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Details, datasheet, quote on part number:VUB72-16NO1
 
 
Part:VUB72-16NO1
Category:Discrete => Bridges => Three Phase => with Dynamic Brake IGBT & Fred Diode
Description:
Company:IXYS Corporation
Datasheet:Download VUB72-16NO1 datasheet   File size : 103 kB
Request For quote:  Find where to buy VUB72-16NO1
 



Datasheet text preview:
VUB 72
Three Phase Rectifier Bridge
with Brake Chopper
VRRM = 1200/1600 V IdAVM = 110 A
12 45
D1
D3
D5
NTC
D
T D2 D4 D6
67 Features Maximum Ratings 1200 1600 40 110 530 100 V V A A A W
9 10
Input Rectifier D1 - D6 Symbol VRRM IFAV IDAVM IF S M Ptot Symbol Conditions VUB 72 -12 NO1 VUB 72 -16 NO1 TC = 80°C; sine 180° TC = 80°C; rectangular; d = 1/3; bridge TVJ = 25°C; t = 10 ms; sine 50 Hz TC = 25°C Conditions
· three phase mains rectifier · brake chopper: - IGBT with low saturation voltage - HiPerFREDTM free wheeling diode · module package: - high level of integration - solder terminals for PCB mounting - UL registered E72873 - isolated DCB ceramic base plate - large creepage and strike distances - high reliability Applications drives with · mains input · DC link · inverter or chopper feeding the machine · motor and generator/brake operation
Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. TVJ = 25°C TVJ = 125°C 1.0 0.9 0.4 1.1 0.02 V V mA mA
VF IR R thJC RthJH
IF = 25 A;
VR = VRRM; TVJ = 25°C VR = 0.8 · VRRM; TVJ = 125°C per diode with heat transfer paste
1.2 K/W 1.42 K/W
Chopper Diode D Symbol VRRM IF25 IF80 Symbol VF IR IRM t rr RthJC RthJH Conditions TVJ = 25°C to 150°C DC; TC = 25°C DC; TC = 80°C Conditions IF = 25 A; TVJ = 25°C TVJ = 125°C VR = VRRM; TVJ = 25°C TVJ = 125°C Maximum Ratings 1200 25 15 V A A
Characteristic Values min. typ. max. 2.7 2.0 0.1 16 130 3.1 0.1 V V mA mA A ns 2.3 K/W 3.12 K/W
IF = 15A; diF/dt = -400 A/µs; TVJ = 125°C VR = 600 V with heat transfer paste
IXYS reserves the right to change limits, test conditions and dimensions.
© 2003 IXYS All rights reserved
1-4
326
VUB 72
Chopper Transistor T Symbol V CES V GES IC25 IC80 ICM VCEK tSC (SCSOA) DC; TC = 25°C DC; TC = 80°C VGE = ±15 V; RG = 39 ; TVJ = 125°C RBSOA; L = 100 µH VGE = ±15 V; VCE = 900 V; TVJ = 125°C RG = 39 ; non repetitive Conditions TVJ = 25°C to 150°C Maximum Ratings 1200 ± 20 50 35 50 V CES 10 µs V V A A A
Equivalent Circuits for Simulation
Conduction
D1 - D6 Diode (typ. at TJ = 125°C) V0 = 0.85 V; R0 = 7 m T/D IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 1.0 V; R0 = 45 m Free Wheeling Diode (typ. at TJ = 125°C) V0 = 1.25 V; R0 = 32 m
Symbol Conditions (TVJ = 25°C, unless otherwise specified) VCE(sat) VGE(th) I CES IG E S td(on) tr td(off) tf Eon Eoff C ies QGon RthJC RthJH IC = 25 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 1 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V
Characteristic Values min. typ. max. 1.9 2.1 4.5 0.1 200 80 50 440 50 3.8 2.0 2.0 250 2.4 6.5 0.1 V V V mA mA nA ns ns ns ns mJ mJ nF nC 0.6 K/W 1.2 K/W
Dimensions in mm (1 mm = 0.0394")
Inductive load, TVJ = 125°C VCE = 600 V; IC = 25 A VGE = ±15 V; RG = 39 VCE = 25 V; VGE = 0 V; f = 1 MHz VCE= 600 V; VGE = 15 V; IC = 25 A
with heat transfer paste, see mounting instructions
Temperature Sensor NTC Symbol R25 B25/100 Module Symbol IR M S TV J Tstg VISOL Md Symbol dA, dS Weight © 2003 IXYS All rights reserved IISOL 1 mA; 50/60 Hz; t = 1 min Mounting torque (M5) Conditions Conditions per pin Maximum Ratings 100 -40...+150 -40...+125 3600 2 - 2.5 A °C °C V~ Nm Conditions T = 25°C R(T) = R25 · e B25/100 Characteristic Values typ.
(1 T
1 298K
)
2.2 100
k K
Characteristic Values min. typ. max. 5 35 mm
326
g
2-4
VUB 72
Input Rectifier D1-D6
80 500
A
70 typ. 60 IF 50 40 max. 30 20 10 0 0.0 TVJ= 25°C TVJ=150°C IFSM
A
400
VR= 0.8VRRM
300 TVJ= 45°C 200
100 TVJ= 150°C 0.5 1.0 VF 1.5 V 2.0 0 0.001 0.01 t 0.1 s 1
Fig. 1 Forward current versus voltage drop per rectifier diode
80
Fig. 2 Surge overload current per rectifier diode
10000 VR= 0 V
A
70
A2s
60 Id(AV)M 50 I2t 40 30 20 10 0 0 40 80 10 100 1000 TVJ= 45°C TVJ= 150°C
TH
120 °C 160
1 t
ms
10
Fig. 3 Maximum forward current versus heatsink temperature (Rectifier bridge)
140 W 120 100 Ptot 80 60 40 20 0 0 10 20 30 Id(AV)M 40 50 60 A 0 70 40 TA 80 120 °C 160
Fig. 4 I2t versus time per rectifier diode
RthHA [K/W] 0.5 1 1.5 2 3 4 6
Note: transient thermal impedance see next page
© 2003 IXYS All rights reserved
3-4
326
Fig. 5
Power dissipation versus direct output current and ambient temperature (Rectifier bridge)