|Category||RF & Microwaves => Switches|
|Description||DC-3 Ghz, GAAS SPDT Reflective Switch|
|Datasheet||Download SW-110 datasheet
|Some Part number from the same manufacture M/A-COM, Inc.|
|SW-112 20-2000 Mhz, SPDT RF Switch|
|SW-112PIN SPDT RF Switch 20 - 2000 MHZ|
|SW-114 10-2000 Mhz, SP4T RF Switch|
|SW-121 10-1000 Mhz, SPST RF Switch|
|SW-121PIN SPST RF Switch 10 - 1000 MHZ|
|SW-124 10-1000 Mhz, SP4T RF Switch|
|SW-124PIN Sp4t RF Switch 10 - 1000 MHZ|
|SW-132 20-2000 Mhz, SPST RF Switch|
|SW-137 0.01-3 Ghz, GAAS SPDT Reflective Switch|
|SW-162 20-1500 Mhz, Matched SPDT RF Switch|
|SW-163 20-1500 Mhz, Matched SP3T RF Switch|
|SW-163PIN Matched Sp3t RF Switch 20 - 1500 MHZ|
|SW-164 20-1500 Mhz, Matched SP4T RF Switch|
|SW-205 Matched GAAS SPDT Switch, 5 - 3000 MHZ|
|SW-206PIN Matched GAAS SPDT Switch 5 - 3000 MHZ|
|SW-207 GaAs SPDT Switch, 5 - 3000 MHZ|
|SW-214 GaAs SPST Switch, DC - 3 GHZ|
|SW-214PIN GAAS SPST Switch DC - 3 GHZ|
|SW-215 Matched GAAS SPST Switch, 5 - 3000 MHZ|
|SW-216PIN Matched GAAS SPST Switch 5 - 3000 MHZ|
|SW-217 GaAs SPDT Switch, 5 - 2000 MHZ|
2082-6193-08 : Fixed Coaxial Attenuators
SMA1031 : LNAs 10 to 1000 MHZ Cascadable Amplifier
MA45355A : X BAND, 33 pF, 45 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE Specifications: Diode Type: VARIABLE CAPACITANCE DIODE
MA48701B155 : mm WAVE BAND, GALLIUM ARSENIDE, STEP RECOVERY DIODE Specifications: Configuration: Single ; Pin Count: 2 ; Number of Diodes: 1 ; VBR: 15 volts ; CT: 0.1500 to 0.2490 pF
MA48702A155 : mm WAVE BAND, GALLIUM ARSENIDE, STEP RECOVERY DIODE Specifications: Configuration: Single ; Pin Count: 2 ; Number of Diodes: 1 ; VBR: 15 volts ; CT: 0.2500 to 0.3490 pF
MA48709A95 : mm WAVE BAND, GALLIUM ARSENIDE, STEP RECOVERY DIODE Specifications: Configuration: Single ; Pin Count: 2 ; Number of Diodes: 1 ; VBR: 25 volts ; CT: 0.4500 to 0.5490 pF
MA4P202-1088 : SILICON, PIN DIODE Specifications: Package: ROHS COMPLIANT, CERAMIC, CASE 1056, 2 PIN ; Number of Diodes: 1 ; PD: 300 milliwatts ; RoHS Compliant: RoHS
MA4ST554A : L-KU BAND, 0.8 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE Specifications: Diode Type: VARIABLE CAPACITANCE DIODE
MADRCC0007PIN : SPECIALTY INTERFACE CIRCUIT, PDSO8 Specifications: Technology: CMOS ; Supply Voltage: 5V ; Operating Temperature: -40 to 85 C (-40 to 185 F) ; Package Type: SOIC, GREEN, PLASTIC, MS-012AA, SOIC-8 ; Pins: 8 ; Features: RoHS
ML48703A-94 : mm WAVE BAND, 15 V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE Specifications: Diode Type: VARIABLE CAPACITANCE DIODE
ML6516-801D : 12000 MHz - 18000 MHz RF/MICROWAVE SGL POLE SGL THROW SWITCH, 2.2 dB INSERTION LOSS Specifications: Frequency Range: 12000 to 18000 MHz ; Insertion Loss: 2.2 dB ; VSWR: 1.9 1 ; Type: Single Pole Single Throw ; Operating Temperature: -55 to 85 C (-67 to 185 F)
MLA2645-304B1 : 3700 MHz - 4200 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER Specifications: Amplifier Type: Power Amplifier ; Applications: RF Microwave ; Frequency Range: 3700 to 4200 MHz ; Input VSWR: 1.8 1 ; Output VSWR: 1.8 1 ; Operating Temperature: -55 to 95 C (-67 to 203 F)
AS158-59 : GAAS ic High Linearity Positive Contro. GaAs IC High Linearity Positive Control SPDT Switch DC2.5 GHz High Linearity (55 dBm @ 1.9 GHz) High Isolation @ 1.9 GHz) Complementary Control Voltages (0/+5 V) Low DC Power Consumption Small Low Cost MSOP-8 Plastic Package The an IC FET SPDT switch in a low cost MSOP-8 plastic package. The AS158-59 extremely high linearity, low insertion loss and positive.
BX5149 : Frequency (MHz) = 5 - 150 ;; Gain (Typ/Min) (dB) = 23.5 / 22.5 ;; Noise Figure (Typ/Max) (dB) = 3 / 3.2 ;; P1dB Comp Point (Typ/Min) (dBm) = +18 / +17 ;; 3rd Order Intercept (Typ) (dBm) = +33 ;; 2nd Order Intercept (Typ) (dBm) = +37 ;; DC Power (Typ) (V/mA) = +15 / +35 ;; Package = Package = Package = 4 Pin TO-8 Package = Surface Mount Package = Flatpack.
DPM08036 : 10-1000MHz Pulse Modulator.
FAR-C4CN : Piezoelectric Resonator ( 4 to 23.9 MHZ ). Fujitsu resonators C4 series (N type) feature originally developed single crystals with a high electro-mechanical coefficient (LiNbO3: lithium niobate), the result is very compact packaging. C4 series (N type) with built-in capacitors for exclusive use in microcomputer clocks, and this series is ultra low profile CHIP type device for surface-mount (SMT).
FT500DL : Phase Control SCR 500 Amperes Avg 200-1400 Volts.
HMJ1 : . The is a high dynamic range, GaAs FET mixer. This active FET mixer realizes a typical third order intercept point of +39 dBm an LO drive level of +17 dBm. The HMJ1 comes in a low cost, J-lead package. Typical applications include frequency up/down conversion, modulation and demodulation for receivers and transmitters used in cellular communications.
HMMC-1015 : DC-50 GHZ Variable Attenuator (Higher P-1dB). Specified Frequency Range: DC26.5 GHz Pin (-1dB): 27 dBm @ 500 MHz Return Loss: 10 dB Minimum Attenuation: 2.0 dB Chip Size: Chip Size Tolerance: Chip Thickness: x 24.0 mils) µm (±0.4 mils) ± 0.6 mils) The is a monolithic, voltage variable, GaAs IC attenuator that operates from to 50 GHz. The distributed topology of the HMMC-1015 minimizes the parasitic.
MH1 : . Required RF 1700-2000 MHz LO 1450-1950 MHz IF 50-250 MHz IF +17 dBm Drive Level Low Cost SOIC-8 Package No External Bias Required The is a passive FET mixer that provides high dynamic range performance in a low cost SOIC-8 package. WJ's FET based MH1 uses patented techniques to realize +30 dBm an LO drive level of +17 dBm. The product is fully self.
RMWP26001 : MMIC. Circuit = 24-26.5 GHZ Power Amplifier Mmic ;; Frequency = 24-26.5 GHZ ;; SS Gain = 23 DB ;; Pout @ 1dB = 24 DBM.
SMV1705-079 : Tuning Varactor. Hyperabrupt Junction Tuning Varactor. Designed for High Volume, Low Cost Battery Applications Low Series Resistance High Capacitance Ratio Available Lead (Pb)-Free @ 250°C per JEDEC J-STD-020 Ultra Small Size SC-79 Package Available in Tape and Reel Packaging The SMV1705 series are silicon hyperabrupt junction varactor diodes specifically designed for battery operation. The specified high.
STDD15 : Detection. Low Capactitance Detection Diode. MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) AND BENEFITS Low diode capacitance Device designed for RF application Low profile package Available in 3 configurations Very low parasitic inductor & resistor The is a dual diode series for the detection a RF signal and the compensation of the voltage drift with the temperature. The SOT323 package.
STM-2116 : Active Mixers. 1800-2100 MHZ High Linearity Active Transmit Mixer. The Sirenza Microdevices' is a high linearity active mixer for use in a wide variety of communication systems covering the 1800-2100 MHz frequency bands. This device operates from a single 5V supply and provides dB of conversion gain while requiring only 0dBm input to the integrated LO driver. The STM-2116 also includes an integrated on chip IF amplifier.
TMXP337 : IF SAW Filter. FC (MHz) = 85.38 ;; Min B (dB) = -5.0 ;; Min B (MHz) = 1.26 ;; Max B (dB) = -33.0 ;; Max B (MHz) = 1.8 ;; Typical il (dB) = 11.5 ;; Package (mm2) = 9.1x4.8 ;; Configuration Input/output = Null ;; Application = Cdma RX ;; = Subscriber ;; = Cdma ;; =.
BFG310W/XR : NPN 14 GHz wideband transistor NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343R plastic package. High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability Applications Intended for Radio Frequency (RF) front end applications in the GHz range, such as: analog and digital cellular.
MAX7057 : 300MHz To 450MHz Frequency-Programmable ASK/FSK Transmitter The MAX7057 frequency-programmable UHF transmitter is designed to transmit ASK/FSK data at a wide range of frequencies from 300MHz to 450MHz. The MAX7057 has internal tuning capacitors at the output of the power amplifier that are programmable for matching to an antenna or load. This allows.
MAX8805 : 600mA/650mA PWM Step-Down Converters In 2mm X 2mm WLP For WCDMA PA Power The MAX8805W/MAX8805X/MAX8805Y/MAX8805Z high-frequency step-down converters are optimized for dynamically powering the power amplifier (PA) in WCDMA or NCDMA handsets. The devices integrate a high-efficiency PWM step-down converter for medium- and low-power transmission, and a 60m?.
MLX71122 : Receiver - 300 To 930MHz FSK/FM/ASK, Multi-Channel Programmable (32L QFN 5x5 Quad) The MLX71122 is a multi-channel receiver IC based on a double-conversion super-heterodyne architecture. It is designed to receive FSK and ASK modulated RF signals either in 8 predefined frequency channels or frequency programmable via a 3-wire serial programming interface.