Details, datasheet, quote on part number: SW-259
PartSW-259
CategoryRF & Microwaves => Switches
Description GaAs SPST Switch
CompanyM/A-COM, Inc.
DatasheetDownload SW-259 datasheet
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Features, Applications
Features

Very Low Power Consumption: 50 W Low Insertion Loss: 1.0 dB High Isolation: to 2 GHz Very High Intercept Point: 46 dBm IP 3 Nanosecond Switching Speed Temperature Range: + 85C Tape and Reel Packaging Available 1

Description

M/A-COM's is a GaAs MMIC SPST terminated switch in a low cost SOIC 8-lead surface mount plastic package. The SW-259 is ideally suited for use where very low power consumption is required. Typical applications include transmit/receive switching, switch matrices, and filter banks in systems such as: radio and cellular equipment, PCM, GPS, fiber optic modules, and other battery powered radio equipment. The SW-259 is fabricated with a monolithic GaAs MMIC using a mature 1-micron process. The process features full chip passivation for increased performance and reliability.

.010(0.25) 8- Lead SOP outline dimensions Narrow body.150 (All dimensions per JEDEC No. MS-012-AA, Issue C) Dimensions ( ) are in mm. Unless Otherwise Noted:.xxx 0.010 (.xx 0.02 (.x = 0.5)

Model No. SW-259 PIN SW-259TR SW-259RTR Package SOIC 8-Lead Plastic Forward Tape & Reel Reverse Tape & Reel

Parameter Insertion Loss Test 0.1 GHz 0.5 GHz 1.0 GHz 2.0 GHz 0.1 GHz 0.5 GHz 1.0 GHz 2.0 GHz 2.0 GHz 2.0 GHz to 90% RF, RF 50% Control to 90% RF, 50% Control RF In Band Input Power 0.05 GHz Input Power 2.0 GHz Measured Relative 0.05 GHz to Input Power 2.0 GHz (for two-tone input power to +5 dBm) Measured Relative 0.05 GHz to Input Power 2.0 GHz (for two-tone input power to +5 dBm) Unit dB Min. Typ. Max

VSWR On Off Trise, Tfall Ton, Toff Transients One dB Compression Point 2nd Order Intercept 3rd Order Intercept

1. Refer to "Tape and Reel Packaging" Section, or contact factory. 2. All measurements with 0, -5 control voltages at 1 GHz a 50 system, unless otherwise specified.

Parameter Max. Input Power 0.05 GHz 2 GHz Control Voltage Storage Temperature Absolute Maximum1,2 +27 dBm +34 dBm to 150C

1. Operation of this device above any one of these parameters may cause permanent damage 2. When the RF Input power is applied to a terminated port, the absolute maximum is +32 dBm.


GaAs SPST Switch Swept Data Characterized in 75 Ohms

 

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