Details, datasheet, quote on part number: SWD-109
PartSWD-109
CategoryDiscrete => Transistors => Bipolar => RF
DescriptionSingle/quad Driver For GAAS Fet Switche And Attenuator
CompanyM/A-COM, Inc.
DatasheetDownload SWD-109 datasheet
Quote
Find where to buy
 
  

 

Features, Applications

Features

! High Speed CMOS Technology ! Single Channel (SWD-109) ! Quad Channel (SWD-119) ! Positive Voltage Control ! Low Power Dissipation ! Low Cost Plastic SOIC Package

Description

The is a single channel driver used to translate TTL control inputs into gate control voltages for GaAs FET microwave switches and attenuators. High speed analog CMOS technology is utilized to achieve low power dissipation at moderate to high speeds, encompassing most microwave switching applications. The output HIGH level is optionally to +2.0V (relative to GND) to optimize the intermodulation products of the control devices at low frequencies. The is a quad channel driver with performance similar to the single channel version.

Symbol VCC VEE VOPT Parameter Positive DC Supply Voltage Negative DC Supply Voltage Optional DC Output Supply Voltage Output to Negative Supply Voltage Range Positive to Negative Supply Voltage Range DC Input Voltage DC Input Current DC Output Voltage DC Output Current Storage Temperature Min -9.0 -0.5 Max 0.5 2.0 Unit V

All voltages are referenced to GND. All inputs and outputs incorporate latch-up protection structures.

Single/Quad Drivers for GaAs FET Switches and Attenuators Guaranteed Operating Ranges

Parameter 1 Positive DC Supply Voltage Negative DC Supply Voltage Optional DC Output Supply Voltage Negative Supply Voltage Range Positive to negative Supply Range Operating Ambient temperature DC Output Current - High DC Output Current - Low Maximum Input Rise or Fall Time

1. All voltages are relative to GND. 2. VOPT is grounded for most applications. To improve the intermodulation performance and the 1 dB compression point of GaAs control devices at low frequencies, VOPT can be increased to between 1.0 and 2.0V. The nonlinear characteristics of the GaAs control devices will approximate performance at 500 MHz. It should be noted that the control current is on the GaAs MMICs will increase when positive controls are applied.

Symbol VIH VIL VIH VOL IIN ICC Parameter Input High Voltage Input Low Voltage Output High Voltage Output Low Voltage Input Leakage Current Quiescent Supply Current Test Conditions Guaranteed High Input Voltage Guaranteed Low Input Voltage IOH -1 mA IOL 1 mA VIN = VCC or GND VCC = Max VOPT = Min or Max VCC= Max VEE = Max VEE = Max VEE = Min VEE = Min VIN = VCC or GND VIN = VCC -2.1V Units A Min. 2.0 VOPT -0.1 -1.0 Typ. 0 Max. 0.8 VEE 1.0 100

Specifications subject to change without notice. ! North America: Tel. 366-2266 ! Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 ! Europe: Tel. 300 020

Visit www.macom.com for additional data sheets and product information.
Input C1 Logic "0" Logic "1" A VEE VOPT Outputs B VOPT VEE
Pin No. Function Output A GND Vcc C1, Logic Pin No. Function Vee Vopt GND Output B
Input Capacitance Power Dissipation Capacitance Power Dissipation Capacitance

3. VCC = 4.5V, VEE = -4.5V, VOPT = 25 pF, Trise, Tfall = 6ns. These conditions represent the worst case for slow delays. 4. Total Power Dissipation is calculated by the following formula: PD = VCC 2fC PDC + (VOPT-VEE) 2fCPDE

Specifications subject to change without notice. ! North America: Tel. 366-2266 ! Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 ! Europe: Tel. 300 020


 

Related products with the same datasheet
SWD-109RTR
SWD-109TR
Some Part number from the same manufacture M/A-COM, Inc.
SWD-109PIN Single/quad Drivers For GAAS Fet Switches And Attenuators
SWD-109RTR Single/quad Driver For GAAS Fet Switche And Attenuator
SWD-119
SWD-119PIN Single/quad Drivers For GAAS Fet Switches And Attenuators
SWD-119RTR Single/quad Driver For GAAS Fet Switche And Attenuator
T-1000  Two-Way Power Splitter/Combiner, 10 - 1000MHz
THV-50  Two-Way Power Splitter/Combiner, 2 - 200MHz
TP-101  RF Pulse Transformer, 500 KHZ - 1.5 GHZ
TP-102  RF Pulse Transformer, 1 - 500 MHZ
TP-103  RF Pulse Transformer, 500 KHZ - 1 GHZ
TP-104  RF Pulse Transformer, 750 KHZ - 400 MHZ
TP-105  RF Pulse Transformer
TP-108  RF Transformer, 350 - 1125 MHZ
TP-75  50/75-Ohm Transformer
TP-75N 50/75-ohm Transformer 2 - 200 MHZ
TP-75SMA  50/75-Ohm Transformer
TPX-75-4
TPX-75-4N 50/75-ohm Transformer 10 - 1500 MHZ
TU-50  Two-Way Power Splitter/Combiner, 2 - 200MHz
TU-50BNC Two-way Power Dividers 2 - 200 MHZ And 20 - 400 MHZ
TU-50N  Two-Way Power Splitter/Combiner, 2 - 200MHz
Same catergory

6F10 : 100V 6A Std. Recovery Diode in a DO-203AA (DO-4)package. High surge current capability Avalanche types available Stud cathode and stud anode version Wide current range Types to 1200V VRRM Battery charges Converters Power supplies Machine tool controls Type number Voltage Code VRRM, maximum repetitive peak reverse voltage V VRSM, maximum nonrepetitive peak reverse voltage V (1) Avalanche version only available.

AP0132NB : 8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode.

BA3960 : Dual Circuit, Variable Output Voltage Regulator. Dual circuit, variable output voltage regulator The is a dual circuit, variable output, series regulator. PNP output transistors allow minimum voltage differential between input and output. Each of the two circuits can be turned on or off independently by using the system logic control. When both circuits are off, the IC keeps a standby state with no supply.

BD546 : PNP Silicon Power Transistors. Designed for Complementary Use with the BD545 Series at 25C Case Temperature 15 A Continuous Collector Current Customer-Specified Selections Available absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING BD546 Collector-base voltage (IE BD546C BD546 Collector-emitter voltage (IB = 0) (see Note BD546B BD546C Emitter-base.

IRKC166/04 : 400V Common Cathode in a Int-a-pak Package. STANDARD RECOVERY DIODES NEW INT-A-pak Power Modules High Voltage Electrically Isolated by DBC Ceramic 3500 V RMS Isolating Voltage Industrial Standard Package High Surge Capability Glass Passivated Chips Modules uses High Voltage Power diodes in four Basic Configurations Simple Mounting UL E78996 approved Applications DC Motor Control and Drives Battery.

RL201-B : 2.0A,50V,STD,DO-15. Low cost Low leakage Low forward voltage drop High current capability Case: Molded plastic Epoxy: Device has UL flammability classification 94V-O Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.38 gram Ratings o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive.

STP60NE06L-16 : Low Voltage. N-channel 60V - 0.014 Ohm - 60A TO-220/TO220FP StripFET Power MOSFET.

STW20NM50 : Medium Voltage. N-channel 500V - 0.20 Ohm - 20A TO-247 Mdmesh Power MOSFET.

05002470CKZB : CAPACITOR, CERAMIC, MULTILAYER, 200 V, BP, 0.000047 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Dielectric: Ceramic Composition ; Capacitance Range: 4.70E-5 microF ; Capacitance Tolerance: 10 (+/- %) ; WVDC: 200 volts ; Temperature Coefficient: 30 ppm/°C ; Mounting Style: Surface Mount Technology.

B82478A1103M000 : 1 ELEMENT, 10 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD. s: Mounting Option: Surface Mount Technology ; Devices in Package: 1 ; Core Material: Ferrite ; Lead Style: WRAPAROUND ; Standards and Certifications: RoHS ; Application: General Purpose, Power Choke ; Inductance Range: 10 microH ; Inductance Tolerance: 20 (+/- %) ; DCR: 0.0600.

EPB5035G-RC : DATACOM TRANSFORMER FOR GENERAL PURPOSE APPLICATION(S). s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers, DATACOM TRANSFORMER ; Mounting: Chip Transformer ; Operating Temperature: -40 to 85 C (-40 to 185 F) ; Standards: RoHS.

R2001 : DATACOM TRANSFORMER FOR TOKEN RING APPLICATION(S). s: Category: Signal ; Other Transformer Types / Applications: Pulse Transformers, DATACOM TRANSFORMER ; Mounting: Chip Transformer ; Operating Temperature: 0 to 70 C (32 to 158 F).

RF05VA2S : 0.5 A, 200 V, SILICON, SIGNAL DIODE. s: Package: TUMD2, 2 PIN ; Number of Diodes: 1 ; IF: 500 mA.

SP210.10.01LF : RES,AXIAL,WIREWOUND,100M OHMS,300WV,.01% +/-TOL,-90,90PPM TC. s: Category / Application: General Use ; Technology / Construction: Wirewound.

TS6X104KT20 : RES,TAPPED,CERMET,100K OHMS,158WVDC,10% +/-TOL,-100,100PPM TC,2727 CASE. s: Potentiometer Type: Trimmer.

10P8 : RESISTOR, NETWORK, FILM, BUSSED; JUMPER, 0.03125 W, SURFACE MOUNT. s: Configuration: Chip Array ; Category / Application: General Use ; Technology / Construction: Thick Film (Chip) ; Mounting / Packaging: Surface Mount Technology (SMT / SMD), CHIP, ROHS COMPLIANT ; Operating DC Voltage: 25 volts ; Operating Temperature: -55 to 155 C (-67 to 311 F).

138D108X0006T0 : CAPACITOR, TANTALUM, NON SOLID, POLARIZED, 6 V, 1000 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Applications: General Purpose ; Electrolytic Capacitors: Tantalum ; : Polarized ; Capacitance Range: 1000 microF ; Capacitance Tolerance: 20 (+/- %) ; WVDC: 6 volts ; Mounting Style: Through Hole ; Operating Temperature: -55 to 85 C (-67.

 
0-C     D-L     M-R     S-Z