|Category||RF & Microwaves => Switches|
|Description||20-1500 Mhz, Matched SP3T RF Switch|
|Datasheet||Download SW-163 datasheet
Internally Terminated Integral TTL Driver Low Loss 0.9 dB Typical MIL-STD-883 Screening Available
Dimensions ( ) are in mm. Unless otherwise noted:..xxx = ±0.010 (.xx = ±0.02 (.x = ±0.5) WEIGHT (APPROX.) 0.28 OUNCES 8 GRAMS
|Some Part number from the same manufacture M/A-COM, Inc.|
|SW-163PIN Matched Sp3t RF Switch 20 - 1500 MHZ|
|SW-164 20-1500 Mhz, Matched SP4T RF Switch|
|SW-205 Matched GAAS SPDT Switch, 5 - 3000 MHZ|
|SW-206PIN Matched GAAS SPDT Switch 5 - 3000 MHZ|
|SW-207 GaAs SPDT Switch, 5 - 3000 MHZ|
|SW-214 GaAs SPST Switch, DC - 3 GHZ|
|SW-214PIN GAAS SPST Switch DC - 3 GHZ|
|SW-215 Matched GAAS SPST Switch, 5 - 3000 MHZ|
|SW-216PIN Matched GAAS SPST Switch 5 - 3000 MHZ|
|SW-217 GaAs SPDT Switch, 5 - 2000 MHZ|
|SW-219 GaAs SPDT RF Switch, DC - 3 GHZ|
|SW-221 GAAS SPST Switch Dc-4 GHZ|
|SW-222PIN GAAS SPST Switch Dc-4 GHZ|
|SW-224 GaAs SPDT Switch, DC - 2 GHZ|
|SW-224PIN GAAS SPDT Switch Dc-2 GHZ|
|SW-225 GaAs SPDT Switch, DC - 2 GHZ|
|SW-225PIN GAAS SPDT Switch Dc-2 GHZ|
|SW-226 GaAs SPDT Switch, DC - 4 GHZ|
1X703 : = Xinger Hybrid Couplers ;; Size LXWXH = 0.56 X 0.2 X 0.076" ;; Packaging = Surface Mount ;; Frequency MHZ = 3300-3700 ;; Power Handling Watts = 60.
AS227-321 : Phemt GAAS ic High Power SP3T Switch DC. Positive Low Voltage Control (0/2.75 V Operation) Low Insertion Loss @ 1 GHz) High Isolation @ 1 GHz) Excellent IIP3 (63 dBm V, 27 dBm/Tone) Miniature QFN-12 Plastic Package PHEMT Process The is a PHEMT GaAs IC SP3T antenna switch operating in the 900 MHz and 1800 MHz frequency bands. Switching between the antenna and TX/RX ports is accomplished with.
BX6487 : Frequency (MHz) = 10 - 400 ;; Gain (Typ/Min) (dB) = 15.5 / 14 ;; Noise Figure (Typ/Max) (dB) = 3.2 / 5 ;; P1dB Comp Point (Typ/Min) (dBm) = +17.5 / +15 ;; 3rd Order Intercept (Typ) (dBm) = +32 ;; 2nd Order Intercept (Typ) (dBm) = +45 ;; DC Power (Typ) (V/mA) = +15 / +33 ;; Package = Package = Package = 4 Pin TO-8 Package = Surface Mount Package = Flatpack.
BX6605 : Frequency (MHz) = 10 - 600 ;; Gain (Typ/Min) (dB) = 15.5 / 14 ;; Noise Figure (Typ/Max) (dB) = 3 / 4.5 ;; P1dB Comp Point (Typ/Min) (dBm) = +10 / +8 ;; 3rd Order Intercept (Typ) (dBm) = +23 ;; 2nd Order Intercept (Typ) (dBm) = +32 ;; DC Power (Typ) (V/mA) = +15 / +24 ;; Package = Package = Package = 4 Pin TO-8 Package = Surface Mount Package = Flatpack.
D200M : Power Dividers. = Power Dividers, Resistive-2 Way ;; Freq. Range = Dc-18 GHZ.
DA0930 : 100-2000MHz Pin Diode Vca.
F1014 : Power. Pout W = 20 ;; Freq MHZ = 400 ;; Gain DB = 12 ;; Theta JC = 2.1 ;; GM Mho = 1.6 ;; Idsat a = 11 ;; Ciss PF = 66 ;; CRSS PF = 8 ;; Coss PF = 40 ;; Die = 2 ;; Style = Single Ended ;; PKG = ap.
HMC158 : Frequency Doubler 1.3- 4.0 GHZ Input. Conversion Loss: 15 dB Fo, 3Fo, 4Fo Isolation: 40 dB Input Drive Level: to 20 dBm GaAs MMIC SMT PASSIVE FREQUENCY DOUBLER, - 4.0 GHz INPUT Typical Applications The HMC158 is suitable for: Wireless Local Loop LMDS, VSAT, and to Pt Radios UNII & HiperLAN Test Equipment The is a miniature frequency doubler in a MMIC die. Suppression of undesired fundamental.
HMC326MS8G : HBT Driver Amplifier DC 3.0 GHZ. Psat Output Power: +26 dBm > 40% PAE Output IP3: +36 dBm High Gain: 21 dB Vs: +5.0V Ultra Small Package: MSOP8G Typical Applications The HMC326MS8G is ideal for: Microwave Radios Broadband Radio Systems Wireless Local Loop Driver Amplifier The is a high efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC driver amplifier which operates.
LET20015 : Power. RF Power Transistors Ldmos Enhanced Technology in Plastic Package.
LET9085 : Power. RF Power Transistors Ldmos Enhanced Technology. N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs IS-95 CDMA PERFORMANCES POUT 20 W EFF. = 28 EDGE PERFORMANCES POUT 35 W EFF. = 35 GSM PERFORMANCES POUT 75 W EFF. = 55 EXCELLENT THERMAL STABILITY BeO FREE PACKAGE INTERNAL INPUT MATCHING ESD PROTECTION PIN CONNECTION The is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor.
RF5107 : 3V 900MHz Linear Amplifier. Typical Applications 3V CDMA/AMPS Cellular Handsets Spread-Spectrum Systems The is a high-power, high-efficiency linear amplifier IC targeting 3V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in dual-mode 3V CDMA/AMPS.
S03B1870N2 : = RF Power Hybrid Couplers ;; Size LXWXH = 1.0 X 0.50 X 0.16" ;; Packaging = Surface Mount ;; Frequency MHZ = 1750-1990 ;; Power Handling Watts = 200.
STQ-1016 : 250-1000 MHZ Direct Quadrature Modulator. The Sirenza Microdevices' is a direct quadrature modulator targeted for use in a wide range of communications systems, including cellular/PCS, GSM, CDMA, TETRA, and ISM datacom. This device a wide - 1000 MHz operating frequency band, excellent carrier and sideband suppression, and a low broadband noise floor. The STQ-1016 uses silicon germanium (SiGe).
TDA8050A : TDA8050A; QPSK Transmitter. Product File under Integrated Circuits, IC02 1999 Nov 05 Programmable gain PLL controlled carrier frequency 3-wire transmission bus 5 V supply voltage. APPLICATIONS QPSK modulation. GENERAL The Quadrature Phase Shift Keying (QPSK) transmitter is a monolithic bipolar IC dedicated to quadrature modulation of the I and Q signals. It includes: Two double.
TGF4118-EPU : HFET/pHEMT. = 18mm HFET ;; Freq(GHz) = DC - 6.0 ;; Gain (dB) = 13.5@2GHz ;; Power(dBm) = 38.5 ;; Nf/pae = 53% ;; Vd(V) = 8 ;; IQ(mA) = 1690 ;; Status = Moq.
TMXT513 : IF SAW Filter. FC (MHz) = 174.2 ;; Min B (dB) = -0.2 ;; Min B (MHz) = 0.2 ;; Max B (dB) = -1000.0 ;; Max B (MHz) = -1000.0 ;; Typical il (dB) = 2.0 ;; Package (mm2) = 5.0 X 5.0 ;; Configuration Input/output = Null ;; Application = GSM ;; = Base Station ;; = GSM ;; =.
PD85015-E : Transistors, Radio Frequency RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs.
HMC906 : 2 Watt Power Amplifier Chip, 27.3 -33.5 GHz The HMC906 is a four stage GaAs pHEMT MMIC 2 Watt Power Amplifier which operates between 27.3 and 33.5 GHz. The HMC906 provides 23 dB of gain, and +34 dBm of saturated output power and 22% PAE from a +6V supply. The RF I/Os are DC blocked and matched to 50 Ohms for ease of integration into Multi-Chip-Modules.
SKY14151-350LF : High-Power Single Pole Four Throw (SP4T) Switch With Decoder The SKY14151 is a symmetrical single pole four throw (SP4T) switch designed for broad band, high power switching applications which demand high linearity and low insertion loss. The switch is manufactured using the Skyworks state of the art pHEMT process. This is a general purpose switch that.