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Details, datasheet, quote on part number:3N163
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| Part: | 3N163 |
| Category: | Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => P-Channel |
| Description: | P-channel Enchancement Mode MOSFET |
| Company: | Linear Integrated Systems |
| Datasheet: | Download 3N163 datasheet File size : 15 kB |
| Request For quote: | Find where to buy 3N163
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Datasheet text preview:
3N163, 3N164
P-CHANNEL ENHANCEMENT MODE
Linear Integrated Systems
MOSFET
FEATURES
VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS (NOTE 1) @ 25°C (unless otherwise noted) Drain-Source or Drain-Gate Voltage 3N163 3N164 Transient G-S Voltage (NOTE 1) Drain Current Storage Temperature Power Dissipation
D
S
G
2 1 3 4
Case
D
S
-40V -30V ±125V 50mA -65°C to +200°C 375mW
G
Case
18 X 30 MILS
TO-72 Bottom View
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS 3N163 3N164 MIN MAX MIN MAX Gate Forward Current -10 -10 pA IGSSF TA=+125°C -25 -40 -40 -2.0 -2.0 -3.0 -5.0 -5.0 -6.5 200 400 250 -5.0 2000 -30 4000 250 2.5 0.7 3.0 -3.0 1000 -30 -30 -2.0 -2.0 -3.0 -5.0 -5.0 -6.5 400 800 300 -30 4000 250 2.5 0.7 3.0 -25 BVDSS BVSDS VGS(th) VGS(th) VGS IDSS ISDS rDS(on) ID(on) gfs gos Ciss Crss Coss Drain-Source Breakdown Voltage Source-Drain Breakdown Voltage Threshold Voltage Threshold Voltage Gate Source Voltage Zero Gate Voltage Drain Current Source Drain Current Drain-Source on Resistance On Drain Current Forward Transconductance Output Admittance Input Capacitance-Output Shorted Reverse Transfer Capacitance Output Capacitance Input Shorted
UNITS
CONDITIONS VDS=0 (3N163) VDS=0 (3N164) VGS=0 ID=-10µA VGD=0 VBD=0
VGS=-40V
ID=-10µA V IS=-10µA
VGS=-30V
VDS=VGS VDS=-15V VDS=-15V pA ohms mA µs pF VDS=-15V VDS=15V VGS=-20V VDS=-15V VDS=-15V VDS=-15V (NOTE 2)
ID=-10µA ID=-0.5mA VGS=0 ID=-100µA VGS=-10V ID=-10mA ID=-10mA f=1kHz f=1MHz VGS=VDB=0
Linear Integrated Systems
4042 Clipper Ct., Fremont, CA 94538 TEL: (510) 490-9160 · FAX: (510) 353-0261
SWITCHING CHARACTERISTICS TA=25°C and VBS=0 unless otherwise noted) SYMBOL ton tr t off CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Time 3N163 MIN MAX 12 24 50 3N164 MIN MAX 12 24 50 UNITS ns CONDITIONS VDD=-15V ID(on)=-10mA (NOTE 2) RG=RL=1.4K
TYPICAL SWITCHING WAVEFORM VDD 10% 10% R1 R2 50 INPUT PULSE Rise Time 2ns Pulse Width 200ns Switching Times Test Circuit VOUT t on tr
90% 10%
t off
10%
SAMPLING SCOPE Tr 0.2ns CIN 2pF RIN10M
Switching Times Test Circuit
NOTES:
1. Devices must not be tested at ±125V more than once, nor for longer than 300ms. 2. For design reference only, not 100% tested.
Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Linear Integrated Systems
4042 Clipper Ct., Fremont, CA 94538 TEL: (510) 490-9160 · FAX: (510) 353-0261
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