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Details, datasheet, quote on part number:28C011TRT2FB20
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Datasheet text preview:
1 Megabit (128K x 8-Bit) EEPROM
VCC VSS RES OE CE WE RES A0 A6 Address Buffer and Latch Y Decoder Y Gating I/O Buffer and Input Latch Control Logic Timing High Voltage Generator I/O0 I/O7 RDY/Busy
28C011T
A7 A16
X Decoder
Memory Array
Data Latch
Memory
Logic Diagram
FEATURES:
· 128k x 8-bit EEPROM · RAD-PAK® radiation hardened against natural space radiation · Total dose hardness: - > 100 krad (Si), depending upon space mission · Excellent Single Event Effects: - No Latchup > 120 MeV/mg/cm2 - SEU > 90 MeV/mg/cm2 read mode · P ackage: - 32-pin RAD-PAK® flat pack package - 32-pin Rad-Tolerant flat pack package - JEDEC-approved byte-wide pinout · High speed: - 120, 150, and 200 ns maximum access times available · High endurance: - 10,000 cycles/byte, 10-year data retention · Page write mode: - 1 to 128 byte page · Low power dissipation - 20 mW/MHz active (typical) - 110 µW standby (maximum) · Screening per TM 5004 · QCI per TM5005
DESCRIPTION:
Maxwell Technologies' 28C011T high-density 1 Megabit (128K x 8-Bit) EEPROM microcircuit features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. The 28C011T is capable of in-system electrical byte and page programmability. It has a 128-byte page programming function to make its erase and write operations faster. It also features Data Polling and a Ready / Busy signal to indicate the completion of erase and programming operations. In the 28C011T, hardware data protection is provided with the RES pin, in addition to noise protection on the WE signal and write inhibit on power on and off. Software data protection is implemented using the JEDEC optional standard algorithm.
Maxwell Technologies' patented RAD-PAK® packaging technology incorporates radiation shielding in the microcircuit package. It eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or space mission. In a GEO orbit, RAD-PAK provides greater than 100 krad (Si) radiation dose tolerance. This product is available with screening up to Class S.
08.20.02 REV 9
All data sheets are subject to change without notice
1
(858) 503-3300- Fax: (858) 503-3301- www.maxwell.com
©2002 Maxwell Technologies All rights reserved.
1 Megabit (128K x 8-Bit) EEPROM
TABLE 1. 28C011T PINOUT DESCRIPTION
PI N 12-4, 27, 26, 23, 25, 4,28, 3, 31, 2 13-21 24 22 29 32 16 1 30 SYMBOL A0-A16 I/O 0 - 7 OE CE WE V CC VS S RDY/BUSY RES DESCRIPTION A ddress Data Input/Output Output Enable Chip Enable Write Enable Power Supply Ground Ready/Busy Reset
28C011T
Memory
TABLE 2. 28C011T ABSOLUTE MAXIMUM RATINGS
PARAMETER Supply Voltage (Relative to VSS) Input Voltage (Relative to VSS) Operating Temperature Range Storage Temperature Range 1. VIN min = -3.0V for pulse width < 50ns.
SYMBOL MIN MAX UNITS
VC C VI N TOPR TSTG
-0.6 -0.5 -55 -65
1
+7.0 +7.0 + 125 + 150
V V
°C °C
TABLE 3. DELTA LIMITS
PARAMETER IC C 1 IC C 2 IC C 3 I LI I LO VARIATION ± 10% ± 10% ± 10% ±10% ±10%
08.20.02 REV 9
All data sheets are subject to change without notice
2
©2002 Maxwell Technologies All rights reserved.
1 Megabit (128K x 8-Bit) EEPROM
TABLE 4. 28C011T RECOMMENDED OPERATING CONDITIONS
PARAMETER Supply Voltage Input Voltage RES_PIN Thermal Impedance -- Flat Package Operating Temperature Range 1. VIL min = 1.0V for pulse width < 50 ns SU B G R O U P S 1 1 1 1 1 1 SYMBOL VCC VIL VIH VH MIN 4.5 -0.31 2.2 VCC -0.5 --55
28C011T
MAX 5 .5 0.8 VCC +0.3 VCC +1 2.17 +125 °C/W
°C
UNITS V V
JC
TOPR
TABLE 5. 28C011T CAPACITANCE1
(TA = 25 °C, f = 1 MHZ) PARAMETER Input Capacitance: VIN = 0V 1. Guaranteed by design. 2. Guaranteed by design.
2 2
SYMBOL CIN COUT
MIN ---
MAX 6 12
UNITS pF pF
Memory
Output Capacitance: VOUT = 0V
TABLE 6. 28C011T DC ELECTRICAL CHARACTERISTICS
(VCC = 5V ± 10%, TA = -55 TO +125 °C, UNLESS OTHERWISE SPECIFIED) PARAMETER Input Leakage Current Output Leakage Current Standby VCC Current Operating VCC Current TEST CONDITION VCC = 5.5V, VIN = 5.5V VCC = 5.5V, VOUT = 5.5V/0.4V CE = VCC CE = VIH IOUT = 0mA, Duty = 100%, Cycle = 1µs at VCC = 5.5V IOUT = 0mA, Duty = 100%, Cycle = 150ns at VCC = 5.5V Input Voltage RES_PIN Output Voltage IOL = 2.1 mA IOH = -0.4 mA
08.20.02 REV 9
SUBGROUPS SYMBOL 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 VI L VI H VH VO L VOH IIL I LO IC C 1 I CC2 IC C 3
MIN -------2.2 VC C 0.5 -2.4
MAX 21 2 20 1 15 50 0.8 --0.4 --
UNITS µA µA µA mA mA
V
V
All data sheets are subject to change without notice
3
©2002 Maxwell Technologies All rights reserved.
1 Megabit (128K x 8-Bit) EEPROM
1. ILI on RES = 100 uA max.
28C011T
TABLE 7. 28C011T AC ELECTRICAL CHARACTERISTICS FOR READ OPERATION 1
(VCC = 5V + 10%, TA = -55 TO +125 °C) PARAMETER Address Access Time CE = OE = VIL, WE = VIH -120 -150 -200 Chip Enable Access Time OE = VIL, WE = VIH -120 -150 -200 Output Enable Access Time CE = VIL, WE = VIH -120 -150 -200 Output Hold to Address Change CE = OE = VIL, WE = VIH -120 -150 -200 Output Disable to High-Z 2 CE = VIL, WE = VIH -120 -150 -200 CE = OE = VIL, WE = VIH -120 -150 -200 RES to Output Delay3 CE = OE = VIL, WE = VIH -120 -150 -200 SUBGROUPS 9, 10, 11 SYMBOL tA C C ---9, 10, 11 tCE ---9, 10, 11 tOE 0 0 0 9, 10, 11 tOH 0 0 0 9, 10, 11 tD F 0 0 0 0 0 0 50 50 60 300 350 450 ns 0 0 0 400 450 650 ---ns 75 75 100 ns 120 150 200 ns 120 150 200 ns MIN MAX UNITS ns
Memory
tDFR
9, 10, 11
tR R
1. Test conditions: Input pulse levels - 0.4V to 2.4V; input rise and fall times < 20ns; output load - 1 TTL gate + 100pF (including scope and jig); reference levels for measuring timing - 0.8V/1.8V. 2. tDF and tDFR are defined as the time at which the output becomes an open circuit and data is no longer driven. 3. Guaranteed by design.
08.20.02 REV 9
All data sheets are subject to change without notice
4
©2002 Maxwell Technologies All rights reserved.
1 Megabit (128K x 8-Bit) EEPROM
28C011T
TABLE 8. 28C011T AC ELECTRICAL CHARACTERISTICS FOR BYTE ERASE AND BYTE WRITE OPERATIONS
(VCC = 5V + 10%, TA = -55 TO +125 °C) PARAMETER Address Setup Time -120 -150 -200 Chip Enable to Write Setup Time (WE controlled) -120 -150 -200 Write Pulse Width CE controlled -120 -150 -200 WE controlled -120 -150 -200 Address Hold Time -120 -150 -200 Data Setup Time -120 -150 -200 Data Hold Time -120 -150 -200 Chip Enable Hold Time (WE controlled) -120 -150 -200 Write Enable to Write Setup Time (CE controlled) -120 -150 -200 Write Enable Hold Time (CE controlled) -120 -150 -200 SUB GROUP S 9, 10, 11 SYMBOL tA S M I N1 0 0 0 0 0 0 MAX ---ns ---ns 200 250 350 150 250 350 150 150 200 75 100 200 10 10 20 0 0 0 ---U NITS ns
9, 10, 11
tCS
9, 10, 11 tC W
tW P
Memory
---ns ---ns ---ns ------ns
9, 10, 11
tA H
9, 10, 11
tDS
9, 10, 11
tDH
9, 10, 11
tCH
9, 10, 11
t WS 0 0 0 ----
ns
9, 10, 11
t WH
ns 0 0 0 ----
08.20.02 REV 9
All data sheets are subject to change without notice
5
©2002 Maxwell Technologies All rights reserved.
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