Details, datasheet, quote on part number: MRF150
PartMRF150
CategoryDiscrete => Transistors => Bipolar => RF
Description150 W, N-channel MOS Linear RF Power Fet
CompanyM/A-COM, Inc.
DatasheetDownload MRF150 datasheet
Quote
Find where to buy
 
  

 

Features, Applications

Designed primarily for linear large­signal output stages to 150 MHz frequency range. Specified 50 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain 17 dB (Typ) Efficiency = 45% (Typ) Superior High Order IMD (150 W PEP) 32 dB (Typ) (150 W PEP) 60 dB (Typ) 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR

Rating Drain­Source Voltage Drain­Gate Voltage Gate­Source Voltage Drain Current Continuous Total Device Dissipation = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGO VGS ID PD Tstg TJ Value +150 200 Unit Vdc Adc Watts W/°C °C

Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 0.6 Unit °C/W

NOTE CAUTION MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.

Drain­Source Breakdown Voltage (VGS = 100 mA) Zero Gate Voltage Drain Current (VDS 50 V, VGS = 0) Gate­Body Leakage Current (VGS 20 V, VDS = 0) V(BR)DSS IDSS IGSS 5.0 1.0 Vdc mAdc µAdc

Gate Threshold Voltage (VDS = 100 mA) Drain­Source On­Voltage (VGS 10 A) Forward Transconductance (VDS 5.0 A) VGS(th) VDS(on) gfs Vdc mhos

Input Capacitance (VDS 50 V, VGS = 1.0 MHz) Output Capacitance (VDS 50 V, VGS = 1.0 MHz) Reverse Transfer Capacitance (VDS 50 V, VGS = 1.0 MHz) Ciss Coss Crss 40 pF

Common Source Amplifier Power Gain (VDD 50 V, Pout 150 W (PEP), IDQ = 250 mA) = 30 MHz = 150 MHz Gps dB %

Drain Efficiency (VDD 50 V, Pout 150 W (PEP), 30; 30.001 MHz, ID (Max) 3.75 A) Intermodulation Distortion (1) (VDD 50 V, Pout 150 W (PEP), = 30 MHz, = 30.001 MHz, IDQ = 250 mA) Load Mismatch (VDD 50 V, Pout 150 W (PEP), 30; 30.001 MHz, IDQ = 250 mA, VSWR 30:1 at all Phase Angles)

Intermodulation Distortion (1) and Power Gain (VDD 50 V, Pout 50 W (PEP), = 30 MHz, = 30.001 MHz, IDQ 3.0 A) GPS IMD(d9 dB

NOTE: To MIL­STD­1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone. L1 BIAS C5 R1 DUT T2 RF INPUT C3 RF OUTPUT 50 V

470 pF Dipped Mica 0.1 µF Ceramic Chip or Monolythic with Short Leads 200 pF Unencapsulated Mica or Dipped Mica with Short Leads 15 pF Unencapsulated Mica or Dipped Mica with Short Leads

µF/100 V Electrolytic L1 VK200/4B Ferrite Choke or Equivalent, µH L2 Ferrite Bead(s), /1.0 W Carbon /1.0 W Carbon (or W in Parallel T1 9:1 Broadband Transformer T2 1:9 Broadband Transformer

Figure 3. Output Power versus Input Power
Figure 5. Common Source Unity Gain Frequency versus Drain Current
Figure 6. Gate Voltage versus Drain Current

 

Some Part number from the same manufacture M/A-COM, Inc.
MRF151 150 W, N-channel MOS Broadband RF Power Fet
MRF151G 300 W, 50 V, N-channel Broadband RF Power MOSFET
MRF154 600 W, 50 V, N-channel Broadband RF Power MOSFET
MRF157 600 W, MOS Linear RF Power Fet
MRF158 600 W, 50 V, Tmos Broadband RF Power Fet
MRF160 4 W, 28 V, MOSFET Broadband RF Power Fet
MRF16006 6 W, 1.6 Ghz, RF Power Transistor NPN Silicon
MRF16030 30 W, 1.6 Ghz, RF Power Transistor NPN Silicon
MRF166C 20 W, 500 Mhz, MOSFET Broadband RF Power Fet
MRF166W 40 W, 500 Mhz, Tmos Broadband RF Power Fet
MRF171A 45 W, 150 Mhz, MOSFET Broadband RF Power Fet
MRF173 80 W, 175 Mhz, N-channel Broadband RF Power MOSFET
MRF173CQ
MRF174 125 W, 200 Mhz, N-channel Broadband RF Power MOSFET
MRF175GU 200 W, 500 Mhz, N-channel Broadband RF Power MOSFET
MRF175GU1111 N-channel MOS Broadband RF Power Fets
MRF175GV 200 W, 500 Mhz, N-channel Broadband RF Power MOSFET
MRF175LU 100 W, 28 V,rf Power Field-effect Transistor
MRF175LV N-channel Broadband RF Power Fets
MRF176GU 200 W, 500 Mhz, N-channel Broadband RF Power MOSFET
MRF176GV 150 W, 500 Mhz, N-channel Broadband RF Power MOSFET
Same catergory

AM27S191 : 16,384-bit ( 2048 X 8 ) Bipolar Prom.

ASI10534 : NPN Silicon RF Power Transistor. The ASI 2302 is Designed for General purpose Class C Power Amplifier Applications to 3000 MHz. 9.5 dB min. / 2300 MHz Hermetic Microstrip Package OmnigoldTM Metalization System .

AZ849 : Electromechanical Relays. High dielectric and surge voltage: 2.5 kV surge (per Bellcore 1.5 kV surge (per FCC Part 68), 1,000 VRMS open contacts Low power consumption: 56 mW set Non-latching and latching versions Single coil and dual coil versions Stable contact resistance for low level signal switching Epoxy sealed for automatic wave soldering and cleaning UL E43203; CSA 73363.

CRS03 : Schottky Barrier Diodes (SBDs). VRRM (V) = 30 ;; Vfm(max) (V) = 0.45 ;; If(av) (Amps) = 1.0 ;; Package = S-flat ;; Feature = Low Irrm Type.

FS30KMJ-06F : for General Switching. Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory.

KSC2223 : NPN Epitaxial Silicon Transistor. Very small size to assure good space factor in Hybrid IC applications fT=600MHz (TYP) IC=1mA Cob=1pF (TYP) VCB=6V NF=3dB (TYP) at f=100MHz Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCEO VEBO PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation.

NDB6030L : DMOS/Vertical Enhancement N-Channel. Length/height 4.69 MM Width 10.54 MM Depth 15.49 MM Power Dissipation 75 W Transistor Polarity N Channel Current id Cont. 52 a Voltage VGS TH Max. 3 V (D2-Pak) Voltage VDS Max 30 V.

PDTA115EMB : PNP Resistor-equipped Transistor; R1 = 100 K?, R2 = 100 K? PNP Resistor-Equipped Transistor (RET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. NPN complement: PDTC115EMB..

03028-BX821BKZJ : CAPACITOR, CERAMIC, MULTILAYER, 100 V, BX, 0.00082 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 8.20E-4 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 100 volts ; Mounting Style: Surface Mount Technology.

0603J1000180FCR : CAPACITOR, CERAMIC, MULTILAYER, 100 V, C0G, 0.000018 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; RoHS Compliant: Yes ; Capacitance Range: 1.80E-5 microF ; Capacitance Tolerance: 1 (+/- %) ; WVDC: 100 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style:.

08053G563ZAJ2A : CAPACITOR, CERAMIC, MULTILAYER, 25 V, Y5V, 0.056 uF, SURFACE MOUNT, 0805. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 0.0560 microF ; Capacitance Tolerance: 80 (+/- %) ; WVDC: 25 volts ; Mounting Style: Surface Mount Technology.

DBA20B : 2 A, SILICON, BRIDGE RECTIFIER DIODE. s: Diode Type: BRIDGE RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 40000 mA ; Pin Count: 4 ; Number of Diodes: 4.

DMA10I1600PA : 1600 V, SILICON, RECTIFIER DIODE, TO-220AC. s: Package: ROHS COMPLIANT, PLASTIC PACKAGE-2 ; Number of Diodes: 1 ; VRRM: 1600 volts ; IF: 120000 mA.

SMR-3R00-5.0 : RES,SMT,METAL ALLOY,3 OHMS,5% +/-TOL,-50,50PPM TC,4724 CASE. s: Category / Application: Current Sensing, General Use.

1676153-1 : RESISTOR, THIN FILM, 0.1 W, 0.1 %, 10 ppm, 10000 ohm, SURFACE MOUNT, 0805. s: Category / Application: General Use ; Technology / Construction: Thin Film (Chip) ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), 0805, CHIP, ROHS COMPLIANT ; Resistance Range: 10000 ohms ; Tolerance: 0.1000 +/- % ; Temperature Coefficient: 10 ±ppm/°C ; Power.

168CMQ060 : 160 A, 60 V, SILICON, RECTIFIER DIODE, TO-249AA. s: Arrangement: Common Catode ; Diode Type: General Purpose, RECTIFIER DIODE ; Diode Applications: Rectifier ; IF: 160000 mA ; Pin Count: 3 ; Number of Diodes: 2.

30R160 : RESISTOR, TEMPERATURE DEPENDENT, PTC RESETTABLE FUSE, 0.03 ohm, THROUGH HOLE MOUNT. s: Category / Application: General Use ; Mounting / Packaging: ThroughHole, Radial Leads, RADIAL LEADED, LEAD FREE ; Resistance Range: 0.0300 ohms ; Operating Temperature: -40 to 85 C (-40 to 185 F) ; Standards and Certifications: RoHS.

337RZS016MSA : CAPACITOR, ALUMINUM ELECTROLYTIC, NON SOLID. s: Applications: General Purpose ; Electrolytic Capacitors: Aluminum Electrolytic.

473MSS100K : CAPACITOR, METALLIZED FILM, POLYESTER, 100 V, 0.047 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Technology: Film Capacitors ; Applications: General Purpose ; Electrostatic Capacitors: Polyester ; RoHS Compliant: Yes ; Capacitance Range: 0.0470 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 100 volts ; Mounting Style:.

 
0-C     D-L     M-R     S-Z