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Part: PH1214-12M
Category:
Discrete
-> Transistors
-> Bipolar
-> RF
Description: 1200-1400 MHz,12 W, 150 MS Pulse,radar Pulsed Power Transistor
Company: M/A-COM, Inc.
Datasheet: Download PH1214-12M datasheet File size : 241 kB
Request For quote: Find where to buy PH1214-12M
Datasheet text preview:
Radar Pulsed Power Transistor 12 Watts, 1.20-1.40 GHz
PH1214-12M
PH1214-12M
Radar Pulsed Power Transistor - 12 Watts, 1.20-1.40 GHz, 150 µS Pulse, 10% Duty
Features
· · · · · · · · NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package
Outline Drawing
1
Description
M/A-COM's PH1214-12M is a silicon bipolar NPN power transistor intended for use in L-band 1.2 - 1.4 GHz pulsed radar's such as air traffic control and long-range weather radars. Designed for common-base, class C, broadband pulsed power applications, the PH1214-12M can produce 12 watts of output power with medium pulse length (150µS) at 10 percent duty cycle. The transistor is housed in a 2-lead, rectangular metalceramic flange package, with internal input and output impedance matching networks. Diffused emitter ballast resistors and gold metalization assure ruggedness and long-term reliability.
Notes: (unless otherwise specified) 1. Tolerances are: inches ± .005" (millimeters ± 0.13mm)
Broadband Test Fixture Impedance
F (GHz) 1.20 1.30 1.40 Z IF () 3.7 - j5.3 3.5 - j4.4 3.4 - j3.8 Z OF () 5.0 + j6.0 7.1 + j5.1 7.7 + j3.6
Absolute Maximum Rating at 25°C
Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Total Power Dissipation @ +25°C Storage Temperature Junction Temperature Symbol VCES VEBO IC PTOT Tstg Tj Rating 60 3.0 1.3 40 -65 to +200 200 Units V V A W °C °C
TEST FIXTURE INPUT CIRCUIT
TEST FIXTURE OUTPUT CIRCUIT
50
ZIF
ZOF
50
Electrical Specifications at 25°C
Symbol BVCES ICES RTH(JC) PIN GP RL VSWR-T VSWR-S Parameter Collector-Emitter Breakdown Collector-Emitter Breakdown Thermal Resistance Input Power Power Gain Collector Efficiency Input Return Loss Load Mismatch Tolerance Load Mismatch Stability Test Conditions IC = 12.5 mA VCE = 40 V VCC = 28 V, Po = 12 W, f = 1.2, 1.3, 1.4 GHz VCC = 28 V, Po = 12 W, f = 1.2, 1.3, 1.4 GHz VCC = 28 V, Po = 12 W, f = 1.2, 1.3, 1.4 GHz VCC = 28 V, Po = 12 W, f = 1.2, 1.3, 1.4 GHz VCC = 28 V, Po = 12 W, f = 1.2, 1.3, 1.4 GHz VCC = 28 V, Po = 12 W, f = 1.2, 1.3, 1.4 GHz VCC = 28 V, Po = 12 W, f = 1.2, 1.3, 1.4 GHz M in 60 8. 5 45 9 Max 1.25 3.7 1.5 3:1 1.5:1 Units V mA °C/W W dB % dB V2.00 M/A-COM Division of AMP Incorporated 3 North America: Tel. (800) 366-2266, Fax (800) 618-8883 3 Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087 3 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www .macom.com
AMP and Connecting at a Higher Level are trademarks. Specifications subject to change without notice.
Radar Pulsed Power Transistor 12 Watts, 1.20-1.40 GHz
PH1214-12M
Test Fixture Electrical Schematic
Top View
Circuit Dimensions
V2.00 M/A-COM Division of AMP Incorporated 3 North America: Tel. (800) 366-2266, Fax (800) 618-8883 3 Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087 3 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www .macom.com
AMP and Connecting at a Higher Level are trademarks. Specifications subject to change without notice.
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