Details, datasheet, quote on part number: SW-442SMB
PartSW-442SMB
CategoryRF & Microwaves => Switches
DescriptionDC-3 Ghz, GAAS SPDT Terminated Switch
CompanyM/A-COM, Inc.
DatasheetDownload SW-442SMB datasheet
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Features, Applications

Features

Low Cost Plastic SOT-26 Package Low Insertion Loss @ 900 MHz High Isolation @ 900 MHz Low Power Consumption @ +3V Positive or Negative 8 V Control

Description

M/A-COM's is a GaAs monolithic switch in a low cost SOT-26 surface mount plastic package. The SW-442 is ideally suited for applications where very low power consumption, low insertion loss, very small size and low cost are required. Typical application is in dual band systems where switching between small signal components is required such as filter banks, single band LNA's, converters etc. The SW-442 can be used in applications to 0.25 Watts in systems such as CDMA, W-CDMA, PCS, DCS1800, GSM and other analog/digital wireless communications systems. The SW-442 is fabricated using a mature 0.8 micron GaAs MESFET process. The process features full passivation for increased performance and reliability.

Part Number SW-442 PIN SW-442RTR SW-442SMB Package SOT-26 Plastic Package 1 Forward Tape and Reel 1 Reverse Tape and Reel Sample Board

1. Reference Application Note M513 for reel size information.

VSWR P1dB (2.7V supply) P1dB (5V supply) IP2 (2.7V supply) IP3 (2.7V supply) Trise, Tfall Ton, Toff Transients Gate Leakage

2-Tone 900 MHz, 5 MHz spacing, 10 dBm each tone 2-Tone 900 MHz, 5 MHz spacing, 10 dBm each tone to 90% RF, RF 50% Control to 90% RF, Control 10% RF In-Band VCTL = 2.5V

AMP and Connecting at a Higher Level are trademarks. Specifications subject to change without notice.

Parameter Input Power - 3.0 GHz) 3V Control 5V Control Operating Voltage Operating Temperature Storage Temperature

1. Exceeding any one or combination of these limits may cause permanent damage.

1. External DC blocking capacitors are required on all RF ports and GND. GND capacitors can be used with postive control voltage to resonate lead inductance for improved isolation. 2. If negative control is used, DC blocking capacitors and GND capacitors are not required.

PIN No. Function RF1 GND RF2 V2 RFC V1 Description RF in/out RF Ground RF in/out V Control 2 RF COMMON V Control 1

The following precautions should be observed to avoid damage:

Static Sensitivity Gallium Arsenide Integrated Circuits are ESD sensitive and can be damaged by static electricity. Proper ESD techniques should be used when handling these devices.

Output VSWR vs. Frequency over Temperature Input VSWR vs. Frequency over Temperature
Isolation Loss vs. Frequency over Temperature (Postive Control)
Isolation Loss vs. Frequency over Temperature (Negative Control)
Insertion Loss vs. Frequency over Temperature (Postive Control)
Insertion Loss vs. Frequency over Temperature (Negative Control)

 

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