Details, datasheet, quote on part number: MA4SW610B-1
PartMA4SW610B-1
CategoryRF & Microwaves => Switches
Description SP6T Series-shunt Reflective Pin Diode Switch With Integrated Bias Network
CompanyM/A-COM, Inc.
DatasheetDownload MA4SW610B-1 datasheet
Quote
Find where to buy
 
  

 

Features, Applications
SP6T PIN Diode Switch with Integrated Bias Network
Features

Ultra Broad Bandwidth: 2 GHz to 18 GHz 1.9 dB Insertion Loss, 35 dB Isolation at 18 GHz Reliable. Fully Monolithic, Glass Encapsulated Construction

Description

The is a Reflective SP6T Series-Shunt broad band switch with integrated bias networks made with M/A-COM's HMICTM (Heterolithic Microwave Integrated Circuit) process, US Patent 5,268,310. This process allows the incorporation of silicon pedestals that form series and shunt diodes or vias by imbedding them in low loss, low dispersion glass. By using small spacing between elements, this combination of silicon and glass gives HMIC devices low loss and high isolation performance through 18 GHz.

Applications

These high performance switches are suitable for the use in multi-band ECM, Radar, and instrumentation control circuits where high isolation to insertion loss ratios are required. With a standard V/-5 V, TTL controlled PIN diode driver, 80 ns switching speeds are achieved.

Parameter Operating Temperature Storage Temperature RF C.W. Incident Power (+/-20 mA) Bias Current (Forward) Applied Voltage (Reverse) Value + 30 dBm 15 V

1. Exceeding any of these values may result in permanent damage
Electrical Specifications = 25 C, 10 mA Bias Current (On-Wafer Measurements)

1. Typical switching speed is measured from 90% of the detected RF voltage driven by a TTL compatible driver. Driver output parallel RC network uses a capacitor between 560 pF and a resistor between - 220 Ohms to achieve 80 ns rise and fall times.

Note: Typical Switching Speed measured from % of detected RF signal driven by a TTL compatible driver. 2 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information.

SP6T PIN Diode Switch with Integrated Bias Network Microwave Performance

3 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information.


 

Some Part number from the same manufacture M/A-COM, Inc.
MAALGM0002-DIE  8.0 - 12.0 GHZ Low Noise Amplifier
MAALGM0003-DIE  5.0 - 8.0 GHZ Low Noise Amplifer
MAALGM0004-DIE  11.0 - 16.0 GHZ Low Noise Amplifer
MAALSS0012  Miniature Broadband Gain Stage 200 -3000 MHZ
MAALSS0013  Satellite Radio Lna, 2.2 - 2.4 GHZ
MAAM02350 0.2-0.3 Ghz, Wide Band GAAS Mmic Amplifier
MAAM02350-A2 0.2 0.3 GHZ Wide Band GAAS Mmic Amplifier
MAAM12000 1.2-1.75 Ghz, Low Noise GAAS Mmic Amplifier
MAAM12000-A1 1.2-1.75 GHZ Low Noise GAAS Mmic Amplifier
MAAM12021 1.5-1.6 Ghz, Low Noise Amplifier
MAAM12022
MAAM12031  Low Noise Amplifier, 1.7 - 2.0 GHZ
MAAM12032 1.7-2 Ghz, Low Noise Amplifier
MAAM22010
MAAM26100 2-6.5 Ghz, Power GAAS Mmic Amplifier
MAAM26100-B1 2-6 Ghz, Power GAAS Mmic Amplifier
MAAM26100-P1
MAAM28000 2-8 Ghz, Wide Band GAAS Mmic Amplifier
MAAM28000-A1
MAAM37000 3.5-7 Ghz, Low Noise GAAS Mmic Amplifier
MAAM37000-A1
Same catergory

40276 : Power Dividers. = Power Dividers ;; Size LXWXH = 2.8 X 2.4 X 0.36" ;; Packaging = Aluminum Cased ;; Frequency MHZ = 2000-4000 ;; Power Handling Watts = 17.

855991 : = Filter - Wireless Data ;; Frequency (MHz) = 465.0 ;; Bandwidth (MHz) = 16.6 ;; Insertion Loss (dB) = 14.0 Max ;; Modes of Operation = SE, Bal ;; Package (mm) = 5.0 X 5.0.

AA260-85 : Digital Attenuator. GAAS ic 5 Bit Digital Attenuator 1 DB. Attenuation 1.0 dB Steps 31 dB with High Accuracy Low DC Power Consumption Low Cost SSOP-20 Plastic Package The a 5 bit, GaAs IC FET digital attenuator in a low cost SSOP-20 package. This attenuator has an LSB 1 dB and a total attenuation of 31 dB. The AA260-85 is particularly suited where high attenuation accuracy, low insertion loss and low intermodulation.

AT-230 :  Digital Attenuator, 28 DB, 3-Bit. Attenuation 4-dB Steps 28 dB High Accuracy 3% Low DC Power Consumption: 50 W Low Intermodulation Product: +50 dBm IP3 Temperature Range: to +85C Low Cost SOIC14 Plastic Package Tape and Reel Packaging Available1 M/A-COM's 3-bit, 4-dB step GaAs MMIC digital attenuator in a low cost SOIC 14-lead surface mount plastic package. The AT-230 is ideally suited.

BX7210 : Frequency (MHz) = 10 - 200 ;; Gain (Typ/Min) (dB) = 9 / 8 ;; Noise Figure (Typ/Max) (dB) = 1.3 / 2 ;; P1dB Comp Point (Typ/Min) (dBm) = +14 / +12.5 ;; 3rd Order Intercept (Typ) (dBm) = +31 ;; 2nd Order Intercept (Typ) (dBm) = +48 ;; DC Power (Typ) (V/mA) = +15 / +15 ;; Package = Package = Package = 4 Pin TO-8 Package = Surface Mount Package = Flatpack.

F1207 : Power. Pout W = 20 ;; Freq MHZ = 400 ;; Gain DB = 10 ;; Theta JC = 1.75 ;; GM Mho = 0.8 ;; Idsat a = 7.5 ;; Ciss PF = 40 ;; CRSS PF = 6 ;; Coss PF = 30 ;; Die = 1+1 ;; Style = Push - Pull ;; PKG = aq.

INA-10386 : Bipolar. 6V Fixed Gain, Dbs/tvro if Amplifier. Low Noise, Cascadable Silicon Bipolar MMIC Amplifier Technical Data Cascadable 50 Gain Block 3 dB Bandwidth: to 1.8 GHz 26 dB Typical Gain at 1.5 GHz 10 dBm Typical at 1.5 GHz Unconditionally Stable (k>1) Surface Mount Plastic Package feedback amplifier housed in a low cost surface mount plastic package. It is designed for narrow or wide bandwidth.

KF163 : = 100MHz Band Paging System ;; Package = F-11.

LF-412 : Z RATIO: 50 Ohm Unbal/50 Ohm Unbal, DC ISOlated.

MAFRIN0034 : Miniature Surface Mount Dual ISOlators. Replaces industry standard single junction with a dual junction with 25 dB more isolation with only 0.1 dB more insertion loss in the same space Designed for Wireless Telecommunication Systems: UMTS2100 (3G) High performance at low cost in a miniaturized package. Small size, 1" Vs. industry standard of 2" Low mass, less than 18 grams vs. industry standard.

SMV1770-079 : Tuning Varactor. Hyperabrupt Junction Tuning Varactor. Low Series Resistance High Capacitance Ratio Ultra Small Size SC-79 Package Designed for High Volume, Low Cost Battery Applications Available in Tape and Reel Packaging The is a silicon hyperabrupt junction varactor diode specifically designed for battery operation.The specified high capacitance ratio and low RS of this varactor make it appropriate.

TGA8334 : 2 - 20 GHZ Power Amplifier. to 20 GHz Frequency Range 0.4-W Output Power 1 dB Gain Compression at Midband Positive Gain Slope Across Frequency On-Chip Input DC-Blocking Capacitor 1.8:1 Input SWR at Midband, 1.3:1 Output SWR at Midband 8 dB Gain with 1 dB Flatness x 0.006 in.) The TriQuint is a GaAs monolithic dual-gate distributed amplifier. Small-signal gain is typically 8 dB with.

TWP2225 : Frequency Range (MHz) = 1 - 2000 ;; Insertion Loss (Typ) (dB) = 0.6 ;; ISOlation (Typ) (dB) = 35 ;; Switching Speed (Typ) (ns) = 20 ;; P1dB Comp Point (Typ) (dBm) = 20 ;; VSWR (Typ) = 1.1 ;; Termination = Open ;; Driver = TTL.

CXG1178K : Power Amplifier Module for JCDMA The CXG1178K is the power amplifier module which operates at a single power supply. This IC is designed using the Sony's original p-Gate HFET process. Single power supply operation: VDD1 = VDD2 = 3.5V (High mode), 1.5V (Mid mode), 1.0V (Low mode), VGG = 2.8V Ultrasmall package: 0.027cc (4.5mm 4.5mm 1.35mm) High.

HMC891LP5E : Filter - Tunable, Band Pass SMT, 2 - 3.9 GHz The HMC891LP5E is a MMIC band pass filter which a user selectable passband frequency. The 3 dB filter bandwidth is approximately 9%. The 20 dB filter bandwidth is approximately 27%. The center frequency can be varied between 2 and 3.9 GHz by applying an analog tune voltage between 0 and 14V. This tunable.

SKY77354 : Power Amplifier Module For Quad-Band GSM / GPRS / EDGE SKY77354 Power Amplifier Module (PAM) is designed in a compact form factor for quad-band cellular handsets comprising GSM850/900, DCS1800 and PCS1900, supporting fixed gain Gaussian Minimum-Shift Keying (GMSK) and linear Enhanced Data for GSM Evolution (EDGE) modulation. Class 12 General Packet.

 
0-C     D-L     M-R     S-Z