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Part: MAX1841EUB
Category:
Power Management
-> Battery Management
Description: MAX1840, MAX1841 Low-voltage Sim/smart-card Level Translators in µMAX
Company: Maxim Integrated Products
Datasheet: Download MAX1841EUB datasheet File size : 505 kB
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Datasheet text preview:
19-1716; Rev 0; 4/00
Low-Voltage SIM/Smart Card Level Translators in µMAX
General Description
T h e MAX1840/MAX1841 subscriber identity module (SIM)/smart card level translators provide level shifting and electrostatic discharge (ESD) protection for SIM and smart card ports. These devices integrate two unidirectional level shifters for the reset and clock signals, a bidirectional level shifter for the serial data stream, and ±10kV ESD protection on all card contacts. The MAX1840 includes a SHDN control input to aid insertion and removal of SIM and smart cards, while the MAX1841 includes a system-side data driver to support system controllers without open-drain outputs. The logic supply voltage range is +1.4V to +5.5V for the "controller side" and +1.7V to +5.5V for the "card side." Total supply current is 1.0µA. Both devices automatically shut down when either power supply is removed. For a comp l e t e SIM card interface, combine the MAX1840/ M A X 1 8 4 1 with the MAX1686H 0V/3V/5V regulated charge pump. T h e MAX1840/MAX1841 are available in ultra-small 10-pin µMAX packages that are only 1.09mm high and half the area of an 8-pin SO. The MAX1840/MAX1841 are compliant with GSM test specifications 11.11 and 11.12. o SIM/Smart Card Level Shifting o +1.4V to +5.5V Controller Voltage Range o +1.7V to +5.5V Card Voltage Range o ±10kV ESD Card Socket Protection o Allows Level Translation with DVCC VCC or DVCC VCC o Automatically Shuts Down When Either Supply Is Removed o Card Contacts Actively Pulled Low During Shutdown o 1µA Total Quiescent Supply Current o 0.01µA Total Shutdown Supply Current o Ultra-Small 10-Pin µMAX Package o Compliant with GSM Test Specifications 11.11 and 11.12
Features
MAX1840/MAX1841
Applications
SIM Interface in GSM Cellular Telephones Smart Card Readers Logic Level Translation SPITM/QSPITM/MICROWIRETM Level Translation
PART MAX1840EUB MAX1841EUB
Ordering Information
TEMP. RANGE -40°C to +85°C -40°C to +85°C PIN-PACKAGE 10 µMAX 10 µMAX
Typical Operating Circuit
DVCC DVCC DVCC RIN SYSTEM CONTROLLER VCC RST VCC VCC RST SIM OR SMART CARD
Pin Configuration
TOP VIEW
DATA DVCC CIN RIN SHDN (DDRV) 1 2 3 4 5 10 IO 9 VCC CLK RST GND
MAX1840 MAX1841
CIN DATA OPTIONAL OPTIONAL SHDN* DDRV* IO GND IO CLK CLK
MAX1840 MAX1841
8 7 6
µMAX
( ) ARE FOR MAX1841.
GND
GND * SHDN FOR MAX1840 ONLY; DDRV FOR MAX1841 ONLY.
SPI and QSPI are trademarks of Motorola, Inc. MICROWIRE is a trademark of National Semiconductor Corp. 1
________________________________________________________________ Maxim Integrated Products
For free samples and the latest literature, visit www.maxim-ic.com or phone 1-800-998-8800. For small orders, phone 1-800-835-8769.
Low-Voltage SIM/Smart Card Level Translators in µMAX MAX1840/MAX1841
ABSOLUTE MAXIMUM RATINGS
DVCC, VCC to GND......-0.3V to +6.0V RIN, CIN, DATA, DDRV, SHDN to GND .....-0.3V to (DVCC + 0.3V) RST, CLK, IO to GND .........-0.3V to (VCC + 0.3V) Continuous Power Dissipation (TA = +70°C) 10-Pin µMAX (derate 5.6mW/°C above +70°C) ..444mW Operating Temperature Range ...-40°C to +85°C Storage Temperature Range .....-65°C to +150°C Junction Temperature ......+150°C Lead Temperature (soldering, 10s) .........+300°C
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(Figure 1, DVCC = +1.8V; VCC = +1.8V, +3.0V, or +5.0V; SHDN = DVCC, CIN = RIN = GND or DVCC, IO = VCC, DATA = DDRV = DVCC, CIO = CCLK = CRST = CDATA = 30pF, TA = -40°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.) (Note1) PARAMETER POWER SUPPLIES DVCC Operating Range VCC Operating Range DVCC VCC CIN static DVCC Operating Current IDVCC CIN clocked at 1.625MHz from GND to DVCC with 50% duty cycle CIN clocked at 3.25MHz from GND to DVCC with 50% duty cycle CIN static VCC Operating Current IVCC CIN clocked at 1.625MHz from GND to DVCC with 50% duty cycle CIN clocked at 3.25MHz from GND to DVCC with 50% duty cycle Total Shutdown Current ISHDN IOFF = IVCC + IDVCC, SHDN = GND (MAX1840 only), or DVCC = GND or VCC = GND 0.2 DVCC 0.7 DVCC 0.01 VOL VOH ISINK = 200µA ISOURCE = 20µA ISOURCE = 200µA Between DATA and DVCC (Note 2) (Note 3) VCC = 5.0V 0.9 VCC 0.8 VCC 13 0.3 DVCC - 0.6 1 2 20 28 1 0.4 1.4 1.7 0.1 2.5 5 0.9 0.4 mA 0.8 3.0 µA 5.5 5.5 0.5 µA V V SYMBOL CONDITIONS MIN TYP MAX UNITS
0.01
1
µA
CIN, RIN, SHDN, DDRV LOGIC INPUTS Digital Input Low Threshold Digital Input High Threshold Input Leakage Current CLK, RST OUTPUTS Digital Output Low Level Digital Output High Level DATA INPUT/OUTPUT DATA Pullup Resistance Input Low Threshold Input High Threshold Input Low Current Input High Current 2 RDATA VIL(DATA) VIH(DATA) IIL IIH k V V mA µA V V VIL VIH V V µA
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Low-Voltage SIM/Smart Card Level Translators in µMAX
ELECTRICAL CHARACTERISTICS (continued)
(Figure 1, DVCC = +1.8V; VCC = +1.8V, +3.0V, or +5.0V; SHDN = DVCC, CIN = RIN = GND or DVCC, IO = VCC, DATA = DDRV = DVCC, CIO = CCLK = CRST = CDATA = 30pF, TA = -40°C to +85°C, unless otherwise noted. Typical values are at TA = +25°C.) (Note1) PARAMETER Output Low Level Output High Level IO (INPUT/OUTPUT) IO Pullup Resistance Input Low Threshold Input High Threshold Input Low Current Input High Current Output Low Level Output High Level SHUTDOWN OUTPUT LEVELS ISINK = 200µA, SHDN = GND, DATA = CIN = RIN = DVCC (MAX1840 only) Shutdown Output Levels (IO, CLK, RST) ISINK = 200µA, DVCC = GND, SHDN (MAX1840) = DDRV (MAX1841) = DATA = CIN = RIN = DVCC ISINK = 200µA, VCC = GND, SHDN (MAX1840) = DDRV (MAX1841) = DATA = CIN = RIN = DVCC TIMING Maximum CLK Frequency (Notes 4, 5) Note 1: Note 2: Note 3: Note 4: Note 5: VCC = 2.7V to 5.5V, DVCC = 1.4V to 2.7V fCLK VCC = 1.7V to 3.6V, DVCC = 1.4V to 2.25V 5 15 5 20 MHz 0.4 V RIO VIL(IO) VIH(IO) IIL IIH VOL(IO) VOH(IO) DATA = GND or DDRV = GND, ISINK = 200µA ISOURCE = 20µA 0.8 VCC Between IO and VCC IIL(MAX) = 1mA (Note 2) IIH(MAX) = ±20µA (Note 3) 6.5 0.3 0.7 VCC 1 20 0.4 10 14 k V V mA µA V V SYMBOL VOL(DATA) VOH(DATA) CONDITIONS IO = GND, ISINK = 100µA DVCC = 3.0V, IO = GND, ISINK = 200µA ISOURCE = 10µA DVCC = 3.0V, ISOURCE = 20µA 0.7 DVCC 0.7 DVCC MIN TYP MAX 0.4 0.4 UNITS V V
MAX1840/MAX1841
0.4
V
0.4
V
Specifications to -40°C are guaranteed by design, not production tested. VIL is defined as the voltage at which the output (DATA/IO) voltage equals 0.5V. VIH is defined as the voltage at which the output (DATA/IO) voltage exceeds the input (IO/DATA) voltage by 100mV. Timing specifications are guaranteed by design, not production tested. The maximum CLK frequency is defined as the output duty cycle remaining in the 40% to 60% range when the 50% CIN is applied. CIN has 5ns rise and fall times; levels are GND to DVCC. Input and output levels are measured at 50% of the waveform.
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