Details, datasheet, quote on part number: SWD-119
CategoryDiscrete => Transistors => Bipolar => RF
DescriptionSingle/quad Driver For GAAS Fet Switche And Attenuator
CompanyM/A-COM, Inc.
DatasheetDownload SWD-119 datasheet
Find where to buy


Features, Applications


! High Speed CMOS Technology ! Single Channel (SWD-109) ! Quad Channel (SWD-119) ! Positive Voltage Control ! Low Power Dissipation ! Low Cost Plastic SOIC Package


The is a single channel driver used to translate TTL control inputs into gate control voltages for GaAs FET microwave switches and attenuators. High speed analog CMOS technology is utilized to achieve low power dissipation at moderate to high speeds, encompassing most microwave switching applications. The output HIGH level is optionally to +2.0V (relative to GND) to optimize the intermodulation products of the control devices at low frequencies. The is a quad channel driver with performance similar to the single channel version.

Symbol VCC VEE VOPT Parameter Positive DC Supply Voltage Negative DC Supply Voltage Optional DC Output Supply Voltage Output to Negative Supply Voltage Range Positive to Negative Supply Voltage Range DC Input Voltage DC Input Current DC Output Voltage DC Output Current Storage Temperature Min -9.0 -0.5 Max 0.5 2.0 Unit V

All voltages are referenced to GND. All inputs and outputs incorporate latch-up protection structures.

Single/Quad Drivers for GaAs FET Switches and Attenuators Guaranteed Operating Ranges

Parameter 1 Positive DC Supply Voltage Negative DC Supply Voltage Optional DC Output Supply Voltage Negative Supply Voltage Range Positive to negative Supply Range Operating Ambient temperature DC Output Current - High DC Output Current - Low Maximum Input Rise or Fall Time

1. All voltages are relative to GND. 2. VOPT is grounded for most applications. To improve the intermodulation performance and the 1 dB compression point of GaAs control devices at low frequencies, VOPT can be increased to between 1.0 and 2.0V. The nonlinear characteristics of the GaAs control devices will approximate performance at 500 MHz. It should be noted that the control current is on the GaAs MMICs will increase when positive controls are applied.

Symbol VIH VIL VIH VOL IIN ICC Parameter Input High Voltage Input Low Voltage Output High Voltage Output Low Voltage Input Leakage Current Quiescent Supply Current Test Conditions Guaranteed High Input Voltage Guaranteed Low Input Voltage IOH -1 mA IOL 1 mA VIN = VCC or GND VCC = Max VOPT = Min or Max VCC= Max VEE = Max VEE = Max VEE = Min VEE = Min VIN = VCC or GND VIN = VCC -2.1V Units ľA Min. 2.0 VOPT -0.1 -1.0 Typ. 0 Max. 0.8 VEE 1.0 100

Specifications subject to change without notice. ! North America: Tel. 366-2266 ! Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 ! Europe: Tel. 300 020

Visit for additional data sheets and product information.
Input C1 Logic "0" Logic "1" A VEE VOPT Outputs B VOPT VEE
Pin No. Function Output A GND Vcc C1, Logic Pin No. Function Vee Vopt GND Output B
Input Capacitance Power Dissipation Capacitance Power Dissipation Capacitance

3. VCC = 4.5V, VEE = -4.5V, VOPT = 25 pF, Trise, Tfall = 6ns. These conditions represent the worst case for slow delays. 4. Total Power Dissipation is calculated by the following formula: PD = VCC 2fC PDC + (VOPT-VEE) 2fCPDE

Specifications subject to change without notice. ! North America: Tel. 366-2266 ! Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 ! Europe: Tel. 300 020


Related products with the same datasheet
Some Part number from the same manufacture M/A-COM, Inc.
SWD-119PIN Single/quad Drivers For GAAS Fet Switches And Attenuators
SWD-119RTR Single/quad Driver For GAAS Fet Switche And Attenuator
T-1000  Two-Way Power Splitter/Combiner, 10 - 1000MHz
THV-50  Two-Way Power Splitter/Combiner, 2 - 200MHz
TP-101  RF Pulse Transformer, 500 KHZ - 1.5 GHZ
TP-102  RF Pulse Transformer, 1 - 500 MHZ
TP-103  RF Pulse Transformer, 500 KHZ - 1 GHZ
TP-104  RF Pulse Transformer, 750 KHZ - 400 MHZ
TP-105  RF Pulse Transformer
TP-108  RF Transformer, 350 - 1125 MHZ
TP-75  50/75-Ohm Transformer
TP-75N 50/75-ohm Transformer 2 - 200 MHZ
TP-75SMA  50/75-Ohm Transformer
TPX-75-4N 50/75-ohm Transformer 10 - 1500 MHZ
TU-50  Two-Way Power Splitter/Combiner, 2 - 200MHz
TU-50BNC Two-way Power Dividers 2 - 200 MHZ And 20 - 400 MHZ
TU-50N  Two-Way Power Splitter/Combiner, 2 - 200MHz
UF2805B 100-500 Mhz, 5 W, 28 V, RF MOSFET Power Transistor
UF28100H 100-500 Mhz, 100 W, 28 V, RF MOSFET Power Transistor
Same catergory

BC807 : BC807; PNP General Purpose Transistor;; Package: SOT23 (SST3). High current (max. 500 mA) Low voltage (max. 45 V). APPLICATIONS General purpose switching and amplification. PNP transistor a SOT23 plastic package. NPN complements: BC817. = p: Made in Hong Kong. = t: Made in Malaysia. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb.

CEM11C2 : Complementary N-P chanel. Complementary N-p Channel SO-8 Package. Dual Enhancement Mode Field Effect Transistor ( N and P Channel) RDS(ON)=120m @VGS=-2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface Mount Package. ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous C b -Pulsed.

GPTP2157 : . Phone: +39-010-659 1869 Fax: +39-010-659 1870 Web: E-mail: High reliability operation DC power supply AC drives VOLTAGE UP TO AVERAGE CURRENT SURGE CURRENT BLOCKING CHARACTERISTICS Characteristic VRRM VRSM VDRM IDRM IRRM Repetitive peak reverse voltage Non-repetitive peak reverse voltage Repetitive peak off-state voltage.

HER1607G : Glass Passivated. Pakage = TO-220 ;; Max. Reverse Voltage VRM (V)= 800 ;; Max. Aver. Rect. Current io (A)= 16 ;; Ifsm (A)= 125.

KSC1520 : NPN ( Color TV Chroma Output ).

M80C286 : High Performance Chmos Microprocessor With Memory Management And Protection.

PBSS5230T : 30 V; 2 a PNP Low V_cesat (BISS) Transistor Low Collector-emitter Saturation Voltage Vcesat High Collector Current Capability: ic And Icm Higher Efficiency Leading to Less Heat Generation Reduced Printed-circuit Board Requirements Cost Effective Alternative to MOSFETs in Specific Applications. Applications Power Management DC/DC Converters Supply Line.

BLF4G20LS-130 : UHF power LDMOS transistor 130 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling..

SD3932 : Transistors, Radio Frequency RF power transistors HF/VHF/UHF N-channel MOSFETs.

03028-BX272ZJZ-P : CAPACITOR, CERAMIC, MULTILAYER, 25 V, BX, 0.0027 uF, SURFACE MOUNT, 0603. s: Configuration / Form Factor: Chip Capacitor ; Technology: Multilayer ; Applications: General Purpose ; Electrostatic Capacitors: Ceramic Composition ; Capacitance Range: 0.0027 microF ; Capacitance Tolerance: 5 (+/- %) ; WVDC: 25 volts ; Mounting Style: Surface Mount Technology.

FM0H224Z : CAPACITOR, ELECTRIC DOUBLE LAYER, 5.5 V, 220000 uF, THROUGH HOLE MOUNT. s: Configuration / Form Factor: Leaded Capacitor ; Technology: ELECTRIC DOUBLE LAYER ; Applications: General Purpose ; RoHS Compliant: Yes ; Capacitance Range: 220000 microF ; Capacitance Tolerance: 80 (+/- %) ; WVDC: 5.5 volts ; Mounting Style: Through Hole ; Operating Temperature:.

FMR1 : RESISTOR, FUSIBLE, FILM, 1 W, 5; 10 %, 350; 500 ppm, 0.1 ohm - 10000 ohm, THROUGH HOLE MOUNT. s: Category / Application: Fusible Resistor, General Use ; Mounting / Packaging: ThroughHole, Axial Leads, AXIAL LEADED ; Operating DC Voltage: 300 volts ; Operating Temperature: -25 to 200 C (-13 to 392 F).



UNR2114Q : 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR. s: Polarity: PNP ; Package Type: MINI3-G1, SC-59, 3 PIN.

1102VAMA070LTN110 : CAP,AL2O3,1MF,400VDC,20% -TOL,20% +TOL. xmJy IJJJ mJy IJJJ P_Z^N L_QX S XM _UM^QO O M\ UM^QO Z^M ^QRdM [ XMQT T w NZS MX W _^Nz S O VPS Rd U_z M^NZUUT O MT MV_\ \ ZRS VQO S _R QRX _O PM^MT MVO ^_RS V U^_XZVO N O M\ aQO cS Rd e_T O QdM aQRdM f UM^ S Rd gM\ UM^ Z^ M aQRdM h S RQT` QUQVSO QRVM aQRdM ` QUQVS O QRVM g_T M^ QRVM mJe} ` ~ mJJe} ~ l mJy ]M^ W \ QRVM ` PQ^ QVO S VN mJe} ` ~ yJe} ~ l mJy spIJ.

2N3806A : 50 mA, 60 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-99. s: Polarity: PNP ; Package Type: TO-99, 6 PIN.

0-C     D-L     M-R     S-Z