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Details, datasheet, quote on part number:W32P3C
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Datasheet text preview:
PHOTOTRANSISTOR
W32P3C
Features
!M E C H A N I C A L LY
Description
AND SPECTRALLY MATCHED TO P 3 Made with NPN silicon phototransistor chips.
THE W34 SERIES INFRARED EMITTING LED LAMP.
!WAT E R
CLEAR LENS.
Package Dimensions
Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless otherwise noted. 3. Lead spacing is measured where the lead emerge package. 4. Specifications are subject to change without notice.
SPEC NO: DSAD2240 A P P R O V E D : J. Lu
R E V NO: V.1 C H E C K E D : Allen Liu
D A T E : APR/18/2003 DRAWN: K.ZHANG
PAGE: 1 OF 2
Electrical / Optical Characteristics at T)=25°C
Sy m b o l Par am et er Min . Ty p . Max . Un it Tes t Co n d ic t io n I C=100uA, Ee=0mW/cm2 I E=100uA, Ee=0mW/cm2 I C=2mA, Ee=20mW/cm2 VCE=10V, Ee=0mW/cm2 V CE=5V, I C=1mA, R L=1000 VCE=5V, Ee=1mW/cm2, =940nm
V BR C EO V BR EC O V CE (SAT) I C EO TR TF
Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Collector-to-Emitter Saturation Voltage Collector Dark Current Rise Time (10% to 90%) Fall Time (90% to 10%)
30 5 -
3 3
0.8 100 -
V V V nA us us
I (ON)
On State Collector Current
0.1
0.5
-
mA
Absolute Maximum Ratings at T)=25°C
Par am et er Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Power Dissipation at (or below) 25°C Free Air Temperature Operating Temperature Range Storage Temperature Range Lead soldering Temperature (>5mm for 5sec) Max im u m Rat in g 30V 5V 100mW -40°C ~ +85°C -40°C ~ +85°C 260°C
SPEC NO: DSAD2240 A P P R O V E D : J. Lu
R E V NO: V.1 C H E C K E D : Allen Liu
D A T E : APR/18/2003 DRAWN: K.ZHANG
PAGE: 2 OF 2
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