|Category||RF & Microwaves => Switches|
|Description||SP4T Pin Diode Switch|
|Datasheet||Download MA4SW410 datasheet
Ultra Broad Bandwidth : 50 MHz to 26 GHz 0.9 Insertion Loss 34 dB Isolation at 20 GHz 50 ns Switching Speed Reliable, Fully Monolithic, Glass Encapsulated ConstructionDescription
The a SP4T Series-Shunt Broad Band Switch made with M/A-COM's Unique HMICTM (Heterolithic Microwave Integrated Circuit) Process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form Series and Shunt diodes or vias by imbedding them in a low loss, low dispersion glass. This hybrid combination of Silicon and Glass gives HMIC Switches exceptional low loss and remarkable high isolation through low millimeter-wave frequencies.Applications
These High Performance Switches are suitable for use in Multi-Band ECM, Radar, and Instrumentation Control Circuits where High Isolation to Insertion Loss Ratios are Required. With a Standard V/-5 V, TTL Controlled PIN Diode Driver, 50 nS Switching Speeds are Achieved.
Parameter Operating Temperature Storage Temperature RF C.W. Incident Power (+/-20 mA) Bias Current Forward Applied Voltage (Reverse) Value + 30 dBm mA 25 Volts1. Exceeding any of these values may result in permanent damage
SP4T PIN Diode Switch Electrical Specifications + 25 °C, 20 mA Bias Current (On-Wafer Measurements)
Insertion Loss Isolation Input Return Loss Output Return Loss Switching Speed1
1. Typical Switching Speed is measured from % of Detected RF Voltage driven by a TTL compatible driver. Driver Output Parallel RC Network uses a Capacitor between 560 pF and a Resistor between 220 Ohms to achieve 50 nS Rise and Fall Times.
2 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information.
n North America: Tel. 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. 300 020The following precautions should be observed for successful assembly of the die.
An 80/20 Gold-Tin eutectic solder preform is recommended with a work surface temperature 255 oC and a tool tip temperature of 265 oC. When hot gas is applied, the tool tip temperature should be 290 oC. The chip should not be exposed to temperatures greater than 320 oC for more than 20 seconds. No more than three seconds should be required for the attachment.
These chips should be handled in a clean environment. Do not attempt to clean die after installation.
The MA4SW Series PIN switches are ESD, Class 1 sensitive. The proper ESD handling procedures should be used.
Assembly should be preheated to 125-150 oC. A Controlled thickness of 2 mils is recommended for best electrical and thermal conductivity. A thin epoxy fillet should be visible around the perimeter of the chip after placement. Cure epoxy per manufacturer's schedule.
Thermosonic wedge wire bonding using x 3 mil sq. ribbon or Ball Bonding using 1 mil diameter gold wire is recommended. A stage temperature 150 oC and a force to 22 grams should be used. Ultrasonic energy should be adjusted to the minimum required. RF bonds should be as short as possible.
These chips have Ti-Pt-Au back metal. They can be die mounted with a gold-tin eutectic solder preform or conductive Ag epoxy. Mounting surface must be clean and flat.
3 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information.
n North America: Tel. 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. 300 020
|Some Part number from the same manufacture M/A-COM, Inc.|
|MA4SW410B-1 SP4T Pin Diode Switch With Integrated Bias Network|
|MA4SW424B-1 24 GHZ SP4T Reflective Pin Diode Switch With Integrated Bias|
|MA4SW510 SP5T Reflective Series-shunt Pin Diode Switch|
|MA4SW510B-1 SP5T Series-shunt Reflective Pin Diode Switch With Integrated Bias Network|
|MA4SW610B-1 SP6T Series-shunt Reflective Pin Diode Switch With Integrated Bias Network|
|MAALGM0002-DIE 8.0 - 12.0 GHZ Low Noise Amplifier|
|MAALGM0003-DIE 5.0 - 8.0 GHZ Low Noise Amplifer|
|MAALGM0004-DIE 11.0 - 16.0 GHZ Low Noise Amplifer|
|MAALSS0012 Miniature Broadband Gain Stage 200 -3000 MHZ|
|MAALSS0013 Satellite Radio Lna, 2.2 - 2.4 GHZ|
|MAAM02350 0.2-0.3 Ghz, Wide Band GAAS Mmic Amplifier|
|MAAM02350-A2 0.2 0.3 GHZ Wide Band GAAS Mmic Amplifier|
|MAAM12000 1.2-1.75 Ghz, Low Noise GAAS Mmic Amplifier|
|MAAM12000-A1 1.2-1.75 GHZ Low Noise GAAS Mmic Amplifier|
|MAAM12021 1.5-1.6 Ghz, Low Noise Amplifier|
|MAAM12031 Low Noise Amplifier, 1.7 - 2.0 GHZ|
|MAAM12032 1.7-2 Ghz, Low Noise Amplifier|
|MAAM26100 2-6.5 Ghz, Power GAAS Mmic Amplifier|
|MAAM26100-B1 2-6 Ghz, Power GAAS Mmic Amplifier|
2087-6001-13 : Point Contact Detector 10 MHz to 18 GHz
EMRSJ-2LH : 5 MHz - 1000 MHz RF/MICROWAVE DOUBLE BALANCED MIXER, 9.5 dB CONVERSION LOSS-MAX Specifications: RF: 5 to 1000 MHz ; Conversion Loss: 9.5 dB ; Mixer Type: Double Balanced ; Operating Temperature: -55 to 100 C (-67 to 212 F)
MA44612D91 : 20 GHz, SILICON, STEP RECOVERY DIODE Specifications: Configuration: Single ; Diode Applications: FREQUENCY MULTIPLIER ; Number of Diodes: 1 ; VBR: 15 volts ; CT: 0.5000 to 0.7000 pF
MA46451-94A : VHF-KA BAND, 0.7 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE Specifications: Diode Type: VARIABLE CAPACITANCE DIODE
MA46610-92 : L-KA BAND, 0.54 pF, 45 V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE Specifications: Diode Type: VARIABLE CAPACITANCE DIODE
MA4PH238-1079 : SILICON, PIN DIODE Specifications: Number of Diodes: 1 ; PD: 1000 milliwatts
ML2606-08-IRL : 12000 MHz - 18000 MHz RF/MICROWAVE DOUBLE BALANCED MIXER, 10.5 dB CONVERSION LOSS-MAX Specifications: RF: 12000 to 18000 MHz ; Conversion Loss: 10.5 dB ; Mixer Type: Double Balanced ; Operating Temperature: -55 to 85 C (-67 to 185 F)
ML6714-121 : 2000 MHz - 6000 MHz RF/MICROWAVE LIMITER Specifications: Limiter Type: Pin Diode Limiter ; Frequency Band: 2000.0 to 6000.0 MHz ; VSWR: 1.60 1
ML6763-200D : 500 MHz - 2000 MHz RF/MICROWAVE LIMITER Specifications: Limiter Type: Pin Diode Limiter ; Frequency Band: 500.0 to 2000.0 MHz ; VSWR: 1.40 1
MLA2658-402B1 : 11700 MHz - 12800 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER Specifications: Amplifier Type: Power Amplifier ; Applications: RF Microwave ; Frequency Range: 11700 to 12800 MHz ; Input VSWR: 1.8 1 ; Output VSWR: 1.8 1 ; Operating Temperature: -55 to 95 C (-67 to 203 F)
PD60-0011-05S : 800 MHz - 960 MHz RF/MICROWAVE COMBINER, 0.1 dB INSERTION LOSS Specifications: Frequency: 800.00 to 960.00 MHz ; Insertion Loss: 0.10 dB ; Operating Temperature: -40 to 60 C (-40 to 140 F)
1307032 : Quickmount Micro GPS Patch Antennas. QuickMount Micro GPS Patch Antennas with mounting options Model ANPC-128 - Passive Model ANPC-131 - Active Model ANPC-135 - Active Our QuickMount Micro GPS Patch Antennas are compact, right hand circularly polarized units ideal for applications where small size and versatile mounting is a must. The active ANPC-131 QuickMount combines all the of our passive.
AG402-86 : . 6000 MHz +17 dBm at 900 MHz +32.5 dBm at 900 MHz 15 dB Gain at 900 MHz Single Voltage Supply SOT-86 SMT Package Internally matched to 50 The is a general-purpose buffer amplifier that offers high dynamic range in a low-cost surface-mount package. At 900 MHz, the AG402-86 typically provides dB of gain, +32.5 dBm Output IP3, and +17 dBm P1dB. The device.
AM038D1-00 : 33 43 GHZ GAAS Mmic Double Balanced. 3343 GHz GaAs MMIC Double Balanced Down Converter Mixer Alpha's double balanced GaAs Schottky diode mixer has a typical conversion loss an LO power level as low as 9 dBm over the band 3343 GHz. The chip uses Alpha's proven Schottky diode technology, and is based upon MBE layers for the highest uniformity and repeatability. The diodes employ surface.
BX6512 : Frequency (MHz) = 5 - 500 ;; Gain (Typ/Min) (dB) = 21 / 19 ;; Noise Figure (Typ/Max) (dB) = 2.5 / 3.5 ;; P1dB Comp Point (Typ/Min) (dBm) = +10 / +8 ;; 3rd Order Intercept (Typ) (dBm) = +21 ;; 2nd Order Intercept (Typ) (dBm) = +27 ;; DC Power (Typ) (V/mA) = +15 / +23 ;; Package = Package = Package = 4 Pin TO-8 Package = Surface Mount Package = Flatpack.
BX7286 : Frequency (MHz) = 10 - 200 ;; Gain (Typ/Min) (dB) = 28 / 26 ;; Noise Figure (Typ/Max) (dB) = 2.5 / 3.5 ;; P1dB Comp Point (Typ/Min) (dBm) = +8 / +7 ;; 3rd Order Intercept (Typ) (dBm) = +20 ;; 2nd Order Intercept (Typ) (dBm) = +28 ;; DC Power (Typ) (V/mA) = +5 / +21 ;; Package = Package = Package = 4 Pin TO-8 Package = Surface Mount Package = Flatpack.
DR1200-DK : Frequency = Manual ;; = Development Kit. Virtual Wire® Development Kit Hardware Warranty Special Notices 1 Virtual Wire® Development Kit Introduction Purpose of the Virtual Wire® Development Kit Intended User General Key Development Kit Contents 2 Low-Power Wireless Data Communications Operational Considerations Regulations Example Applications FAQs 3 Developing a Virtual Wire® Application.
FR12-0001 : Single Junction Drop-in ISOlator. 24 dB Isolation Typical, 0.25 dB Insertion Loss Typical n Custom Products Available with Alternate Configura- tions such as Couplers, Attenuators, Higher Power Terminations, Reverse Circulation and Termination on Ports 2 n Available as Custom Product Without Flange for Surface Mount Applications (Solder Reflow) n Designed for Wireless Telecommunications.
HN3C13FU : Hybrid Transistors. Vceo (V) = 10 ;; Ic (mA) = 30 ;; PC(mW) = 200 ;; .hFE = 80 to 240 ;; .fT(Typ.) (GHz) = 6 ;; NF (Typ.) (dB) = - ;; Contents = 2SC5106 X 2 ;; Package = US6 ;; Application = VHF to UHF Mixer Osc.
KGL4208 : 10-Gbps GAAS Frequency Divider Ics. Oki Semiconductor's KGL4208, KGL4209, and KGL4210 are 10-Gbps GaAs frequency divider ICs that are designed for ultra high-speed digital communications systems. The KGL4208, KGL4209, and KGL4210 are 1/4, 1/8, and 1/16 frequency dividers ICs respectively. These 10-Gbps frequency divider IC's use 0.2-µm gate length GaAs MESFET and Oki's unique CBFF (Common.
MSC81450M : Avionics Transistors. Avionics Applications RF & Microwave Transistors.
PE4248 : MOSFET Switches. Product = Absorbtive SPST ;; Operating Frequency (MHz) = DC - 1300 ;; P1dB (dBm) = 33 ;; Insertion Loss (dB, 1GHz) = 0.75 ;; ISOlation (dB, 1GHz) = 63 ;; Package Types = 6L MLPM.
UPC3220GR : Catv Out-of-band Tuner(507). LOW DISTORTION: = +1 dBm TYP. WIDE AGC DYNAMIC RANGE: GCRtotal 46 dB TYP. LOW NOISE FIGURE: 7 dB TYP HIGH GAIN: 71 dB TYP ON CHIP VIDEO AMPLIFIER SINGLE SUPPLY VOLTAGE 5 V PACKAGED IN 16-PIN SSOP SUITABLE FOR HIGH-DENSITY SURFACE MOUNTING The µPC3220GR is silicon monolithic IC designed for use as the out-of-band tuner for digital CATV applications.
ADF7020-1 : High Performance, ISM Band, FSK/ASK Transceiver IC The ADF7020-1 is a low power, highly integrated FSK/GFSK/ASK/OOK/GOOK transceiver designed for operation in the low UHF and VHF bands. The ADF7020-1 uses an external VCO inductor which allows you to set the operating frequency anywhere between 135MHz and 650MHz. Typical range of the VCO is about 10% of the operating.
TGA2703-SM : 33 to 47 GHz Wide Band Driver Amplifier TGA2703-SM is a linear amplifier operating for 802.16 broadband wireless applications in 3.3 to 3.8 GHz frequency band. The PA delivers 24 dB of small-signal gain, 30dBm P1dB and 40 dBc IMR3 at 21 dBm output power per tone from a single +6V power supply. It has 2.5% EVM at 22 dBm output power. The TGA2703 incorporates.
RI-RFM-007B-00 : . General 8 Transmitter. 9 Receiver 10 RFM Connectors and Jumpers. 10 Recommended Operating Conditions. 16 Dimensions 19 4.2 4.3 Antenna Requirements. 26 Antenna Resonance Tuning. 27 Tuning Procedure. 27 Regulatory Notes. 5.1.1 5.1.2 FCC Notices (U.S.A). 32 CE Conformity (Europe) 32 Expanding Antenna Tuning Inductance Range. 33 Field Strength Adjustment..
ATAR890 : MARC4 4-Bit Architecture See ATAR090, Additional 512-bit EEPROM (64 Bytes) On-chip, Operating Temperature Range TAMB = -40°C to +85°C.
BFCN-7700+ : LTCC Band Pass Filter 7500 To 7900 MHz LTCC Band Pass Filter 7500 to 7900 MHz.
HMC905LP3E : 6 GHz Low Noise Programmable Divider (N = 1 To 4) SMT The HMC905LP3E is a SiGe BiCMOS low noise programmable frequency divider in a 3x3 mm leadless surface mount package. The circuit can be programmed to divide from N = 1 to N = 4 in the 400 MHz to 6 GHz input frequency range. The high level output power (up to 6 dBm single ended) with a very low SSB phase.