A2s °C °C °C V~ V~ Nm lb.in. g
Features · Package with ¼" fast-on terminals · Isolation voltage 3000 V~ · Planar passivated chips · Blocking voltage up to 1800 V · Low forward voltage drop · UL registered E 72873 Applications · Supplies for DC power equipment · Input rectifiers for PWM inverter · Battery DC power supplies · Field supply for DC motors Advantages · Easy to mount with one screw · Space and weight savings · Improved temperature and power cycling
I2t
TVJ = 45°C VR = 0 TVJ = TVJM VR = 0
T VJ TVJM Tstg VISOL Md Weight Symbol IR VF VT0 rT RthJC RthJK dS dA a 50/60 Hz, RMS IISOL 1 mA Mounting torque typ. Conditions TVJ = 25°C; TVJ = TVJM; IF = 150 A; VR = VRRM VR = VRRM TVJ = 25°C t = 1 min t=1s (M5) (10-32 UNF)
2500 3000 2 ±10% 18 ±10% 22
Dimensions in mm (1 mm = 0.0394")
Characteristic Values 0.3 2.0 1.7 0.8 5.8 6.2 1.55 7.4 1.85 12.7 9.4 50 mA mA V
_
V m K/W K/W K/W K/W mm mm m/s2
327
per diode; DC current per module per diode; DC current per module Creeping distance on surface Creepage distance in air Max. allowable acceleration
Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions.
© 2003 IXYS All rights reserved
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For power-loss calculations only
1-2
VBO 36
4 10 2 As
2 00 [ A] 1:TVJ= 150°C 2:TVJ= 25°C 1 50
IF (O V ) -- -- - IF SM
1.6 1.4 1.2 1
IFSM (A) TVJ=45°C TVJ=150°C 480 500
1 00
10
3 T V J =4 5 ° C T V J =1 50 °C
0 V RR M
50
0.8
1 / 2 VR R M
IF 0
1
0.6
1 V RR M
2
0.4
10
101 t[ms] 102 103
2 1 2 4 t [m s] 6 10
0.5
1 1.5 VF[V]
2
2.5
100
Fig. 1 Forward current versus voltage drop per diode
70 [W] 60 50
1 .43
Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration
TC
0. 36 0 .71 = RTHCA [K/W]
55 60 65 70 75 80 85 50
Fig. 3 i2dt versus time (1-10ms) per diode or thyristor
50 [A] 40 DC sin.180° rec.120° rec.60 ° rec.30 ° 30
PSB 36
40 30 20 10 PV TO T 0 I FA VM DC s i n. 18 0 ° r e c. 12 0 ° r e c.6 0 ° r e c.3 0 ° 20 [A] 0 Tam b
2 .86
90 95 100 105 110 115 120 125 130 135 140 145 °50 C 1
20
7 .14
10 IdAV 0 50 100 TC(°C) 15 0 200
50
100 [K]
150
Fig. 4 Power dissipation versus direct output current and ambient temperature
Fig.5 Maximum forward current at case temperature
8
K/W Z th J K
6
Z t h JC
4
2
Z th
0. 01
0. 1
t[ s ]
1
10
Fig. 6 Transient thermal impedance per diode or thyristor, calculated
IXYS reserves the right to change limits, test conditions and dimensions.
327
2-2
© 2003 IXYS All rights reserved
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