|Category||RF & Microwaves => Switches|
|Description||SP4T Pin Diode Switch With Integrated Bias Network|
|Datasheet||Download MA4SW410B-1 datasheet
Broad Bandwith Specified from to 18 GHz Integrated D.C. Bias Network Exceptional Isolation to Loss Ratio Rugged, Fully Monolithic, Glass Encapsulated ConstructionDescription
The MA4SW410B-1 device a SP4T Series-Shunt Broad Band Switch with an Integrated Bias Network utilizing M/A-COM's HMICTM (Heterolithic Microwave Integrated Circuit) Process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in a low loss, low dispersion glass. This hybrid combination of Silicon and Glass gives HMIC Switches exceptional low loss and remarkable high isolation through Ku Band frequencies.Applications
These High Performance Switches are suitable for use in Multi-Band ECM, Radar, and Instrumentation Control Circuits where High Isolation to Insertion Loss Ratios are Required. With a Standard V/-5 V, TTL Controlled PIN Diode Driver, 80 nS Switching Speeds are Achieved.
Parameter Operating Temperature Storage Temperature RF C.W. Incident Power (+/-20 mA) DC Bias Current Value + 30 dBm +/-40 mA1. Exceeding any of these values may result in permanent damage
SP4T PIN Diode Switch with Integrated Bias Network
Electrical Specifications + 25 °C, 10 mA Bias Current (On-Wafer Measurements)
1. Typical Switching Speed measured from % of detected RF Voltage driven by TTL compatible drivers using RC Output Spiking Network, where R C pF.
Operation of the MA4SW Series of PIN Switches is achieved by the Simultaneous Application of Negative DC Current to the Low Loss Port and Positive DC current to the Remaining Isolated Switching Ports per the Driver Connections Table. The control currents should be supplied by constant current sources. For Insertion Loss, -10 mA bias results in approximately 2 V, and for Isolation 10 mA yields approximately V at the respective bias nodes. The Backside Area of the Die is the RF and DC Return Ground Plane.
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information.
n North America: Tel. 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. 300 020SP4T PIN Diode Switch with Integrated Bias Network Assembly Considerations
The following precautions should be observed for successful assembly of the die.
These chips have TiPtAu back metal. They can be die mounted with a gold-tin eutectic solder preform or electrically conductive epoxy. Mounting surface must be clean and flat.
These chips should be handled in a clean environment. Do not attempt to clean die after installation.
An 80/20 Gold-Tin eutectic solder preform is recommended with a work surface temperature 255 °C and a tool tip temperature of 265 °C. When hot gas is applied, the tool tip temperature should be 290 °C. The chip should not be exposed to temperatures greater than 320 °C for more than 20 seconds. No more than three seconds should be required for the attachment.
The MA4SW410B-1 Series PIN Diode Switch is ESD, Class 1 sensitive. The proper ESD handling procedures should be used.
Thermosonic wedge wire bonding using x 3 mil sq. ribbon or Ball Bonding using 1 mil diameter gold wire is recommended. A stage temperature 150 °C and a force to 22 grams should be used. Ultrasonic energy should be adjusted to the minimum required. RF bonds should be as short as possible.
Assembly should be preheated to 125-150 °C. A Controlled thickness of 2 mils is recommended for best electrical and thermal conductivity. A thin epoxy fillet should be visible around the perimeter of the chip after placement. Cure epoxy per manufacturer's schedule.
3 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information.
n North America: Tel. 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. 300 020
|Some Part number from the same manufacture M/A-COM, Inc.|
|MA4SW424B-1 24 GHZ SP4T Reflective Pin Diode Switch With Integrated Bias|
|MA4SW510 SP5T Reflective Series-shunt Pin Diode Switch|
|MA4SW510B-1 SP5T Series-shunt Reflective Pin Diode Switch With Integrated Bias Network|
|MA4SW610B-1 SP6T Series-shunt Reflective Pin Diode Switch With Integrated Bias Network|
|MAALGM0002-DIE 8.0 - 12.0 GHZ Low Noise Amplifier|
|MAALGM0003-DIE 5.0 - 8.0 GHZ Low Noise Amplifer|
|MAALGM0004-DIE 11.0 - 16.0 GHZ Low Noise Amplifer|
|MAALSS0012 Miniature Broadband Gain Stage 200 -3000 MHZ|
|MAALSS0013 Satellite Radio Lna, 2.2 - 2.4 GHZ|
|MAAM02350 0.2-0.3 Ghz, Wide Band GAAS Mmic Amplifier|
|MAAM02350-A2 0.2 0.3 GHZ Wide Band GAAS Mmic Amplifier|
|MAAM12000 1.2-1.75 Ghz, Low Noise GAAS Mmic Amplifier|
|MAAM12000-A1 1.2-1.75 GHZ Low Noise GAAS Mmic Amplifier|
|MAAM12021 1.5-1.6 Ghz, Low Noise Amplifier|
|MAAM12031 Low Noise Amplifier, 1.7 - 2.0 GHZ|
|MAAM12032 1.7-2 Ghz, Low Noise Amplifier|
|MAAM26100 2-6.5 Ghz, Power GAAS Mmic Amplifier|
|MAAM26100-B1 2-6 Ghz, Power GAAS Mmic Amplifier|
2020-6604-06 : Directional Coupler, Mini, Octave Bandwidth
MAAPSM0015-DIE : GaAs Mmic Amplifier, DC-20 GHZ
AMC-117 : 10 MHz - 200 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER Specifications: Amplifier Type: Power Amplifier ; Applications: RF Microwave ; Frequency Range: 10 to 200 MHz ; Minimum Gain: 7.7 dB ; Input VSWR: 2 1 ; Output VSWR: 2 1 ; Nominal Impedance: 50 ; Operating Temperature: -55 to 85 C (-67 to 185 F)
MA45264A-108 : S BAND, 1.5 pF, 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE Specifications: Diode Type: VARIABLE CAPACITANCE DIODE
MA45294-31 : L-S BAND, 2.2 pF, 90 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE Specifications: Diode Type: VARIABLE CAPACITANCE DIODE
MA86843-MO1 : 24125 MHz RF/MICROWAVE DOUBLE BALANCED MIXER Specifications: Mixer Type: Double Balanced ; Operating Temperature: -30 to 70 C (-22 to 158 F)
MAAM-008200-000A83 : 5000 MHz - 9000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER Specifications: Amplifier Type: Power Amplifier ; Applications: RF Microwave ; Frequency Range: 5000 to 9000 MHz ; Input VSWR: 1.3 1 ; Output VSWR: 1.3 1 ; Package Type: Connectorized, HERMETIC SEALED PACKAGE ; Nominal Impedance: 50
ML4352-96 : 60 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE Specifications: Diode Type: VARIABLE CAPACITANCE DIODE
MLF1100 : BAND PASS FILTER Specifications: Filter Type: Bandpass
2677-1005-11 : 500 MHz - 2000 MHz RF/MICROWAVE SGL POLE SIX THROW SWITCH, 2 dB INSERTION LOSS Specifications: Frequency Range: 500 to 2000 MHz ; Insertion Loss: 2 dB ; VSWR: 1.6 1 ; Impedance: 50 ohms ; Type: SGL POLE SIX THROW SWITCH ; Operating Temperature: -55 to 95 C (-67 to 203 F)
2696-0102-3 : 2000 MHz - 4000 MHz, 0 deg - 180 deg RF/MICROWAVE DIGITALLY CONTROLLED PH SHFTR Specifications: Phase Shifter Type: Digital ; Frequency Range: 2000 to 4000 MHz ; Phase Shift Range: 180-deg, 1 ; Insertion Loss: 1.8 dB ; Input VSWR: 1.6 1
5-28-701-33 : 26500 MHz - 40000 MHz RF/MICROWAVE DOUBLE BALANCED MIXER, 8 dB CONVERSION LOSS-MAX Specifications: RF: 26500 to 40000 MHz ; Conversion Loss: 8 dB ; Mixer Type: Double Balanced ; Operating Temperature: -40 to 85 C (-40 to 185 F)
1SV230 : VR (v) = 30 ;; Ir (nA) = 10 ;; CT(1) (pF) = 13.9 to 16.1 ;; CT(2) (pF) = 1.7 to 2.1 ;; CT(1)/CT(2) = 7.1 ;; .rs(Typ.) Ohms = 0.73 ;; Package = Usc ;; Application = Catv Conv. Osc.
2SC3862 : Bipolar Transistors. Vceo (V) = 15 ;; Ic (mA) = 50 ;; PC (mW) = 150 ;; Cob (pF) = - ;; Cre (pF) = 0.6 ;; .fT(Typ.) (GHz) = 2.4 ;; Package = S-mini ;; Application = UHF Mixer/osc.
855735 : = Filter - STD 70 High-selectivity ;; Frequency (MHz) = 70 ;; Bandwidth (MHz) = 0.25 ;; Insertion Loss (dB) = 20.0 Max ;; Modes of Operation = se ;; Package (mm) = 24.6 X 9.0.
A34 : LNAs. 100 to 2000 MHZ TO-8 Cascadable Amplifier. to 2000 MHz CASCADABLE AMPLIFIER HIGH GAIN - TWO STAGES: 16 dB (TYP.) ULTRALOW PHASE DEVIATION FROM LINEARITY: ; 500-200 MHz LOW VSWR: < 1.5:1 (TYP.) MEDIUM LEVEL OUTPUT: +7 dBm (TYP.) Frequency 30-2100 MHz 0.1-2.0 GHz 16.0 dB Small Signal Gain (min.) 15.0 dB Gain Flatness (max.) 30 dB Reverse Isolation 6.5 dB Noise Figure (max.) 7.0 dBm 6.0 dBm Power.
A81-2 : LNAs. 20 to 500 MHZ TO-8 Cascadable Amplifier. TO 500 MHz CASCADABLE AMPLIFIER HIGH OUTPUT POWER: +15.0 dBm (TYP.) HIGH EFFICIENCY: @ +15 Vdc (TYP.) LOW NOISE 2.9 dB (TYP.) HIGH GAIN: >24.5 dB (TYP.) Characteristics Frequency Small Signal Gain (min.) Gain Flatness (max.) Reverse Isolation Noise Figure (max.) Power Output 1 dB comp. (min.) IP3 IP2 Second Order Harmonic IP VSWR Input / Output (max.).
BX6574 : Frequency (MHz) = 5 - 500 ;; Gain (Typ/Min) (dB) = 30 / 27 ;; Noise Figure (Typ/Max) (dB) = 3.5 / 6 ;; P1dB Comp Point (Typ/Min) (dBm) = +9 / +7 ;; 3rd Order Intercept (Typ) (dBm) = +22 ;; 2nd Order Intercept (Typ) (dBm) = +36 ;; DC Power (Typ) (V/mA) = +15 / +37 ;; Package = Package = Package = 4 Pin TO-8 Package = Surface Mount Package = Flatpack.
CDA0666 : 600-1400MHz Pin Diode Attenuator 7 Section.
CHA5297-99F : Operational Frequency = 37-40GHz ;; Noise Figure = - ;; Gain = 10dB ;; Gain Control Range = - ;; Gain Flatness = 1dB ;; Sat. Output Power = >29dBm ;; P-1dB = 28dBm ;; Bias = 1.6A ;; Case = Die.
DPS52005 : 100-300MHz Phase Shifter 5 Section.
MA4AGSW2 : AlGaAs Relflective SP2T. Ultra Broad Bandwidth: 50 MHz to 50 GHz Functional bandwidth : 50 MHz to 70 GHz 0.7 dB Insertion Loss, 33 dB Isolation at 50 GHz Low Current consumption: -10 mA for Low Loss State +10 mA for Isolation n M/A-COM's unique patent pending AlGaAs hetero-junction anode technology n Silicon Nitride Passivation n Polymide Scratch protection M/A-COM's is an Aluminum-Gallium-Arsenide.
MA4GC6772 : 77 GHZ GAAS Pin Diode Switch For Automotive. 77 Ghz Frequency Response 4.0 dB Insertion Loss 24 dB Isolation 2nS Switching Speed Silicon Nitride Passivation Polyimide Scratch Protection Designed for Automated Pick and Place Insertion Qualified for Automotive Environments M/A-COM's is a Gallium Arsenide Monolithic PIN Diode Switch designed for 77 GHz Automotive Applications. This Monolithic Switch.
MCA-19FLH : Frequency Mixers. Frequency Mixer. high IP3, 25 dBm typ. excellent L-R isolation, 40 dB typ. excellent compression, 1 dB compr, RF>LO power industry standard foot print LTTC design for excellent temperature stability performance repeatability and small size water wash capability double balanced mixer low price Applications .
MD54-0006 : 1400-2100 Mhz, Low Cost Mmic Mixer. +12 dBm Input Power 1 dB Compression High Isolation, to +8 dBm LO Drive Level - 500 MHz dB IF Bandwidth Does not require DC bias Ultra-Miniature SOT-26 Plastic Package M/A-COM's is a passive mixer that achieves the performance of a double balanced diode mixer in an ultra-miniature SOT-25 package. The MD54-0006 is ideally suited for use where high level.
MDS-223 : Surface Mount Double-balanced Mixer, 10 - 500 MHZ. Fully Hermetic Package Low Cost Conversion Loss: 7 dB Typical Midband Impedance: 50 Ohms Nominal Maximum Input Power: 400 mW Max @ 25°C, Derated @ 3.2 mW/°C n IF Port Current: 50 mA Max. n MIL-STD-883 Screening Available Transformers convert the LO and RF paths to balanced lines connecting to a low barrier, Schottky diode ring quad. These transformers.
TGF4124-EPU : HFET/pHEMT. = 24mm HFET ;; Freq(GHz) = DC - 4.0 ;; Gain (dB) = 13@2GHz ;; Power(dBm) = 40 ;; Nf/pae = 51% ;; Vd(V) = 8 ;; IQ(mA) = 2170 ;; Status = Moq.
UPG174TA : L-band pa Driver Amplifier. LOW VOLTAGE OPERATION: VDD 3.3 V LOW CURRENT OPERATION : IDD 37 mA TYP @ VDD 3.3 V, fRF to 1910 MHz, POUT = +8 dBm LOW DISTORTION: = -42 dBc TYP @ VDD 3.3 V, fRF to 1910 MHz, POUT + 8 dBm 6 PIN MINI-MOLD PACKAGE The is an L-Band PA driver amplifier developed for digital cellular telephone and PCS applications. This device high output power and low distortion.
HMC849LP4CE : High Isolation SPDT Non-Reflective Switch SMT, DC - 6 GHz The HMC849LP4CE is a high isolation non-reflective DC to 6 GHz GaAs pHEMT SPDT switch in a low cost leadless surface mount package. The switch is ideal for cellular/WiMAX/4G Infrastructure applications yielding up to 60 dB isolation, low 0.8 dB insertion loss and +52 dBm input IP3. Power handling.