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Part: IT132
Category:
Discrete
-> Transistors
-> Bipolar
-> Bipolar Array
-> General Purpose
Description: Monolithic Dual PNP Transistor
Company: Linear Integrated Systems
Datasheet: Download IT132 datasheet File size : 1264 kB
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Datasheet text preview:
IT130A IT130 IT131 IT132
Linear Integrated Systems
MONOLITHIC DUAL PNP TRANSISTORS
FEATURES Direct Replacement for Intersil IT130 Series Pin for Pin Compatible
C1 ABSOLUTE MAXIMUM RATINGS NOTE 1 (TA= 25°C unless otherwise noted) IC Collector Current 10mA C2 E1 3 5 E2
B1 2
6 B2
Maximum Temperatures Storage Temperature Range Operating Junction Temperature Maximum Power Dissipation Device Dissipation @ Free Air Linear Derating Factor
-65°C to +200°C +150°C ONE SIDE 250mW 2.3mW/°C BOTH SIDES 500mW 4.3mW/°C
1 C1 B1 E1 E2 B2
7 C2
26 X 29 MILS
BOTTOM VIEW
ELECTRICAL CHARACTERISTICS TA= 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS BVCBO Collector to Base Voltage BVCEO BVEBO BVCCO hFE Collector to Emitter Voltage Emitter-Base Breakdown Voltage Collector to Collector Voltage DC Current Gain IT130A 45 45 6.2 60 200 225 VCE(SAT) Collector Saturation Voltage IEBO ICBO COBO CC1C2 IC1C2 fT NF Emitter Cutoff Current Collector Cutoff Current Output Capacitance Collector to Collector Capacitance Collector to Collector Leakage Current Current Gain Bandwidth Product Narrow Band Noise Figure 0.5 1 1 2 4 10 110 3 IT130 45 45 6.2 60 200 225 0.5 1 1 2 4 10 110 3 IT131 45 45 6.2 60 80 100 0.5 1 1 2 4 10 90 3 IT132 UNITS CONDITIONS 45 MIN. V IC = 10µA IE = 0 45 6.2 60 80 100 0.5 1 1 2 4 10 90 3 MIN. MIN. MIN. MIN. MIN. MAX. MAX. MAX. MAX. MAX. MAX. MIN. MAX. V nA nA pF pF nA MHz dB V V V IC = 10µA IE = 10µA IC = 10µA IC = 10µA IB = 0 IC = 0 IE = 0 VCE = 5V NOTE 2
IC = 1.0mA VCE = 5V IC = 0.5mA IB = 0.05mA IC = 0 IE = 0 IE = 0 VCC = 0 VCC= ±60V IC = 1mA VCE = 5V VEB = 3V VCB = 45V VCB = 5V
IC = 100µA VCE = 5V BW = 200Hz, RG = 10 K f=1KHz
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 · TEL: (510) 490-9160 · FAX: (510) 353-0261
MATCHING CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS IT130A IT130 |VBE1-VBE2| Base Emitter Voltage Differential 1 2 |(VBE1-VBE2)|/T Base Emitter Voltage Differential Change with Temperature |IB1- IB2| Base Current Differential 2.5 5 3 5
IT131 3 10 25
IT132 5 20 25
UNITS CONDITIONS MAX. mV IC = 10 µA VCE = 5V MAX. µV/°C MAX. nA IC = 10 µA T = -55°C IC = 10 µA VCE = 5V to +125°C VCE = 5V
TO-71
Six Lead
0.195 DIA. 0.175 0.030 MAX. 0.230 DIA. 0.209 0.150 0.115
TO-78
0.305 0.335 0.335 0.370 MAX. 0.040 0.165 0.185 MIN. 0.500 SEATING PLANE 0.200 0.100
2 34 1 5 8 76
P-DIP
0.320 (8.13) 0.290 (7.37) 0.405 (10.29) MAX. C1 B1 E1 N/C 1 2 3 4 8 C2 7 B2 6 E2 5 N/C
0.016 0.019 DIM. A 0.016 0.021 DIM. B 0.029 0.045
6 LEADS
0.019 DIA. 0.016 0.100
0.500 MIN.
0.050
234 1 8 5 6 7
SOIC
0.150 (3.81) 0.158 (4.01)
0.100
45° 0.046 0.036
45° 0.048 0.028 0.028 0.034
0.188 (4.78) 0.197 (5.00)
C1 B1 E1 N/C
1 2 3 4
8 7 6 5
C2 B2 E2 N/C
0.228 (5.79) 0.244 (6.20)
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired. 2. The reverse base-to-emitter voltage must never exceed 6.2 volts; the reverse base-to-emitter current must never exceed 10 µA.
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 · TEL: (510) 490-9160 · FAX: (510) 353-0261
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