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Details, datasheet, quote on part number:PH1090-350L
 
 
Part:PH1090-350L
Category:Discrete => Transistors => Bipolar => RF
Description:1030-1090 MHz,350 W, 250 MS Pulse,avionic Pulsed Power Transistor
Company:M/A-COM, Inc.
Datasheet:Download PH1090-350L datasheet   File size : 64 kB
Request For quote:  Find where to buy PH1090-350L
 



Datasheet text preview:
Avionics Pulsed Power Transistor 350 Watts, 1030-1090 MHz, 250µs Pulse, 10 % Duty
PH1090-350L
PH1090-350L
Avionics Pulsed Power Transistor - 350 Watts, 1030-1090 MHz, 250µs Pulse, 10% Duty
Features
· · · · · · · · NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package
Outline Drawing
1
Description
M/A-COM's PH1090-350L is a silicon bipolar NPN power transistor intended for use in L-band, 1.2 - 1.4 GHz avionics equipment such as IFF, mode-S and TCAS systems. Designed for common-base, class C, broadband pulsed power applications, the PH1090-350L delivers 7.5 dB of gain at 350 watts of output power when operating with long pulse length (250µS), at 10 percent duty cycle. The transistor is housed in a 2-lead, rectangular metal-ceramic flange package, with internal input and output impedance matching networks. Diffused emitter ballast resistors and gold metalization assure ruggedness and long-term reliability.
Notes: (unless otherwise specified) 1. Tolerances are: inches ± .005" (millimeters ± 0.13mm)
Narrowband Test Fixture Impedance
F (MHz) Z IF () 2.5 - j1.5 Z OF () 1.1 + j0.9 1090
Absolute Maximum Rating at 25°C
Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Total Power Dissipation @ +25°C Storage Temperature Junction Temperature Symbol VCES VEBO IC PTOT Tstg Tj Rating 80 3.0 17 750 -65 to +200 200 Units V V A W °C °C
TEST FIXTURE INPUT CIRCUIT
TEST FIXTURE OUTPUT CIRCUIT
50
ZIF
ZOF
50
Electrical Specifications at 25°C
Symbol
BVCES
ICES RTH(JC) Pin GP RL VSWR-T VSWR-S
Parameter Collector-Emitter Breakdown Collector-Emitter Leakage Thermal Resistance Input Power Power Gain Collector Efficiency Input Return Loss Load Mismatch Tolerance Load Mismatch Stability
Test Conditions IC=250mA VCE=45 V VCC=45 V, Pin=350 W, f=1090 MHz VCC=45 V, Pin=350 W, f=1090 MHz VCC=45 V, Pin=350 W, f=1090 MHz VCC=45 V, Pin=350 W, f=1090 MHz VCC=45 V, Pin=350 W, f=1090 MHz VCC=45 V, Pin=350 W, f=1090 MHz VCC=45 V, Pin=350 W, f=1090 MHz
M in 80 8. 0 55 9 -
Max 25 0.2 55 2:1 1.5:1
Units V mA ° C/W W dB % dB V2.00
M/A-COM Division of AMP Incorporated 3 North America: Tel. (800) 366-2266, Fax (800) 618-8883 3 Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087 3 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www .macom.com
AMP and Connecting at a Higher Level are trademarks. Specifications subject to change without notice.
Avionics Pulsed Power Transistor 350 Watts, 1030-1090 MHz, 250µs Pulse, 10 % Duty
PH1090-350L
Test Fixture Electrical Schematic
Top View
Circuit Dimensions
V2.00 M/A-COM Division of AMP Incorporated 3 North America: Tel. (800) 366-2266, Fax (800) 618-8883 3 Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087 3 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www .macom.com
AMP and Connecting at a Higher Level are trademarks. Specifications subject to change without notice.