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Details, datasheet, quote on part number: MRF150
 
 
Part numberMRF150
CategoryDiscrete => Transistors => Bipolar => RF
Description150 W, N-channel MOS Linear RF Power Fet
CompanyM/A-COM, Inc.
DatasheetDownload MRF150 datasheet
 


 
Specifications, Features, Applications

Designed primarily for linear large­signal output stages to 150 MHz frequency range.· Specified 50 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain 17 dB (Typ) Efficiency = 45% (Typ)· Superior High Order IMD· (150 W PEP) 32 dB (Typ)· (150 W PEP) 60 dB (Typ)· 100% Tested For Load Mismatch At All Phase Angles With 30:1 VSWR

Rating Drain­Source Voltage Drain­Gate Voltage Gate­Source Voltage Drain Current Continuous Total Device Dissipation = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGO VGS ID PD Tstg TJ Value +150 200 Unit Vdc Adc Watts W/°C °C

Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 0.6 Unit °C/W

NOTE CAUTION MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.

Drain­Source Breakdown Voltage (VGS = 100 mA) Zero Gate Voltage Drain Current (VDS 50 V, VGS = 0) Gate­Body Leakage Current (VGS 20 V, VDS = 0) V(BR)DSS IDSS IGSS 5.0 1.0 Vdc mAdc µAdc

Gate Threshold Voltage (VDS = 100 mA) Drain­Source On­Voltage (VGS 10 A) Forward Transconductance (VDS 5.0 A) VGS(th) VDS(on) gfs Vdc mhos

Input Capacitance (VDS 50 V, VGS = 1.0 MHz) Output Capacitance (VDS 50 V, VGS = 1.0 MHz) Reverse Transfer Capacitance (VDS 50 V, VGS = 1.0 MHz) Ciss Coss Crss 40 pF

Common Source Amplifier Power Gain (VDD 50 V, Pout 150 W (PEP), IDQ = 250 mA) = 30 MHz = 150 MHz Gps dB %

Drain Efficiency (VDD 50 V, Pout 150 W (PEP), 30; 30.001 MHz, ID (Max) 3.75 A) Intermodulation Distortion (1) (VDD 50 V, Pout 150 W (PEP), = 30 MHz, = 30.001 MHz, IDQ = 250 mA) Load Mismatch (VDD 50 V, Pout 150 W (PEP), 30; 30.001 MHz, IDQ = 250 mA, VSWR 30:1 at all Phase Angles)

Intermodulation Distortion (1) and Power Gain (VDD 50 V, Pout 50 W (PEP), = 30 MHz, = 30.001 MHz, IDQ 3.0 A) GPS IMD(d9 dB

NOTE: To MIL­STD­1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone. L1 BIAS C5 R1 DUT T2 RF INPUT C3 RF OUTPUT 50 V

470 pF Dipped Mica 0.1 µF Ceramic Chip or Monolythic with Short Leads 200 pF Unencapsulated Mica or Dipped Mica with Short Leads 15 pF Unencapsulated Mica or Dipped Mica with Short Leads

µF/100 V Electrolytic L1 VK200/4B Ferrite Choke or Equivalent, µH L2 Ferrite Bead(s), /1.0 W Carbon /1.0 W Carbon (or W in Parallel T1 9:1 Broadband Transformer T2 1:9 Broadband Transformer

Figure 3. Output Power versus Input Power
Figure 5. Common Source Unity Gain Frequency versus Drain Current
Figure 6. Gate Voltage versus Drain Current



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