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Part: MRF275G
Category:
Discrete
-> Transistors
-> Bipolar
-> RF
Description: RF Power Field-effect Transistor
Company: M/A-COM, Inc.
Datasheet: Download MRF275G datasheet File size : 448 kB
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Datasheet text preview:
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF275G/D
The RF MOSFET Line
Power Field-Effect Transistor
NChannel EnhancementMode
Designed primarily for wideband largesignal output and driver stages from 100 500 MHz. · Guaranteed Performance @ 500 MHz, 28 Vdc Output Power -- 150 Watts Power Gain -- 10 dB (Min) Efficiency -- 50% (Min) 100% Tested for Load Mismatch at all Phase Angles with VSWR 30:1 · Overall Lower Capacitance @ 28 V Ciss -- 135 pF Coss -- 140 pF Crss -- 17 pF · Simplified AVC, ALC and Modulation Typical data for power amplifiers in industrial and commercial applications: G · Typical Performance @ 400 MHz, 28 Vdc G Output Power -- 150 Watts Power Gain -- 12.5 dB Efficiency -- 60% · Typical Performance @ 225 MHz, 28 Vdc Output Power -- 200 Watts Power Gain -- 15 dB Efficiency -- 65%
D
MRF275G
150 W, 28 V, 500 MHz NCHANNEL MOS BROADBAND 100 500 MHz RF POWER FET
S (FLANGE) CASE 37504, STYLE 2 D
MAXIMUM RATINGS
Rating DrainSource Voltage DrainGate Voltage (RGS = 1.0 M) GateSource Voltage Drain Current -- Continuous Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VDGR VGS ID PD Tstg TJ Characteristic Thermal Resistance, Junction to Case Symbol RJC Value 65 65 ± 40 26 400 2.27 65 to +150 200 Unit Vdc Vdc Adc Adc Watts W/°C °C °C
THERMAL CHARACTERISTICS
Max 0.44 Unit °C/W
NOTE CAUTION MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
REV 1
1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS (1)
DrainSource Breakdown Voltage (VGS = 0, ID = 50 mA) Zero Gate Voltage Drain Current (VDS = 28 V, VGS = 0) GateSource Leakage Current (VGS = 20 V, VDS = 0) V(BR)DSS IDSS IGSS 65 -- -- -- -- -- -- 1 1 Vdc mA µA
ON CHARACTERISTICS (1)
Gate Threshold Voltage (VDS = 10 V, ID = 100 mA) DrainSource OnVoltage (VGS = 10 V, ID = 5 A) Forward Transconductance (VDS = 10 V, ID = 2.5 A) VGS(th) VDS(on) gfs 1.5 0.5 3 2.5 0.9 3.75 4.5 1.5 -- Vdc Vdc mhos
DYNAMIC CHARACTERISTICS (1)
Input Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) Output Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) Reverse Transfer Capacitance (VDS = 28 V, VGS = 0, f = 1 MHz) Ciss Coss Cr s s -- -- -- 135 140 17 -- -- -- pF pF pF
FUNCTIONAL CHARACTERISTICS (2) (Figure 1)
Common Source Power Gain (VDD = 28 V, Pout = 150 W, f = 500 MHz, IDQ = 2 x 100 mA) Drain Efficiency (VDD = 28 V, Pout = 150 W, f = 500 MHz, IDQ = 2 x 100 mA) Electrical Ruggedness (VDD = 28 V, Pout = 150 W, f = 500 MHz, IDQ = 2 x 100 mA, VSWR 30:1 at all Phase Angles) 1. Each side of device measured separately. 2. Measured in pushpull configuration. Gps No Degradation in Output Power 10 50 11.2 55 -- -- dB %
REV 1
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A
B C17 C18 L5 L6 +28 V C19 +
+VGG C14 R1 L1 C1 Z1 C2 B1 C3 Z2 C4 L2 A C20 C21 L4 B Z4 Z6 Z8 C5 C6 C7 C8 Z3 D.U.T. Z5 Z7 C15 C16 C22 L3
C10
C11 C9 C12 B2
C13
B1 B2 C1, C2, C3, C4, C10, C11, C12, C13 C5, C8 C6 C7 C9 C14, C15, C16, C20, C21, C22 C17, C18 C19 L1, L2
Balun, 50 , 0.086 O.D. 2 Long, Semi Rigid Coax Balun, 50 , Coax 0.141 O.D. 2 Long, Semi Rigid 270 pF, ATC Chip Capacitor 1.0 20 pF, Trimmer Capacitor, Johanson 22 pF, MiniUnelco Capacitor 15 pF, Unelco Capacitor 2.1 pF, ATC Chip Capacitor 0.1 µF, Ceramic Capacitor 680 pF, Feedthru Capacitor 10 µF, 50 V, Electrolytic Capacitor, Tantalum 10 Turns AWG #24, 0.145 O.D., 106 nH TaylorSpring Inductor 10 Turns AWG #18, 0.340 I.D., Enameled Wire
L5 L6 R1 W1 W4
Z1, Z2 Z3, Z4, Z5, Z6 Z7, Z8
Ferroxcube VK200 20/4B 4 Turns #16, 0.340 I.D., Enameled Wire 1.0 k,1/4 W Resistor 20 x 200 x 250 mils, Wear Pads, BerylliumCopper, (See Component Location Diagram) 1.10 x 0.245, Microstrip Line 0.300 x 0.245, Microstrip Line 1.00 x 0.245, Microstrip Line
Board material 0.060 Teflonfiberglass, r = 2.55, copper clad both sides, 2 oz. copper. Points A are connected together on PCB. Points B are connected together on PCB.
L3, L4
Figure 1. 500 MHz Test Circuit
REV 1
3
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