|
Details, datasheet, quote on part number:VU052-08N01
| |
Datasheet text preview:
VUO 52
Three Phase Rectifier Bridge
IdAVM = 55 A VRRM = 800-1800 V
VRSM V 900 1300 1500 1700 1900
VRRM V 800 1200 1400 1600 1800
Type
10 8 6
1/2
45 12
VUO 52-08NO1 VUO 52-12NO1 VUO 52-14NO1 VUO 52-16NO1 VUO 52-18NO1
4/5 6
8
10
Symbol IdAV IdAV I dAVM IF S M
Test Conditions TK = 90°C, module TA = 45°C (RthKA = 0.5 K/W), module module TVJ = 45°C; VR = 0 TVJ = TVJM VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
Maximum Ratings 54 43 55 350 375 305 325 615 590 465 445 -40...+130 130 -40...+125 A A A A A A A A2s A2s A2s A2s °C °C °C V~ V~ Nm lb.in. g
Features Package with DCB ceramic base plate Isolation voltage 3600 V~ Planar passivated chips Blocking voltage up to 1800 V Low forward voltage drop Leads suitable for PC board soldering UL registered E72873
q q q q q q q
I2t
TVJ = 45°C VR = 0 TVJ = TVJM VR = 0
Applications Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Field supply for DC motors
q q q q
T VJ TVJM Tstg VISOL Md Weight Symbol IR VF VT0 rT RthJH dS dA a 50/60 Hz, RMS IISOL £ 1 mA Mounting torque typ. Test Conditions VR = VRRM VR = VRRM IF = 55 A; TVJ = 25°C TVJ = TVJM TVJ = 25°C t = 1 min t=1s (M5) (10-32UNF)
q q q
3000 3600 2 - 2.5 18-22 35
Advantages Easy to mount with two screws Space and weight savings Improved temperature and power cycling Dimensions in mm (1 mm = 0.0394")
Characteristic Values £ £ £ 0.3 5 1.46 0.8 12.5 1.5 0.25 12.7 9.4 50 mA mA V V mW K/W K/W mm mm m/s2
For power-loss calculations only per diode, 120° rect. per module, 120° rect. Creeping distance on surface Creepage distance in air Max. allowable acceleration
© 2000 IXYS All rights reserved
1-2
934
Data according to IEC 60747 and refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions.
VUO 52
60 IF A 50 TVJ = 25°C TVJ = 130°C 40 max. 30 typ. 20 100 TVJ = 130°C 10 50 150 TVJ = 130°C 200 300 IFSM A 250 TVJ = 45°C 1000 A2s It
2
50 Hz 0.8 x VRRM
TVJ = 45°C
0 0.0
0.5
1.0
1.5
2.0 V 2.5 VF
0 10-3
100 10-2 10-1 t s 100 1 t ms 10
Fig. 1 Forward current versus voltage drop per diode
200 Ptot W 160
Fig. 2 Surge overload current per diode IFSM: Crest value. t:duration
Fig. 3 I2t versus time (1-10 ms) per diode
60
RthKA K/W 0.5 1 1.5 2 3 4 6
IdAVM A 50
40
120
30 80 20 40
10
0 0 10 20 30 40 50 A 0 IdAVM 25 50 75 100 °C 125 TA 150
0 0 25 50 75 100 125 °C 150 TK
Fig. 4 Power dissipation versus direct output current and ambient temperature
1.6 ZthJK K/W 1.2 ZthJK
Fig. 5 Maximum forward current at heatsink temperature TK
0.8
Constants for ZthJK calculation: i Rth (K/W) 0.005 0.2 0.845 0.45 ti (s) 0.008 0.05 0.06 0.3
0.4
1 2 3 4
VUO 52
0.0 10-3
10-2
10-1
100
101
s t
102
Fig. 6 Transient thermal impedance junction to heatsink per diode
© 2000 IXYS All rights reserved
2-2
|
|
