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Part: LS5911-5912C
Category:
Discrete
-> Transistors
-> FETs (Field Effect Transistors)
-> PHEMTs
Description:
Company: Linear Integrated Systems
Datasheet: Download LS5911-5912C datasheet File size : 69 kB
Request For quote: Find where to buy LS5911-5912C
Datasheet text preview:
LS5911 LS5912 LS5912C
Linear Integrated Systems
FEATURES
HIGH TRANSCONDUCTANCE THROUGH 100MHz LOW INPUT CAPACITANCE
WIDEBAND HIGH GAIN MONOLITHIC DUAL N-CHANNEL JFET
gfs>4000µmho CISS=5pf max.
SECOND SOURCE ALTERNATIVE TO INTERSIL, NATIONAL, SILICONIX DIRECT PLUG IN REPLACEMENT
ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature
D1 -65° to +150°C +150°C G1 S1
G1
3
5
S2
2 D1 1 S1 7 G2
6
D2
Maximum Voltage and Current for Each Transistor NOTE 1 Gate Voltage to Drain or Source 35V -VGSS -VDSO -IG(f) Drain to Source Voltage Gate Forward Current 30V 50mA 24 X 27 MILS 500mW @ +125°C S2 D2 G2
Maximum Power Dissipation Device Dissipation @ Free Air - Total
BOTTOM VIEW
ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS LS5911 LS5912 LS5912C 20 40 40 MAX. |VGS1-VGS2| /T Drift vs. Temperature |VGS1-VGS2 | SYMBOL BVGSS gfs gfs |gfs1/gfs2| IDSS |IDSS1/IDSS2| VGS(off) or VP VGS -IG -IG |IG1-IG2| -IGSS -IGSS Offset Voltage 10 MIN. 25 4000 4000 0.95 15 MAX. -10,000 10,000 1 40 UNITS V µmho µmho % MAX.
UNITS µV/°C mV
CONDITIONS VDG= 10V VDG= 10V
ID= 5mA ID= 5mA
TA= -55°C to +125°C
CHARACTERISTICS Gate-Source Breakdown Voltage TRANSCONDUCTANCE Common-Source Forward Common-Source Forward Transconductance Ratio DRAIN CURRENT Saturation Drain Current Saturation Drain Current Ratio GATE VOLTAGE Pinchoff Voltage Gate-Source Voltage GATE CURRENT Operating High Temperature Differential Gate Current At Full Conduction High Temperature
CONDITIONS IG= -1µA VDS= 0 VDG= 10V f= 100MHz f=1kHz NOTE 2 ID= 5mA f= 1kHz
7 0.95 1 0.3 ------
40 1 5 4 50 50 20 50 200
mA % V V pA nA nA pA nA
VDS= 10V NOTE 2 VDS= 10V VDG= 10V VDG= 10V VDG= 10V VDG= 15V TA= +125°C
VGS= 0 V
ID= 1nA ID= 5mA ID= 5mA ID= 5mA VDS= 0 TA= +125°C
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 · TEL: (510) 490-9160 · FAX: (510) 353-0261
SYMBOL GOS GOS NF en CISS CRSS
CHARACTERISTICS MIN. OUTPUT CONDUCTANCE Common-Source Output Conductance -Common-Source Output Conductance NOISE Figure Voltage CAPACITANCE Input Reverse Transfer ------
TYP. -------
MAX. 100 150 1 20 5 1.2
UNITS µmho µmho dB nV/Hz pF pF
CONDITIONS VDG= 10V f= 100MHz VDG= 10V f= 10kHz VDG= 10V VDG= 10V ID= 5mA ID= 5mA ID= 5mA RG= 100k f= 10KHz f= 1MHz ID= 5mA f= 1kHz
TO-71
Six Lead
0.195 DIA. 0.175 0.030 MAX. 0.230 DIA. 0.209 0.150 0.115
TO-78
0.305 0.335 0.335 0.370 MAX. 0.040 0.165 0.185 MIN. 0.500 SEATING PLANE 0.200 0.100
2 34 1 5 8 76
P-DIP
S1 D1 SS G1 1 2 3 4 8 7 6 5 G2 SS D2 S2
0.016 0.019 DIM. A 0.016 0.021 DIM. B 0.029 0.045
A
6 LEADS
0.019 DIA. 0.016 0.100
0.500 MIN.
0.320 (8.13) 0.290 (7.37) 0.405 (10.29) MAX S1 D1 G1 N/C 1 2 3 4 8 7 6 5 N/C G2 D2 S2
0.050
234 1 8 5 6 7
0.100 45°
45° 0.046 0.036
B
0.048 0.028
0.028 0.034
SOIC
S1 1 D1 2 SS 3 G1 4
0.150 (3.81) 0.158 (4.01) 0.188 (4.78) 0.197 (5.00) S1 1 D1 2 G1 3 N/C 4 8 7 6 5 N/C G2 D2 S2
A
8 7 6 5
G2 SS D2 S2
B
0.228 (5.79) 0.244 (6.20)
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired. 2. Assumes smaller value in numerator.
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 · TEL: (510) 490-9160 · FAX: (510) 353-0261
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