|
Details, datasheet, quote on part number:VUB60-12NO1
| |
Datasheet text preview:
VUB 60
Three Phase Rectifier Bridge
with IGBT and Fast Recovery Diode for Braking System
VRRM V 1200 1600 VUB 60-12 NO1 VUB 60-16 NO1 Type
VRRM = 1200-1600 V IdAVM = 70 A
45
12
67 Symbol VRRM IdAV IdAVM IFSM I2t Test Conditions Maximum Ratings 1200 / 1600 59 70 530 475 1400 1130 49 1200 ± 20 31 23 21 62 70 1200 8 12 90 75 60 22 -40...+150 150 -40...+125
Module
9 10
Rectifier Diodes
TH = 110°C, sinusoidal 120° limited by leads TVJ = 45°C, t = 10 ms, VR = 0 V TVJ = 150°C, t = 10 ms, VR = 0 V TVJ = 45°C, t = 10 ms, VR = 0 V TVJ = 150°C, t = 10 ms, VR = 0V TH = 80°C per diode TVJ = 25°C to 150°C Continuous TH = 25°C, DC TH = 70°C, DC TH = 80°C, DC tp = Pulse width limited by TVJM
V A A A A A A W
Features
q
q q q q q
Soldering connections for PCB mounting Isolation voltage 3600 V~ Ultrafast freewheel diode Convenient package outline UL registered E 72873 Thermistor
Ptot VCES VGE IC25 IC70 IC80 ICM Ptot
Fast Recovery Diode IGBT
Applications V V A A A A W V A A A A A W °C °C °C V~ V~ Nm lb.in. g
q
Drive Inverters with brake system
Advantages
q q q q
TH = 80°C TH = 80°C, rectangular d = 0.5 TH = 80°C, rectangular d = 0.5 TH = 80°C, tP = 10 µs, f = 5 kHz TVJ = 45°C, t = 10 ms TVJ = 150°C, t = 10 ms TH = 80°C
q
VRRM IFAV IFRMS IFRM IFSM
2 functions in one package No external isolation Easy to mount with two screws Suitable for wave soldering High temperature and power cycling capability
Dimensions in mm (1 mm = 0.0394")
Ptot T VJ TVJM Tstg VISOL Md Weight
50/60 Hz IISOL £ 1 mA Mounting torque typ.
t = 1 min t=1s (M5) (10-32 unf)
3000 3600 2-2.5 18-22 35
Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
1-4
VUB 60
Symbol Test Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 0.1 3 1.3 mA mA V
IF 80
A
70 typ. 60 TVJ= 25°C 50 40 max. 30 20 10 0 0.0 TVJ=150°C
ReRtifitirier Diodes c ece f Diodes
IR VF VT0 rT RthJH VBR(CES) VGE(th) IGES ICES VCEsat
VR = VRRM, VR = VRRM, IF = 25 A,
TVJ = 25°C TVJ = 150°C TVJ = 25°C
For power-loss calculations only TVJ = 150°C per diode VGS = 0 V, IC = 3 mA IC = 10 mA VGE = ± 20 V TVJ = 25°C, VCE = 800 V TVJ = 125°C, VCE = 800 V VGE = 15 V, IC = 25 A 1200 5
0.85 V 8.5 mW 1.42 K/W V V nA mA mA V ms
IFSM
7.5 500 250 1 3.5 10
0.5
1.0 VF
1.5 V
2.0
Fig. 1 Forward current versus voltage drop per rectifier diode
500
A
400
VR= 0.8VRRM
(SCSOA)
IGBT
tSC RBSOA
VGE = 15 V, VCE = 600 V, TVJ = 125°C, RG = 4.7 W, non repetitive VGE = 15 V, VCE = 800 V, TVJ = 125°C, RG = 4.7 W, Clamped Inductive load, L = 100 mH VCE = 25 V, f = 1 MHz, VGE = 0 V VCE = 600 V, IC = 25 A VGE = 15 V, RG = 4.7 W Inductive load; L = 100 mH TVJ = 125°C 2.85 100 220 1600 3.5 12
300
50
A
200
TVJ= 45°C
Cies td(on) td(off) tf i Eon Eoff RthJH IR VF VT0 rT IRM t rr RthJH
Module NTC
nF ns ns ns mJ mJ 1 K/W
100 TVJ= 150°C
0 0.001
0.01 t
0.1
s
1
Fig. 2 Surge overload current per rectifier diode
10000 VR= 0 V
VR VR
Fast Recovery Diode
= VRRM, TVJ = 25°C = 800 V, TVJ =150°C = 12 A, TVJ = 25°C
0.2 6 2.7
mA mA V
IF
A2s
For power-loss calculations only TVJ = 150°C IF VR IF VR = 25 A, -diF/dt = 100 A/ms = 100 V = 1 A, = 30 V -diF/dt = 100 A/ms 6.5
1.65 V 46 mW 7 A
I2t
1000 TVJ= 45°C TVJ= 150°C 100
50
70
ns
3.12 K/W Siemens Typ S 891/2,2k/+9 Creep distance on surface Strike distance in air Maximum allowable acceleration 2.2 kW
10 1 t ms 10
R25 dS dA a
12.7 mm 9.4 mm 50 m/s2
Fig. 3 I2t versus time per rectifier diode
© 2000 IXYS All rights reserved
2-4
VUB 60
140 W 120 100 Ptot 80 60 40 20 0 0 10 20 30 Id(AV)M 40 50 60 A 0 70 40 TA 80 120 °C 160 80
A
70 RthHA [K/W] 0.5 1 1.5 2 3 4 6 60 Id(AV)M 50 40 30 20 10 0 0 40 80
T TH
120 °C 160
H
Fig. 4 Power dissipation versus direct output current and ambient temperature (Rectifier bridge)
Fig. 5 Maximum forward current versus heatsink temperature (Rectifier bridge)
2.0 T =125°C Eoff VJ RG = 4.7W t
fi
100 A 80 IC 60
TVJ = 25°C
VGE = 15V
1.4 VCE(sat) 1.3 1.2 norm. 1.1 1.0
IC = 50A
1.5 Eoff norm. IC = 25A 1.0
VGE = 13V
40 VGE = 11V 20 VGE = 9V 0 0 2 4 6 8 VCE 10 12 V 14
tfi
0.9 0.8 0.7 VGE = 15V 0.6 -50 -25 0 25 50 75 100 125 °C 0 15 TVJ 0.0 0 10 20 30 IC 40 A 50 IC = 12.5A 0.5
Fig. 6 Output characteristics for braking (IGBT)
70 A 60 50
D=0.3
Fig. 7 Saturation voltage versus junction temperature normalized (IGBT)
Fig. 8 Turn-off energy per pulse and fall time versus collector current, normalized (IGBT)
1.3 T =125°C Eoff VJ IC = 25A tfi norm. to 4.7W 1.2 norm. 1.1 tfi 1.0 Eoff
D=0.1 D=0.2
IC
40 30 20 10
D=0.4 D=0.5 D=0.7
TH = 80°C
0 0.0001
0.9
0.001
0.01
0.1
1
tp
s
10
0
20
40 RG
60
80
W 100
Fig. 9 Collector current versus pulse width and duty cycle (IGBT)
Fig.10 Turn-off energy per pulse and fall time versus RG (IGBT)
© 2000 IXYS All rights reserved
3-4
|
|
