Details, datasheet, quote on part number: SW-489
PartSW-489
CategoryRF & Microwaves => Switches
Description GaAs SP3T 2.5V High Power Switch DC - 2.5 GHZ
CompanyM/A-COM, Inc.
DatasheetDownload SW-489 datasheet
Quote
Find where to buy
 
  

 

Features, Applications

Features

Low Voltage Operation 2.5V Low Harmonics > 65 dBc at +34 dBm & 1 GHz Low Insertion Loss at 1 GHz High Isolation at 2 GHz Miniature FQFP 12-lead 3x3mm Package 0.5 micron GaAs pHEMT Process

Description

M/A-COM's is a GaAs PHEMT MMIC single pole three throw (SP3T) high power switch in a low cost miniature FQFP 12-lead 3x3mm thin profile package. The SW-489 is ideally suited for applications where high power, low control voltage, low insertion loss, high isolation, small size and low cost are required. Typical applications are for GSM and DCS handset systems that connect separate transmit and receive functions to a common antenna, as well as other handset and related applications. This part can be used in all systems operating to 2.5 GHz requiring high power at low control voltage. The SW-489 is fabricated using a 0.5 micron gate length GaAs PHEMT process. The process features full passivation for performance and reliability.

PIN No. 1 2 PIN Name V3 RF3 GND RF2 V2 GND RF1 V1 GND ANT GND (paddle) Description Control 3 RF Port 3 RF Ground RF Ground RF Port 2 Control 2 RF Ground RF Port 1 Control 1 RF Ground Antenna Port RF Ground RF Ground

Parameter Max Input Power - 2.5 GHz, 2.5V Control) Operating Voltage Operating Temperature Storage Temperature

1. Exceeding any one or combination of these limits may cause permanent damage.
GaAs SP3T 2.5V High Power Switch Electrical Specifications: 50 2

Parameter Insertion Loss Test Conditions ­ 1 GHz ­ 2 GHz - 2.5 GHz ­ 1 GHz ­ 2 GHz - 2.5 GHz ­ 2.5 GHz 0V/2.5V 1 GHz, PIN = +34 dBm, 0V/2.5V 1 GHz, PIN = +34 dBm, to 90% RF, 10% RF Two Tone +22 dBm, 1 MHz Spacing, 820 MHz, Two Tone +19 dBm, 1 MHz Spacing, 1950 MHz, Units dB dBm dBc µS dBm Min. Typ.

3rd Harmonic Trise, Tfall Cross Modulation ANT - CELL3 ANT - PCS3 Cross Modulation ANT - CELL ANT - PCS Ton, Toff Transients Gate Leakage

Two Tones +22 dBm MHz, One Tone ­27 dBm @ 865 MHz Two Tones +17 dBm MHz, One Tone ­27 dBm @ 1870 MHz 50% control to 90% RF, and 50% control RF In Band |Vc| = 2.5V

2. Insertion Loss can be optimized by varying the DC Blocking Capacitor value, ie. 1000 pF for 100 MHz - 500 MHz, 100 pF for 0.5 GHz - 2.5 GHz. 3. IP3 slope versus input power is approximately 1.5:1.

Specifications subject to change without notice. North America: Tel. (800) 366-2266, Fax (800) 618-8883 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. 300 020

Visit www.macom.com for additional data sheets and product information.
GaAs SP3T 2.5V High Power Switch Typical Performance Curves

Specifications subject to change without notice. North America: Tel. (800) 366-2266, Fax (800) 618-8883 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. 300 020


 

Related products with the same datasheet
SW-489SMB
SW-489TR
Some Part number from the same manufacture M/A-COM, Inc.
SW-489SMB  GaAs SP3T 2.5V High Power Switch DC - 2.5 GHZ
SW-493
SW05-0311 DC-3 Ghz, Match GAAS SPST Absorptive Switch
SW10-0312 DC-3 Ghz, GAAS SPDT Reflective Switch
SW10-0313 DC-3 Ghz, Matched GAAS SPDT Reflective Switch
SW15-0314 DC-3 Ghz, GAAS SP4T Absorptive Switch
SW65-0003 DC-2500 Mhz, GAAS SP8T Reflective Switch
SW65-0014 DC-3 Ghz, GAAS SPST Absorptive Switch With Asic Driver
SW65-0114 DC-3 Ghz, GAAS SPDT Absorptive Switch With Asic Driver
SW65-0214 DC-3 Ghz, GAAS SP3T Absorptive Switch With Asic Driver
SW65-0313 DC-3 Ghz, GAAS SP2T Absorptive Switch With Asic Driver
SW65-0314 DC-3 Ghz, GAAS SP4T Absorptive Switch With Asic Driver
SW65-0440
SW90-0001 DC-4 Ghz, GAAS SPST Switch, Absorptive, Single Supply
SW90-0002 DC-4 Ghz, GAAS SPDT Switch, Absorptive, Single Supply
SW90-0003 DC-4 Ghz, GAAS SP4T Switch, Absorptive, Single Supply
SW90-0004 DC-4 Ghz, GAAS SP6T Switch, Absorptive, Single Supply
SW90-0004A  GaAs SP6T Switch, Absorptive, Single Supply, DC - 4 GHZ
SW90-0004TR DC-4 Ghz, GAAS SP6T Switch, Absorptive, Single Supply
SWD-109 Single/quad Driver For GAAS Fet Switche And Attenuator
SWD-109PIN Single/quad Drivers For GAAS Fet Switches And Attenuators
Same catergory

1H0263-3 : = ;; Size LXWXH = 1.437 0.56 X 0.11" ;; Packaging = Caseless ;; Frequency MHZ = 250-500 ;; Power Handling Watts = 200.

2SC5108FT : Bipolar Transistors. Vceo (V) = 10 ;; Ic (mA) = 30 ;; PC (mW) = 100 ;; Cob (pF) = 0.7 ;; Cre (pF) = 0.5 ;; .fT(Typ.) (GHz) = 6 ;; Package = Tesm ;; Application = VHF to UHF Osc.

4A4305 : Power Dividers. = Xinger In-phase Power Dividers ;; Size LXWXH = 0.87 X 0.48 X 0.081" ;; Packaging = Surface Mount ;; Frequency MHZ = 1500-2400 ;; Power Handling Watts =.

AM83135-040 : S-Band Radar Transistors. S-band Radar Applications RF & Microwave Transistors.

AP112-79 : GAAS ic GSM Power Amplifier. +3.5 V Operation Output Power to 35 dBm Efficiency Typically 55% Outstanding Efficiency vs. Supply Voltage High Power SSOP-16 Package with Slug Wide Power Control Range (50 dB) The is a low cost IC power amplifier designed for the 880­915 MHz frequency band. It 3 cell battery operation and high efficiency. The AP112-79 has external matching for improved.

EKIN2-220D : Modulators/Demodulators. Excellent Phase and Amplitude Balance LO Power +10 dBm Typical Surface Mount M/A-COM's is a passive, high performance surface mount Demodulator. It is ideally suited for IF demodulation in Cellular Base Stations. Typical system applications include GSM, DCS1800, W-CDMA and PCS. Parameter Frequency Range I/Q Phase Unbalance Isolation Conversion Loss.

LET19060C : Power. RF Power Transistors Ldmos Enhanced Technology. N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs IS-97 CDMA PERFORMANCES POUT 7.5 W EFF. = 18 EDGE PERFORMANCES POUT 30 W EFF. = 25 GSM PERFORMANCES POUT 65 W EFF. = 45 EXCELLENT THERMAL STABILITY BeO FREE PACKAGE INTERNAL INPUT/OUTPUT MATCHING ESD PROTECTION PIN CONNECTION The is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor.

MAAPGM0038 :  8.0-12.0 GHZ 1.2W Amplifier. 1.2 Watt Saturated Output Power Level 8.0-12.0 GHz Operation Variable Drain Voltage (4-10V) Operation Self-Aligned MSAG® MESFET Process Flange Mount Point-to-Point Radio Weather Radar Airborne Radar The is a packaged, 1.2 W power amplifier with on-chip bias networks. This product is fully matched to 50 ohms on both the input and output. It can be used.

MF1118V-3.0 : SAW (Surface Acoustic Wave) Devices. This SAW filter for the transmitting RF circuit of 1.5GHz PDC mobile communication equipment operating at 1429 MHz ~ 1453 MHz. 1. SMD package insures small size, lightweight. 2. Adjustment free. 3. Low insertion loss. 4. Wide and sharp passband characteristics. 5. High stability and reliability. 6. Designed for reflow solderings APPLICATION Mobile Cellular.

RI23110 : Pam For Cdma PCS (1720 1910 MHz). The RI23110 Personal Communications Service (PCS) Power Amplifier is a fully matched 6-pin LCC surface mount module developed for PCS and wireless local loop applications. This small and efficient Power Amplifier packs a full 1720­1910 MHz bandwidth coverage into a single compact package. This device meets the stringent spectral linearity requirements.

SGA-4163 : DC-6000 MHZ Silicon Germanium HBT Cascadable Gain Block. Sirenza Microdevices is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high F T and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation.

SGA-4486 : DC-2000 MHZ Silicon Germanium HBT Cascadable Gain Block. Sirenza Microdevices is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring 1 micron emitters provides high F T and excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation.

TIM1213-4L : X, Ku-Band Power GaAs IMFETs. Frequency Band (GHz) = 12.7-13.2 ;; P1dB (dBm) = 36.5 ;; G1dB (dB) = 7.5 ;; P.A.E. (%) Typ. = 24 ;; VDS (V) = 9 ;; Ids (A) Typ. = 1.7 ;; IM3 (dBc) Typ. = -45 ;; RTH ( C/W) Typ. = 2.9.

TX5003 : Frequency = 303.825 ;; = Hybrid Transmitter. Designed for Short-Range Wireless Data Communications Supports RF Data Transmission Rates to 115.2 kbps 3 V, Low Current Operation plus Sleep Mode Stable, Easy to Use, Low External Parts Count The TX5003 hybrid transmitter is ideal for short-range wireless data applications where robust operation, small size, low power consumption and low cost are required.

MAX9995 : Dual, SiGe, High-Linearity, 1700MHz to 2200MHz Downconversion Mixer with LO Buffer/Switch The MAX9995 dual, high-linearity, downconversion mixer provides 6.1dB gain, +25.6dBm IIP3, and 9.8dB NF for UMTS/WCDMA, DCS, and PCS base-station applications. The MAX9995 is ideal for low-side LO injection. (For a mixer variant optimized for high-side LO injection,.

SKY65015 : InGaP Cascadable Amplifier ● Broadband: LF–6 GHz ● Small signal gain: 18 dB typ. @ 2 GHz ● High output 3rd order intercept: +35 dBm typ. ● 0P1 dB: +18 dBm typ. @ 2 GHz ● Input and output impedance: 50 Ω nominal ● Single, positive DC supply voltage ● Miniature SC-88 package ● Available lead (Pb)-free.

CC1110F16 : Sub-1GHz System-on-Chip with MCU and 16kB Flash memory The CC1110Fx/CC1111Fx is a true low-power sub-1 GHz system-on-chip (SoC) designed for low-power wireless applications. The CC1110Fx/CC1111Fx combines the excellent performance of the state-of-the-art RF transceiver CC1101 with an industry-standard enhanced 8051 MCU, up to 32 kB of in-system programmable.

LET9045C : LDMOS 28 V HF/VHF/UHF/900 MHz & Avionics Applications RF power transistor the LdmoST family.

MAX2769B : High-Performance, Automotive Grade GPS, GLONASS, Galileo, And Compass RF Receiver The MAX2769B is a next-generation Global Navigation Satellite System (GNSS) receiver covering GPS, GLONASS, Galileo, and Compass navigation satellite systems on a single chip. This single-conversion GNSS receiver is designed to provide high performance for industrial and automotive.

 
0-C     D-L     M-R     S-Z