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Details, datasheet, quote on part number:VBO50-14NO7
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Datasheet text preview:
VBO 50
Single Phase Rectifier Bridge
IdAVM = 50 A VRRM = 1200-1800 V
VRSM V 1200 1400 1600 1800
VRRM V 1200 1400 1600 1800
Type
+
+
-
VBO 50-12NO7 VBO 50-14NO7 VBO 50-16NO7 VBO 50-18NO7*
~ ~
~ ~
* delivery time on request
Symbol IdAVM IFSM
Conditions TC = 64°C, module TVJ = 45°C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
Maximum Ratings 50 750 820 670 740 2800 2820 2250 2300 -40...+150 150 -40...+150 A A A A A A2s A2s A2s A2s °C °C °C V~ V~ Nm lb.in. Nm lb.in. g
Features · Package with screw terminals · Isolation voltage 3000 V~ · Planar passivated chips · Blocking voltage up to 1800 V · Low forward voltage drop · UL registered E 72873 Applications · Supplies for DC power equipment · Input rectifiers for PWM inverter · Battery DC power supplies · Field supply for DC motors Advantages · Easy to mount with two screws · Space and weight savings · Improved temperature and power cycling Dimensions in mm (1 mm = 0.0394")
I2t
TVJ = 45°C VR = 0 TVJ = TVJM VR = 0
T VJ TVJM Tstg VISOL Md 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s
2500 3000 5 ±15% 44 ±15% 3 ±15% 26 ±15% 260
Mounting torque (M5) Terminal connection torque (M5)
Weight Symbol IR VF VT0 rT RthJC RthJK
typ. Conditions VR = VRRM; VR = VRRM; IF = 150 A; TVJ = 25°C TVJ = TVJM TVJ = 25°C
Characteristic Values 0.3 10.0 1.6 0.85 8 2.6 0.65 2.84 0.71 mA mA V V m K/W K/W K/W K/W
327
For power-loss calculations only TVJ = TVJM per diode; DC current per module per diode; DC current per module
Data according to IEC 60747 refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions.
© 2003 IXYS All rights reserved
1-2
VBO 50
2 00 [ A] 1:TVJ= 150°C 2:TVJ= 25°C 1 50
1.4 1.2
3 TVJ=45°C
I F(OV) -----I FSM
IFSM (A) TVJ=45°C TVJ=150°C 750 670
4 10 2 As
1.6
1 00
1
0 VRRM
10
TVJ=150°C
50
0.8
1 /2 V RRM
0.6
1 VRRM
IF 0
1 2
0.4
10 2 1 2 4 t [ms] 6 10
0.5
1 1.5 VF[V]
2
2.5
10
0
10
1
t[ms] 10
2
10
3
Fig. 1 Forward current versus voltage drop per diode
100 [W] 80
Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration
85
Fig. 3 i2dt versus time (1-10ms) per diode or thyristor
70 [ A]
PSB 55
0 .6 0 .3 5 0 .8 5 = RTHCA [K/W]
TC
90 95 10 0 10 5
50
DC s in .1 80 ° r ec .1 20 ° re c. 6 0° . 3 0°
60
1 .3 5
11 0 11 5 12 0
40 DC sin.180° rec.120° rec.60° rec.30° 10 IFAVM 30 0 [A]
2 .3 5
30
12 5 13 0
20 PVTOT 0
5 .3 5
13 5 14 0 14 5 15 0
10 IdAV 0 50 10 0 TC(°C) 15 0 2 00
°C
50 Tamb
100 [K]
150
Fig. 4 Power dissipation versus direct output current and ambient temperature
Fig.5 Maximum forward current at case temperature
4
K /W
3
Z t hJ K Z t hJ C
2
1
Zth
0.01
0.1
t [s ]
1
10
Fig. 6 Transient thermal impedance per diode or thyristor, calculated
IXYS reserves the right to change limits, test conditions and dimensions.
327
2-2
© 2003 IXYS All rights reserved
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