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Details, datasheet, quote on part number: KHB1D0N60D
 
 
Part numberKHB1D0N60D
CategoryDiscrete => Transistors => FETs (Field Effect Transistors) => MESFET
DescriptionHigh Voltage MOSFETs
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast
and switching mode power supplies.
CompanyKEC semiconductor
DatasheetDownload KHB1D0N60D datasheet
 


 
Specifications, Features, Applications

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies.

FEATURES

CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Ta=25 Derate above 25

Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-toAmbient

* : Drain current limited by maximum junction temperature.
TEST CONDITION MIN. TYP. MAX. UNIT

Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance BVDSS BVDSS/ Tj IDSS Vth IGSS RDS(ON) ID=250 A, Referenced VDS=600V, VGS=0V, VDS=VGS, ID=250 A VGS= V nA

Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Capacitance Reverse Transfer Capacitance Output Capacitance Source-Drain Diode Ratings Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS ISP VSD trr Qrr VGS

Note 1) Repetivity rating : Pulse width limited by junction temperature. Note 25 , Starting Tj=25. Note IS 1.0A, dI/dt 300A/ , VDD 300 BVDSS, Starting Tj=25 , Duty Cycle 2%. Note 4) Pulse Test : Pulse width






Related products with the same datasheet
KHB1D0N60D   KHB1D0N60I   KHB1D0N60I  


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