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Details, datasheet, quote on part number:VUB71
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| Part: | VUB71 |
| Category: | Power Management => AC-DC Controllers/Converters => Bridge Rectifiers |
| Description: | Three Phase Rectifier Bridge With Igbt And Fast Recovery Diode For Braking System |
| Company: | IXYS Corporation |
| Datasheet: | Download VUB71 datasheet File size : 72 kB |
| Request For quote: | Find where to buy VUB71
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Datasheet text preview:
VUB 71
Three Phase Rectifier Bridge
with IGBT and Fast Recovery Diode for Braking System
VRRM V 1200 1600 VUB 71-12 NO1 VUB 71-16 NO1 Type
VRRM = 1200-1600 V IdAVM = 70 A
45
12
67 Symbol VRRM IdAV IdAVM IFSM I2t Test Conditions Maximum Ratings 1200 / 1600 59 70 530 475 1400 1130 90 1200 ± 20 43 29 90 160 1200 9 14 90 75 60 40 -40...+150 150 -40...+125
Module
9 10
Rectifier Diodes
TH = 110°C, sinusoidal 120° limited by leads TVJ = 45°C, t = 10 ms, VR = 0 V TVJ = 150°C, t = 10 ms, VR = 0 V TVJ = 45°C, t = 10 ms, VR = 0 V TVJ = 150°C, t = 10 ms, VR = 0V TH = 25°C per diode TVJ = 25°C to 150°C Continuous
V A A A A A A W
Features
q
q q q q q
Soldering connections for PCB mounting Isolation voltage 3600 V~ Ultrafast freewheeling diode Convenient package outline UL registered E 72873 Thermistor
Ptot VCES VGE
IGBT
Applications V V A A A W V A A A A A W °C °C °C V~ V~ Nm lb.in. g
749
q
Drive Inverters with brake system
IC25 IC80 ICM Ptot
TH = 25°C, DC TH = 80°C, DC tp = Pulse width limited by TVJM
Advantages
q q q q
TH = 80°C
Fast Recovery Diode
q
VRRM IFAV IFRMS IFRM IFSM
2 functions in one package No external isolation neccessary Easy to mount with two screws Suitable for wave soldering High temperature and power cycling capability
TH = 80°C, rectangular d = 0.5 TH = 80°C, rectangular d = 0.5 TH = 80°C, tP = 10 ms, f = 5 kHz TVJ = 45°C, t = 10 ms TVJ = 150°C, t = 10 ms TH = 25°C
Dimensions in mm (1 mm = 0.0394")
Ptot T VJ TVJM Tstg VISOL Md Weight
50/60 Hz IISOL £ 1 mA Mounting torque typ.
t = 1 min t=1s (M5) (10-32 unf)
3000 3600 2-2.5 18-22 35
Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
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VUB 71
Symbol Test Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 0.1 3 1.3 mA mA V
ReRtifitirier Diodes c ece f Diodes
IR VF VT0 rT RthJH VBR(CES) VGE(th) IGES ICES VCEsat
VR = VRRM, VR = VRRM, IF = 25 A,
TVJ = 25°C TVJ = 150°C TVJ = 25°C
For power-loss calculations only TVJ = 150°C per diode VGS = 0 V, IC = 3 mA IC = 10 mA VGE = ± 20 V TVJ = 25°C, VCE = VCES TVJ = 125°C, VCE = 0.8 VCES VGE = 15 V, IC = 25 A 1200 5
0.85 V 8.5 mW 1.42 K/W V V nA mA mA V ms
8 500 700 1.5 2.9 10
(SCSOA)
RBSOA
IGBT
tSC
VGE = 15 V, VCE = 600 V, TVJ = 125°C, RG = 22 W, non repetitive VGE = 15 V, VCE = 800 V, TVJ = 125°C, RG = 22 W, Clamped Inductive load, L = 100 mH VCE = 25 V, f = 1 MHz, VGE = 0 V VCE = 600 V, IC = 25 A VGE = 15 V, RG = 22 W Inductive load; L = 100 mH TVJ = 125°C 4.5 300 350 1600 6 8
50
A
Cies td(on) td(off) tf i Eon Eoff RthJH IR VF VT0 rT IRM t rr RthJH
Module NTC
nF ns ns ns mJ mJ 0.8 K/W
VR VR
Fast Recovery Diode
= VRRM, TVJ = 25°C = 800 V, TVJ =150°C = 12 A, TVJ = 25°C
4
0.2 6 2.7
mA mA V
IF
For power-loss calculations only TVJ = 150°C IF VR IF VR = 25 A, -diF/dt = 100 A/ms = 100 V = 1 A, = 30 V -diF/dt = 100 A/ms 6.5
1.65 V 46 mW 7 A
50
70
ns
3.12 K/W Siemens Typ S 891/2,2k/+9 Creep distance on surface Strike distance in air Maximum allowable acceleration 2,2 kW
R25 dS dA a
12.7 mm 9.4 mm 50 m/s2
749
© 2000 IXYS All rights reserved
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