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Details, datasheet, quote on part number:VUI30-12N1
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Datasheet text preview:
Advanced Technical Information
VUI 30-12 N1
Rectifier Module for Three Phase Power Factor Correction
Typical Rectified Mains Power
Pn = 15 kW
at Vn = 400 V 3~; fT = 15 kHz; TC = 80°C
Transistor T Symbol V CES V GES IC25 IC80 ICM VCEK tSC (SCSOA) TC = 25°C TC = 80°C VGE = ±15 V; RG = 22 ; TVJ = 125°C RBSOA; L = 100 µH VCE = VCES; VGE = ±15 V; RG = 22 ; TVJ = 125°C non-repetitive Conditions TVJ = 25°C to 150°C Maximum Ratings 1200 ± 20 95 65 100 V CES 10 V V A A A µs Features · NPT IGBT with low saturation voltage · fast recovery epitaxial diodes (FRED) · module package:
high level of integration solder terminals for PCB mounting isolated DCB ceramic base plate large creepage and strike distances
Applications Three phase rectifier with power factor correction, set up as follows: · input from three phase mains
- wide range of input voltage - mains currents approximately sinusoidal in phase with mains voltage - topology permits to control overcurrent such as in case of input voltage peaks
Symbol
Conditions
Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 1.7 1.9 4.5 1.8 400 100 70 500 70 3.0 2.2 3.3 240 0.6 2.0 6.5 1.6 V V V mA mA nA ns ns ns ns mJ mJ nF nC 0.3 K/W K/W
· output
- direct current link - buck type converter - reduced output voltage - possibility to supply boost converter, inverter etc.
VCE(sat) VGE(th) I CES IG E S td(on) tr td(off) tf Eon Eoff C ies QGon RthJC RthJH
IC = 20 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 2 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 600 V; IC = 20 A VGE = ±15 V; RG = 22
· required components
- one power semiconductor module per phase - one inductor and one capacitor per phase on mains side - output inductor, depending on supplied circuit
VCE = 25 V; VGE = 0 V; f = 1 MHz VCE= 600 V; VGE = 15 V; IC = 50 A with heatsink transfer paste
IXYS reserves the right to change limits, test conditions and dimensions. © 2001 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627
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IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670
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Advanced Technical Information
VUI 30-12 N1
Diodes D1 - D4 Symbol V RRM IF25 IF80 Symbol VF IR IRM t rr RthJC RthJH Module Symbol TV J Tstg VISOL Md Symbol IISOL 1 mA; 50/60 Hz; t = 1 min Mounting torque (M5) Conditions Conditions Maximum Ratings -40...+150 -40...+125 3600 2 - 2.5 °C °C V~ Nm Conditions TVJ = 25°C to 150°C TC = 25°C TC = 80°C Conditions IF = 20 A; TVJ = 25°C TVJ = 125°C VR = VRRM; TVJ = 25°C VR = 0.8VRRM; TVJ = 125°C IF = 30A; diF/dt = -250 A/µs; TVJ = 125°C VR = 540 V with heat transfer paste Maximum Ratings 1200 40 25 V A A
Characteristic Values min. typ. max. 2.2 1.9 2 16 400 2.6 2.4 0.75 V V mA mA A ns 1.3 K/W K/W
Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 5 35 mm g
dA, dS Weight Dimensions in mm (1 mm = 0.0394")
© 2001 IXYS All rights reserved IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627
2-2
IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: (408) 982-0700, Fax: 408-496-0670
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