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Details, datasheet, quote on part number:PH0814-40
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Datasheet text preview:
I
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an AMP company
Linear Power Transistor, 40W 850 - 1450 MHz
Features
l l l l l l l l
NPN Silicon Microwave Power Transistor Common Emitter Configuration Broadband Class AB Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package
Absolute`tiaximum
I Parameter 1 Collector-BaseVoltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Total Power Dissipation junction Temperature Storage Temperature Thermal Resistance (
Ratinas at 25°C
/ Symbol ( V,,, VEs VEBO `c PTO: TJ T ST0 8JC 1 Rating 56 56 3.0 5.6 175 200 -55 to +200 1.0 1 Units I v V v A W "C "C "Cl-W
UNLESS CT-IERVISE NOTED. TCLERANCES ARE
1 I
it
.060'.002 (1521.05) f :NCH~:S ZOO5 :M!, LIHETERS T,13MM, -
Electrical Characteristics
I Parameter Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Current Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage DC Forward Current Gain Input Power CollectorCurrent Input Return Loss Saturated Output Power Load Mismatch Tolerance Load Mismatch Tolerance
at 25°C
( Symbol BV,,, ICES BV,,,
BvEBO
1 Min 56
1 Max 1 Units 1 5.0 V mA V V w A I,=50 mA v,,=2a v I,=50 mA I,=1 0 mA V,,=5.0 V, 1,=0.5 A
Test Conditions
56 3.0 15 5.5 -
100 8.8 3.75
hFE P,N `c RL PST VSWR-T VSWR-T
V,,=28 V, I,,=12 mA, PO,,=42 W, F=1450 MHz V,,=28 V, I& 2 mA, PO,?42 W, F=l450 MHz
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Typical Optimum Device Impedances
F(MHz) 850 z,(n)
950 1050 1150 1250 1350 1450
Specifications Subject
2.0 - j3.6 2.4 - j2.5 3.1 - il.8 3.5 - il.9 3.3 - j2.4 2.5 - j2.4 1.7-j1.8 to Change Without
1.4 - j0.5 1.2-jO.l
Notice.
9-102
North America: Tel. (800) 366-2266 Fax (800) 618-8883
n
M/A-COM,
Asia/Pacific: Tel. +81 (03) 3226-1671 Fax +81 (03) 3226-1451 = Europe:
Inc.
Tel. +44 (1344) 869 595 Fax +44 (1344) 300 020
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