Details, datasheet, quote on part number: SW65-0314
CategoryRF & Microwaves => Switches
DescriptionDC-3 Ghz, GAAS SP4T Absorptive Switch With Asic Driver
CompanyM/A-COM, Inc.
DatasheetDownload SW65-0314 datasheet
Find where to buy


Features, Applications
GaAs SP4T Absorptive Switch with ASIC Driver, - 3.0 GHz

Typical Isolation: dB (2,000 MHz) Typical Insertion Loss: dB (2,000 MHz) Integral ASIC TTL/CMOS Driver Plastic, 50 mil Pitch, SOW-24 Lead, Wide Body Low DC Power Consumption 50 Ohm Nominal Impedance Tape and Reel Packaging Available Test Boards Available


M/A-COM's is a GaAs MMIC absorptive SP4T switch with an integral silicon ASIC driver. This device a 24-lead plastic package. This switch offers excellent broadband performance and repeatability from to 3 GHz, while maintaining low DC power dissipation. The SW65-0314 is ideally suited for wireless infrastructure applications. Also available in a ceramic package with improved performance.

Trise Tfall Ton Toff Transients 1 dB Compression Input IP3 VCC VEE ICC IEE Logic "0" Logic "1"
1. Decoupling capacitors (.01 µF) are required on the power supply lines.
GaAs SP4T Absorptive Switch with ASIC Driver, - 3.0 GHz Absolute Maximum Ratings 2,3

Parameter Max. Input Power 0.05 GHz - 3.0 GHz Bias Voltages VEE VCC Control Voltage 4 Operating Temperature Storage Temperature Absolute Maximum +27 dBm +34 dBm -0.5V to VCC to +125°C

2. Operation of this device above any one of these parameters may cause permanent damage. 3. When the RF input is applied to the terminated port, the absolute maximum power is +30 dBm. 4. Standard CMOS TTL interface, latch-up will occur if logic signal is applied prior to power supply.

Part Number SW65-0314TR SW65-0314-TB Package Bulk Packaging Tape and Reel (1K Reel) Units Mounted on Test Board

M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. Visit for additional data sheets and product information.

2 n North America: Tel. 366-2266 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. 300 020


Related products with the same datasheet
Some Part number from the same manufacture M/A-COM, Inc.
SW65-0314-TB DC-3 Ghz, GAAS SP4T Absorptive Switch With Asic Driver
SW90-0001 DC-4 Ghz, GAAS SPST Switch, Absorptive, Single Supply
SW90-0002 DC-4 Ghz, GAAS SPDT Switch, Absorptive, Single Supply
SW90-0003 DC-4 Ghz, GAAS SP4T Switch, Absorptive, Single Supply
SW90-0004 DC-4 Ghz, GAAS SP6T Switch, Absorptive, Single Supply
SW90-0004A  GaAs SP6T Switch, Absorptive, Single Supply, DC - 4 GHZ
SW90-0004TR DC-4 Ghz, GAAS SP6T Switch, Absorptive, Single Supply
SWD-109 Single/quad Driver For GAAS Fet Switche And Attenuator
SWD-109PIN Single/quad Drivers For GAAS Fet Switches And Attenuators
SWD-109RTR Single/quad Driver For GAAS Fet Switche And Attenuator
SWD-119PIN Single/quad Drivers For GAAS Fet Switches And Attenuators
SWD-119RTR Single/quad Driver For GAAS Fet Switche And Attenuator
T-1000  Two-Way Power Splitter/Combiner, 10 - 1000MHz
THV-50  Two-Way Power Splitter/Combiner, 2 - 200MHz
TP-101  RF Pulse Transformer, 500 KHZ - 1.5 GHZ
TP-102  RF Pulse Transformer, 1 - 500 MHZ
TP-103  RF Pulse Transformer, 500 KHZ - 1 GHZ
TP-104  RF Pulse Transformer, 750 KHZ - 400 MHZ
TP-105  RF Pulse Transformer

MA40264 : RF/microwave Diodes 3 Ghz, Schottky Detector Diode

MA44641D93 : 20 GHz, SILICON, STEP RECOVERY DIODE Specifications: Configuration: Single ; Diode Applications: FREQUENCY MULTIPLIER ; Pin Count: 1 ; Number of Diodes: 1 ; VBR: 40 volts ; CT: 0.4000 to 0.6000 pF


MA4E978H-270 : SILICON, HIGH BARRIER SCHOTTKY, C-X BAND, MIXER DIODE Specifications: Arrangement: Common Catode ; Diode Type: MIXER DIODE ; Diode Applications: Mixer ; Package: BEAM LEAD PACKAGE-3 ; Pin Count: 3 ; Number of Diodes: 2

MA4L022-30 : SILICON, PIN DIODE Specifications: Package: ROHS COMPLIANT, CERAMIC, CASE 1056, 2 PIN ; Number of Diodes: 1 ; RoHS Compliant: RoHS


MLA2568-101A2 : 17500 MHz - 19500 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER Specifications: Amplifier Type: Power Amplifier ; Applications: RF Microwave ; Frequency Range: 17500 to 19500 MHz ; Input VSWR: 1.8 1 ; Output VSWR: 1.8 1 ; Operating Temperature: -55 to 95 C (-67 to 203 F)

MLM6518-102D : 500 MHz - 18000 MHz RF/MICROWAVE SGL POLE SGL THROW SWITCH, 2.2 dB INSERTION LOSS Specifications: Frequency Range: 500 to 18000 MHz ; Insertion Loss: 2.2 dB ; VSWR: 1.9 1 ; Type: Single Pole Single Throw ; Operating Temperature: -55 to 85 C (-67 to 185 F)

2608-09-IRL : 8000 MHz - 12000 MHz RF/MICROWAVE DOUBLE BALANCED MIXER, 8 dB CONVERSION LOSS-MAX Specifications: RF: 8000 to 12000 MHz ; Conversion Loss: 8 dB ; Mixer Type: Double Balanced ; Operating Temperature: -55 to 100 C (-67 to 212 F)

Same catergory

1P603 : = Pico Xinger Hybrid Couplers ;; Size LXWXH = 0.250" X 0.200" X 0.054" ;; Packaging = Surface Mount ;; Frequency MHZ = 2300-2700 ;; Power Handling Watts = 25.

854651 : = Filter - STD Low-loss ;; Frequency (MHz) = 70 ;; Bandwidth (MHz) = 0.5 ;; Insertion Loss (dB) = 8.0 Max ;; Modes of Operation = se ;; Package (mm) = 19.0 X 6.5.

854823 : = Filter - GSM BTS ;; Frequency (MHz) = 86.6 ;; Bandwidth (MHz) = 0.40 Min ;; Insertion Loss (dB) = 6.5 Max ;; Modes of Operation = SE, Bal ;; Package (mm) = 19.0 X 6.5.

FLC157XP : FET. High Output Power: = 31.5dBm (Typ.) High Gain: = 6.0dB(Typ.) High PAE: add = 29.5%(Typ.) Proven Reliability The FLC157XP chip is a power GaAs FET that is designed for general purpose applications in the C-Band frequency range as it provides superior power, gain, and efficiency. Fujitsu's stringent Quality Assurance Program assures the highest reliability.

LTC4402-1 : Multiband RF Power Controllers For Edge/tdmathe LTC4402-2 is a Multiband RF Power Controller For RF Power Amplifiers Operating in The 300MHz to 2.4GHz Range. supports am Modulation in Edge/tdma (ANSI-136) Applications Single Output RF Power Amplifier Control (LTC4402-1) Dual Output RF Power Amplifier Control (LTC4402-2) Internal Schottky Diode Detector.

MRFG35010MT1 : Power GaAs Transistors. MRFG35010MT1 3.5 Ghz, 9 W, 12 V Power Fet GAAS Phemt.

P35-4232 : DC-6GHz Reflective SPDT. The is a high power Gallium Arsenide single pole double throw broadband RF switch MMIC. It is suitable for use in broadband communications and instrumentation applications. A high impedance reflective termination is presented at the isolated output of the switch. Control is effected by the application of complimentary or 0/-8V signals to the control.

P35-5142 : Hemt Mmic Broadband Amplifier, < 0.5 - 40GHz. The is a high performance - 40GHz Gallium Arsenide monolithic travelling wave broadband amplifier. The broadband amplifier is especially suited for use as a gain block in communications systems operating at electrical data rates 40Gb/s (OC768/STM-256). The circuit is DC coupled at the RF input and output, off-chip decoupling capacitors on the bias lines.

SY88883V : 3.3V/5V 3.2Gbps CML Low-power Limiting Post Amplifier W/ttl SD The SY88883V Low-power, Limiting Post Amplifier is Designed For Use in Fiber Optic Receivers. The Device Connects to Typical Transimpedance Amplifiers (TIAs). The Linear Signal Output From Tias CAN Contain Significant Amounts of Noise And May Vary in Amplitude Over Time. The SY88883V Quantizes.

T7S0750A : Phase Control SCR ( 750 Amperes Average 1600 Volts ).

TMXP463 : IF SAW Filter. FC (MHz) = 190.0 ;; Min B (dB) = -3.0 ;; Min B (MHz) = 4.2 ;; Max B (dB) = -26.0 ;; Max B (MHz) = 20.0 ;; Typical il (dB) = 7.5 ;; Package (mm2) = 3.8x3.8 ;; Configuration Input/output = Null ;; Application = Wcdma RX ;; = Subscriber ;; = 3G ;; =.

TQ5132 : = 869-894 MHZ Cellular Cdma/amps Rfa/mixer ;; Gain (dB) = 15 ;; NF (dB) = 4.5 ;; IIP3 (dBm) = +2.5.

HMC517LC4 : 17 - 26 GHz, 19dB Gain, +13dBm P1dB, 2.5dB NF GaAs PHEMT MMIC Low Noise Amplifi er (LNA) housed in a leadless “Pb free” RoHS compliant SMT package. The HMC517LC4 provides 19 dB of small signal gain, 2.5 dB of noise fi gure and has an output IP3 of +23 dBm. The P1dB output power of +13 dBm enables the LNA to also function as a LO driver for balanced,.

HMC-C004 : 10 MHz - 20 GHz, 16dB Gain, +23dBm P1dB, 3dB NF The HMC-C004 is a GaAs MMIC PHEMT Distributed Driver Amplifi er in a miniature, hermetic module with replaceable SMA connectors which operates between 10 MHz and 20 GHz. The self-biased amplifi er provides 15 dB of gain, 3 to 4 dB noise fi gure and +24 dBm of saturated output power while requiring a single.

HMC374 : 1.5dB NF, 15dB Gain, +37dBm OIP3, 50 Ohm I/Os. Typical Applications The HMC374E is ideal for: Cellular/PCS/3G WCS, MMDS & ISM Fixed Wireless & WLAN Private Land Mobie Radio Single Supply: Vdd to +5.5V Low Noise Figure: 1.5 dB High Output IP3: +37 dBm No External Matching Required The & HMC374E are general purpose broad band Low Noise Amplifiers (LNA) for use in the 0.3-3 GHz frequency range. The LNA provides.

HMC-APH518 : GaAs HEMT MMIC MEDIUM POWER AMPLIFIER The HMC-APH518 is a two stage GaAs HEMT MMIC Medium Power Amplii er which operates between 16 and 33 GHz. . All bond pads and the die backside are Ti/Au metallized and the amplii er device is fully passivated for reliable operation. All data Shown herein is measured with the chip in a 50 Ohm environment and contacted.

HMC611 : Logarithmic Detector Controller Chip, 0.001 - 10 GHz The HMC611 Logarithmic Detector/Controller generates a voltage that is proportional to the log of the RF power envelop presented to its input. The HMC611 employs a successive compression topology which delivers extremely high dynamic range and conversion accuracy over a wide input frequency range.

MAX19995 : Dual, SiGe, High-Linearity, 1700MHz To 2200MHz Downconversion Mixer With LO Buffer/Switch The MAX19995 dual-channel downconverter provides up to 9dB of conversion gain, +24.8dBm input IP3, +13.3dBm 1dB input compression point, and a noise figure as low as 9dB for 1700MHz to 2200MHz diversity receiver applications. With an optimized LO frequency range.

0-C     D-L     M-R     S-Z