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Details, datasheet, quote on part number: MRF151
 
 
Part numberMRF151
CategoryDiscrete => Transistors => Bipolar => RF
Description150 W, N-channel MOS Broadband RF Power Fet
CompanyM/A-COM, Inc.
DatasheetDownload MRF151 datasheet
Request For QuoteFind where to buy MRF151
 


 
Specifications, Features, Applications

Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands.· Guaranteed Performance at 30 MHz, 50 V: Output Power 150 W Gain (22 dB Typ) Efficiency 40%· Typical Performance at 175 MHz, 50 V: Output Power 150 W Gain 13 dB· Low Thermal Resistance· Ruggedness Tested at Rated Output Power· Nitride Passivated Die for Enhanced Reliability

Rating Drain­Source Voltage Drain­Gate Voltage Gate­Source Voltage Drain Current Continuous Total Device Dissipation = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGO VGS ID PD Tstg TJ Value +150 200 Unit Vdc Adc Watts W/°C °C

Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 0.6 Unit °C/W

NOTE CAUTION MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.

Drain­Source Breakdown Voltage (VGS = 100 mA) Zero Gate Voltage Drain Current (VDS 50 V, VGS = 0) Gate­Body Leakage Current (VGS 20 V, VDS = 0) V(BR)DSS IDSS IGSS 5.0 1.0 Vdc mAdc µAdc

Gate Threshold Voltage (VDS = 100 mA) Drain­Source On­Voltage (VGS 10 A) Forward Transconductance (VDS 5.0 A) VGS(th) VDS(on) gfs Vdc mhos

Input Capacitance (VDS 50 V, VGS = 1.0 MHz) Output Capacitance (VDS 50 V, VGS = 1.0 MHz) Reverse Transfer Capacitance (VDS 50 V, VGS = 1.0 MHz) Ciss Coss Crss 15 pF

Common Source Amplifier Power Gain, 30; 30.001 MHz (VDD 50 V, Pout 150 W (PEP), IDQ = 250 mA) = 175 MHz Drain Efficiency (VDD 50 V, Pout 150 W (PEP), 30; 30.001 MHz, ID (Max) 3.75 A) Intermodulation Distortion (1) (VDD 50 V, Pout 150 W (PEP), = 30 MHz, = 30.001 MHz, IDQ = 250 mA) Load Mismatch (VDD 50 V, Pout 150 W (PEP), 30; 30.001 MHz, IDQ = 250 mA, VSWR 30:1 at all Phase Angles) Gps dB %

Intermodulation Distortion (1) and Power Gain (VDD 50 V, Pout 50 W (PEP), = 30 MHz, = 30.001 MHz, IDQ 3.0 A) GPS IMD(d9 dB

NOTE: To MIL­STD­1311 Version A, Test Method 2204B, Two Tone, Reference Each Tone. BIAS ­ RF OUTPUT

470 pF Dipped Mica 0.1 µF Ceramic Chip or Monolythic with Short Leads 200 pF Unencapsulated Mica or Dipped Mica with Short Leads 15 pF Unencapsulated Mica or Dipped Mica with Short Leads µF/100 V Electrolytic

L1 VK200/4B Ferrite Choke or Equivalent, µH L2 Ferrite Bead(s), /1.0 W Carbon /1.0 W Carbon (or W in Parallel) T1 9:1 Broadband Transformer T2 1:9 Broadband Transformer Board Material 0.062 Fiberglass (G10), 1 oz. Copper Clad, 2 Sides, = 5

C2, C8 Arco 463 or equivalent C3 25 pF, Unelco C4 0.1 µF, Ceramic C5 1.0 µF, 15 WV Tantalum C6 15 pF, Unelco C7 25 pF, Unelco J101 C9 Arco 262 or equivalent C10 0.05 µF, Ceramic C11 15 µF, 60 WV Electrolytic D1 1N5347 Zener Diode

3/4, #18 AWG into Hairpin L2 Printed Line, 1, #16 AWG into Hairpin L4 2 Turns, #16 AWG, RFC1 5.6 µH, Choke 1.0 W Carbon 1/2 W Carbon 1/2 W Carbon Board Material 0.062 Fiberglass (G10), 1 oz. Copper Clad, 2 Sides, = 5.0

Figure 4. Gate­Source Voltage versus Case Temperature



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