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Part: LSIT120A-122
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
-> NPN
Description:
Company: Linear Integrated Systems
Datasheet: Download LSIT120A-122 datasheet File size : 549 kB
Request For quote: Find where to buy LSIT120A-122
Datasheet text preview:
IT120A IT120 IT121 IT122
Linear Integrated Systems
MONOLITHIC DUAL NPN TRANSISTORS
FEATURES Direct Replacement for Intersil IT120 Series Pin for Pin Compatible
ABSOLUTE MAXIMUM RATINGS NOTE 1 (TA= 25°C unless otherwise noted) IC Collector Current 10mA C1 C2 E1 3 5 E2
B1 2
6 B2
Maximum Temperatures Storage Temperature Range Operating Temperature Range Maximum Power Dissipation Device Dissipation @ Free Air Linear Derating Factor
-65°C to +200°C -55°C to +150°C ONE SIDE 250mW 2.3mW/°C BOTH SIDES 500mW 4.3mW/°C
1 C1 B1 E1 E2 B2
7 C2
26 X 29 MILS
BOTTOM VIEW
ELECTRICAL CHARACTERISTICS TA=25°C (unless otherwise noted) SYMBOL CHARACTERISTICS IT120A IT120 IT121 BVCBO Collector to Base Voltage 45 45 45 BVCEO BVEBO BVCCO hFE Collector to Emitter Voltage Emitter-Base Breakdown Voltage Collector to Collector Voltage DC Current Gain 45 6.2 60 200 225 VCE(SAT) Collector Saturation Voltage IEBO ICBO COBO CC1C2 IC1C2 fT NF Emitter Cutoff Current Collector Cutoff Current Output Capacitance Collector to Collector Capacitance Collector to Collector Leakage Current Current Gain Bandwidth Product Narrow Band Noise Figure 0.5 1 1 2 2 10 220 3 45 6.2 60 200 225 0.5 1 1 2 2 10 220 3 45 6.2 60 80 100 0.5 1 1 2 2 10 180 3
IT122 45 MIN. 45 6.2 60 80 100 0.5 1 1 2 2 10 180 3 MIN. MIN. MIN. MIN. MIN. MAX. MAX. MAX. MAX. MAX. MAX. MIN. MAX.
UNITS CONDITIONS V IC = 10µA IE = 0 V V V IC = 10µA IE = 10µA IC = 10µA IC = 10µA V nA nA pF pF nA MHz dB IB = 0 IC = 0 IE = 0 VCE = 5V NOTE 2
IC = 1.0mA VCE = 5V IC = 0.5mA IB = 0.05mA IC = 0 IE = 0 IE = 0 VCC = 0 VCC= ±60V IC = 1mA VCE = 5V VEB = 3V VCB = 45V VCB = 5V
IC = 100µA VCE = 5V BW = 200Hz, RG = 10 K f=1KHz
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 · TEL: (510) 490-9160 · FAX: (510) 353-0261
MATCHING CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS IT120A IT120 |VBE1-VBE2| Base Emitter Voltage Differential Change with Temperature |IB1- IB2| Base Current Differential 2.5 5 1 3 2 5 |(VBE1-VBE2)|/T Base Emitter Voltage Differential
IT121 3 10 25
IT122 5 20 25
UNITS CONDITIONS MAX. mV MAX. µV/°C MAX. nA IC = 10 µA IC = 10 µA T = -55°C IC = 10 µA VCE = 5V VCE = 5V to +125°C VCE = 5V
TO-71
Six Lead
0.195 DIA. 0.175 0.030 MAX. 0.230 DIA. 0.209 0.150 0.115
TO-78
0.305 0.335 0.335 0.370 MAX. 0.040 0.165 0.185 MIN. 0.500 SEATING PLANE 0.200 0.100
2 34 1 5 8 76
P-DIP
0.320 (8.13) 0.290 (7.37) 0.405 (10.29) MAX. C1 B1 E1 N/C 1 2 3 4 8 C2 7 B2 6 E2 5 N/C
0.016 0.019 DIM. A 0.016 0.021 DIM. B 0.029 0.045
6 LEADS
0.019 DIA. 0.016 0.100
0.500 MIN.
0.050
234 1 8 5 6 7
SOIC
0.150 (3.81) 0.158 (4.01)
0.100
45° 0.046 0.036
45° 0.048 0.028 0.028 0.034
0.188 (4.78) 0.197 (5.00)
C1 B1 E1 N/C
1 2 3 4
8 7 6 5
C2 B2 E2 N/C
0.228 (5.79) 0.244 (6.20)
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor may be impaired. 2. The reverse base-to-emitter voltage must never exceed 6.2 volts; the reverse base-to-emitter current must never exceed 10 µA.
Linear Integrated Systems
4042 Clipper Court, Fremont, CA 94538 · TEL: (510) 490-9160 · FAX: (510) 353-0261
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