|Category||RF & Microwaves => Switches|
|Description||20-2000 Mhz, SPDT RF Switch|
|Datasheet||Download SW-112 datasheet
Ultra Broadband High Isolation 70 dB Typical Integral TTL Driver Hermetic Package
Dimensions ( ) are in mm. Unless Otherwise Noted:.xxx = ±0.010 (.xx = ±0.02 (.x = ±0.5) WEIGHT (APPROX.) 0.14 OUNCES 4 GRAMS
MIL-STD-883 screening available. * All specifications apply when operated with bias voltages of +12 VDC and -5 VDC (±5%) and 50 ohm impedance at all RF ports.
|Some Part number from the same manufacture M/A-COM, Inc.|
|SW-112PIN SPDT RF Switch 20 - 2000 MHZ|
|SW-114 10-2000 Mhz, SP4T RF Switch|
|SW-121 10-1000 Mhz, SPST RF Switch|
|SW-121PIN SPST RF Switch 10 - 1000 MHZ|
|SW-124 10-1000 Mhz, SP4T RF Switch|
|SW-124PIN Sp4t RF Switch 10 - 1000 MHZ|
|SW-132 20-2000 Mhz, SPST RF Switch|
|SW-137 0.01-3 Ghz, GAAS SPDT Reflective Switch|
|SW-162 20-1500 Mhz, Matched SPDT RF Switch|
|SW-163 20-1500 Mhz, Matched SP3T RF Switch|
|SW-163PIN Matched Sp3t RF Switch 20 - 1500 MHZ|
|SW-164 20-1500 Mhz, Matched SP4T RF Switch|
|SW-205 Matched GAAS SPDT Switch, 5 - 3000 MHZ|
|SW-206PIN Matched GAAS SPDT Switch 5 - 3000 MHZ|
|SW-207 GaAs SPDT Switch, 5 - 3000 MHZ|
|SW-214 GaAs SPST Switch, DC - 3 GHZ|
|SW-214PIN GAAS SPST Switch DC - 3 GHZ|
|SW-215 Matched GAAS SPST Switch, 5 - 3000 MHZ|
|SW-216PIN Matched GAAS SPST Switch 5 - 3000 MHZ|
|SW-217 GaAs SPDT Switch, 5 - 2000 MHZ|
|SW-219 GaAs SPDT RF Switch, DC - 3 GHZ|
AT-242TR : Digital Attenuator, 3 Bit, Single Control, 28 DB
M3H-50 : Three-Way Power Splitter/Combiner, 1 - 100MHz
MA4P277-287T : RF/microwave Diodes 100 V, Surface Mount Plastic Pin Diode
MASWSS0060 : GaAs SP3T 2.7V Cdma-gps Switch, DC - 2.5 GHZ
MA40422 : GALLIUM ARSENIDE, K-KA BAND, MIXER DIODE Specifications: Diode Type: MIXER DIODE ; Diode Applications: Mixer ; Package: BEAM LEAD PACKAGE-2 ; Pin Count: 2 ; Number of Diodes: 2
MA46413-95A : VHF-KA BAND, 1 pF, 18 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE Specifications: Diode Type: VARIABLE CAPACITANCE DIODE
ML4208-94 : 50 V, SILICON, PIN DIODE Specifications: Number of Diodes: 1
MLA2544-402A1 : 3100 MHz - 3500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER Specifications: Amplifier Type: Power Amplifier ; Applications: RF Microwave ; Frequency Range: 3100 to 3500 MHz ; Input VSWR: 1.8 1 ; Output VSWR: 1.8 1 ; Operating Temperature: -55 to 95 C (-67 to 203 F)
3089-6617-00 : 800 MHz - 900 MHz RF/MICROWAVE SPLITTER, 0.25 dB INSERTION LOSS Specifications: Frequency: 800.00 to 900.00 MHz ; Insertion Loss: 0.25 dB
AT10-0017 : 1700-2000 Mhz, Voltage Variable Absorptive Attenuator. Input IP3: +31 dBm Min (Full Attenuation Range) Input -20 dB Better than GaAs Linear Operation: +20 dBm Typ. Plastic SOIC, Wide Body, SMT Package 35 dB Dynamic Range (With 30 mA Bias Current) Single Control Voltage 50 ohm Impedance Linear Driver, DR65-0002, Available Test Boards are Available Tape and Reel Packaging Available M/A-COM's is a PIN diode.
BX7370 : Frequency (MHz) = 20 - 250 ;; Gain (Typ/Min) (dB) = 8.5 / 7.3 ;; Noise Figure (Typ/Max) (dB) = 1.9 / 3.4 ;; P1dB Comp Point (Typ/Min) (dBm) = +23 / +20 ;; 3rd Order Intercept (Typ) (dBm) = +40 ;; 2nd Order Intercept (Typ) (dBm) = +49 ;; DC Power (Typ) (V/mA) = +15 / +45 ;; Package = Package = Package = 4 Pin TO-8 Package = Surface Mount Package = Flatpack.
DBES105a : = Dual ;; Fco = 3THz ;; N Ideality Factor = 1.2 ;; Bvak = ;; Rs(Ohm) = 4.4 ;; Cjo(fF) (0V) = 9.5 ;; Case = Flip Chip.
FLK057WG : FET. C,x,ku-band Power GAAS Fets. High Output Power: = 27.0dBm(Typ.) High Gain: = 7.0dB(Typ.) High PAE: add = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package The is a power GaAs FET that is designed for general purpose applications in the Ku-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu's stringent Quality Assurance Program assures the highest.
M67 : Double-Balanced Mixer. DOUBLE-BALANCED MIXER TO 17 GHz TO 15 GHz TO 2.5 GHz LO DRIVE: +10 dBm (NOMINAL) LOW NOISE FIGURE: 6.5 dB (TYP.) SSB Conversion Loss & SSB Noise Figure (max.) to 13 GHz, to 13.5 GHz, to 500 GHz to 15 GHz, to 16 GHz, to 1000 GHz to 15 GHz, to 17 GHz, to 2000 GHz to 13.5 GHz, to 16 GHz, to 2500 GHz Isolation (min.) to 15 GHz to 17 GHz to 17 GHz 1 dB Conversion.
nRF403 : RF Transceiver 315/433MHz. True single chip FSK transceiver Few external components required No set up or configuration No coding of data required 20kbit/s data rate 2 frequency bands Wide supply range Very low power consumption Standby mode Alarm and Security Systems Automatic Meter Reading (AMR) Home Automation Remote Control Surveillance Automotive Telemetry Toys Wireless.
RFP-75-10AY : = Attenuators ;; Size LXWXH = 0.575 X 0.225 X 0.12" ;; Packaging = Flanged ;; Frequency MHZ = 0-2000 ;; Power Handling Watts = 75.
SD1433 : UHF Transistors. UHF Mobile Applications RF & Microwave Transistors. 470 MHz 12.5 VOLTS CLASS C EFFICIENCY 60% COMMON EMITTER POUT 10 W MIN. WITH 8.0 dB GAIN .280 4L STUD (M122) epoxy sealed ORDER CODE SD1433 BRANDING SD1433 The is a Class C epitaxial silicon NPN planar transistor designed for driver applications in the - 512 MHz frequency range. This device uses an emitter ballasted geometry specifically designed for optimum.
TA4011AFE : RF Cell Packs. Package = Esv ;; Application = UHF Wide Band Amp. TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic Low current: ICC 3.5 mA Wide band: = 2.4 GHz (3dB down) Operating supply voltage: VCC 1.5~3 V Characteristics Supply voltage 1 Supply voltage 2 Total power dissipation Operating temperature Storage temperature (Note1) (Note2) Symbol VCC2 PD Topr Tstg Rating Unit mW °C Note1: When VCC is operated.
TQ5M31 : = 0.5-2.5 GHZ General Purpose Rfic Mixer ;; Gain (dB) = 4 ;; NF (dB) = 8.5 ;; IIP3 (dBm) = -9.
VSeries : Low-pass Filters For Audio. Coils in V series comprise low-pass filters for audio designed to be applied to FM multiplex, Dolby system and T V sound multiplex system. 1. The V series low-pass filters consist of various types of LC type filter block developed by effective application of our coil technology. Designing compatible with various uses, such as for FM. MPX, Dolby system.
AD8312 : 50 MHz to 2.7 GHz, 45 dB RF Log Detector The AD8312 is a complete low cost subsystem for the measurement of RF signals in the frequency range of 100 MHz to 2.7 GHz, with a typical dynamic range of 45 dB, intended for use in a wide variety of cellular handsets and other wireless devices. It provides a wider dynamic range and better accuracy than possible.
MAX2059 : The MAX2059 high-linearity digital-variable-gain amplifier (DVGA) is designed to provide 56dB of total gain range and typical output IP3 and output P1dB levels of +31.8dBm and +18.4dBm, respectively. The device is ideal for a variety of applications, including single and multicarrier 1700MHz to 2200MHz DCS 1800/PCS 1900 EDGE, cdma2000®, WCDMA/UMTS,.
MMG3013NT1 : Heterojunction Bipolar Transistor Technology (InGaP HBT) Heterojunction Bipolar Transistor Technology (InGaP HBT) Broadband High Linearity Amplifier The MMG3013NT1 is a general purpose amplifier that is internally input matched and internally output matched. It is designed for a broad range of Class A, small--signal, high linearity, general purpose.
RFCR2207 : 860MHz To 960MHz Single Junction Drop-in Circulator The RFCR2207 is a small profile, low cost drop-in circulator designed for various wireless applications. The circulator a robust construction for high reliability, low insertion loss, excellent IMD (Inter-Modulation Distortion) performance, and magnetically shield. The circulator is RoHS compliant.