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Details, datasheet, quote on part number:VUB51-16NO1
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Datasheet text preview:
VUB 51
Three Phase Rectifier Bridge
with IGBT and Fast Recovery Diode for Braking System
Preliminary data VRRM V 1200 1600 VUB 51-12 NO1 VUB 51-16 NO1 Type
VRRM = 1200-1600 V IdAV = 51 A
45
12
67 Symbol VRRM IdAV IdAVM IFSM I2t Test Conditions Maximum Ratings 1200 / 1600 51 70 300 260 450 340 80 1200 ± 20 31 21 62 130 1200 9 14 90 75 60 40 -40...+150 150 -40...+125
Module
9 10
Rectifier Diodes
TH = 110°C, sinusoidal 120° limited by leads TVJ = 45°C, t = 10 ms, VR = 0 V TVJ = 150°C, t = 10 ms, VR = 0 V TVJ = 45°C, t = 10 ms, VR = 0 V TVJ = 150°C, t = 10 ms, VR = 0V TH = 25°C per diode TVJ = 25°C to 150°C Continuous
V A A A A A A W V V A A A W V A A A A A W °C °C °C V~ V~ Nm lb.in. g
Features
q
q q q q
Soldering connections for PCB mounting Isolation voltage 3600 V~ Ultrafast freewheel diode Convenient package outline UL registered E 72873
Ptot VCES VGE
IGBT
Applications
q
Drive Inverters with brake system
IC25 IC80 ICM Ptot
TH = 25°C, DC TH = 80°C, DC tp = Pulse width limited by TVJM
Advantages
q q q q q
TH = 25°C
Fast Recovery Diode
2 functions in one package No external isolation Easy to mount with two screws Suitable for wave soldering High temperature and power cycling capability
VRRM IFAV IFRMS IFRM IFSM
TH = 80°C, rectangular d = 0.5 TH = 80°C, rectangular d = 0.5 TH = 80°C, tP = 10 ms, f = 5 kHz TVJ = 45°C, t = 10 ms TVJ = 150°C, t = 10 ms TH = 25°C
Dimensions in mm (1 mm = 0.0394")
Ptot T VJ TVJM Tstg VISOL Md Weight
50/60 Hz IISOL £ 1 mA Mounting torque typ.
t = 1 min t=1s (M5) (10-32 unf)
3000 3600 2-2.5 18-22 35
Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
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VUB 51
Symbol Test Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 0.1 3 1.16 mA mA V
ReRtifitirier Diodes c ece f Diodes
IR VF VT0 rT RthJH VBR(CES) VGE(th) IGES ICES VCEsat
VR = VRRM, VR = VRRM, IF = 25 A,
TVJ = 25°C TVJ = 150°C TVJ = 25°C
For power-loss calculations only TVJ = 150°C per diode VGS = 0 V, IC = 3 mA IC = 10 mA VGE = ± 20 V TVJ = 25°C, VCE = 0.8 VCES TVJ = 125°C, VCE = 0.8 VCES VGE = 15 V, IC = 25 A 1200 5
0.8 V 12.5 mW 1.5 K/W V V nA mA mA V ms
7.5 500 250 1 3.5 10
(SCSOA)
IC
( R B S O A)
IGBT
tSC
VGE = 15 V, VCE = 0.6 VCES, TVJ = 125°C, RG = 4.7 W, non repetitive VGE = 15 V, VCE = 0.8 VCES, TVJ = 125°C, RG = 4.7 W, Clamped Inductive load, L = 100 mH VCE = 25 V, f = 1 MHz, VGE = 0 V VCE = 600 V, IC = 25 A VGE = 15 V, RG = 4.7 W Inductive load; L = 100 mH TVJ = 125°C 2.9 100 220 1600 3.5 12
50
A
Cies td(on) td(off) tf i Eon Eoff RthJH IR VF VT0 rT IRM t rr RthJH
Module
nF ns ns ns mJ mJ 1 K/W
VR VR
Fast Recovery Diode
= VRRM, TVJ = 25°C = 800 V, TVJ =150°C = 12 A, TVJ = 25°C
0.2 6 2.7
mA mA V
IF
For power-loss calculations only TVJ = 150°C IF VR IF VR = 25 A, -diF/dt = 100 A/ms = 100 V TJ = 100°C = 1 A, = 30 V -diF/dt = 100 A/ms TJ = 100°C 6.5
1.65 V 46 mW 7 A
50
70
ns
3.12 K/W Creep distance on surface Strike distance in air Maximum allowable acceleration 12.7 mm 9.4 mm 50 m/s2
dS dA a
© 2000 IXYS All rights reserved
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749
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