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Part: 28LV010RPFI25
Category:
Memory
Description: 3.3V 1 Megabit (128K X 8-bit) - EePROM
Company: Maxwell Technologies
Datasheet: Download 28LV010RPFI25 datasheet File size : 1863 kB
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Datasheet text preview:
28LV010
3.3V 1 Megabit (128K x 8-Bit) EEPROM
VCC VSS RES OE CE WE RES A0 A6 Address Buffer and Latch A7 A16 Data Latch Y Decoder Y Gating I/O Buffer and Input Latch Control Logic Timing High Voltage Generator I/O0 I/O7 RDY/Busy
X Decoder
Memory Array
Logic Diagram
Memory
FEATURES:
· 3.3V low voltage operation 128K x 8 Bit EEPROM · RAD-PAK® radiation-hardened against natural space radiation · Total dose hardness: - > 100 krad (Si), depending upon space mission · Excellent Single Event Effects: - SELTH > 84 MeV/mg/cm2 - SEUTH > 37 Mev/mg/cm2 (read mode) - SEU saturated cross section = 3E-6 cm2 (read mode) - SEUTH = 11.4 Mev/mg/cm2 (write mode) - SEU saturated cross section = 5E-3 cm2 (write mode) with hard errors · Package: - 32 Pin RAD-PAK® flat pack - 32 Pin RAD-PAK® DIP - JEDEC-approved byte-wide pinout · Address Access Time: - 200, 250 ns maximum access times available · High endurance: - 10,000 erase/write (in Page Mode), 10-year data retention · Page write mode: - 1 to 128 bytes · Automatic programming - 10 ms automatic page/byte write · Low power dissipati o n - 20 mW/MHz active current (typ.) - 72 µ W standby (maximum)
DESCRIPTION:
Maxwell Technologies' 28LV010 high density, 3.3V, 1 Megabit EEPROM microcircuit features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. The 28LV010 is capable of in-system electrical Byte and Page programmability. It has a 128-Byte Page Programming function to make its erase and write operations faster. It also features Data Polling and a Ready/Busy signal to indicate the completion of erase and programming operations. In the 28LV010, hardware data protection is provided with the RES pin, in addition to noise protection on the WE signal and write inhibit on power on and off. Meanwhile, software data protection is implemented using the JEDEC-optional Standard algorithm. The 28LV010 is designed for high reliability in the most demanding space applications. Maxwell Technologies' patented RAD-PAK® packaging technology incorporates radiation shielding in the microcircuit package. It eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or space mission. In a GEO orbit, RAD-PAK provides greater than 100 krad (Si) radiation dose tolerance. This product is available with screening up to Class S.
03.14.03 REV 6
All data sheets are subject to change without notice
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(858) 503-3300 - Fax: (858) 503-3301- www.maxwell.com
©2001 Maxwell Technologies All rights reserved.
3.3V 1 Megabit (128K x 8-Bit) EEPROM
TABLE 1. 28LV010 PINOUT DESCRIPTION
PIN SYMBOL DESCRIPTION A ddress In p u t / O u t p u t Output E nable Chip Enable Write Enable Power Supply Ground Ready/Busy Reset 12-5, 27, 26, 23, 25, A0-A16 4, 28, 3, 31, 2 13-15, 17-21 24 22 29 32 16 1 30 I/O 0 - I/O7 OE CE WE VCC VSS RDY/BUSY RES
28LV010
Memory
TABLE 2. 28LV010 ABSOLUTE MAXIMUM RATINGS
PARAMETER Supply Voltage (Relative to Vss) Input Voltage (Relative to Vss) Package Weight SYMBOL VCC VIN RP RT RD Thermal Impedence Operating Temperature Range Storage Temperature Range 1. VIN min = -3.0 V for pulse width < 50 ns. FJC TOPR TSTG -55 -65 MIN -0.6 -0.5
1
TYP
MAX 7.0 7.0
UNIT V V Grams
7.38 2.69 10.97 2.17 125 150
° C /W °C °C
TABLE 3. DELTA LIMITS1
PARAMETER ICC1 ICC2 ICC3A VARIATION2 ± 10% ± 10% ± 10%
± 10% ICC3B 1. Parameters are measured and recorded as Deltas per MIL-STD-883 for Class S Devices 2. Specified in Table 6
03.14.03 REV 6
All data sheets are subject to change without notice
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©2001 Maxwell Technologies All rights reserved.
3.3V 1 Megabit (128K x 8-Bit) EEPROM
TABLE 4. 28LV010 RECOMMENDED OPERATING CONDITIONS
PARAMETER Supply Voltage Input Voltage RES_PIN Operating Temperature Range 1. VIL min = -1.0 V for pulse width < 50 ns. 2. VIH min = 2.2 V for VCC = 3.6 V. SYMBOL VCC VIL VIH VH TOPR MIN 3.0 -0.3 1 2.0 2 VCC-0.5 -55
28LV010
MAX 3 .6 0.8 VCC+0.3 VCC +1 +125 UNIT V V
°C
TABLE 5. 28LV010 CAPACITANCE
(TA = 25° C, F = 1MHZ) PARAMETER Input Capacitance: VIN = 0V 1 Output Capacitance: VOUT = 0V 1 1. Guaranteed by design. S YMBOL CIN COUT MI N --MAX 6 12 UNIT
Memory
pF pF
TABLE 6. 28LV010 DC ELECTRICAL CHARACTERISTICS
(VCC = 3.3V ± 0.3, TA = -55 TO +125° C UNLESS OTHERWISE SPECIFIED) PARAMETER Input Leakage Current Standby VCC Current Operating VCC Current TEST CONDITIONS VCC = 3.6V, VIN = 3.6V CE = VCC CE = VIH IOUT = 0mA, Duty = 100%, Cycle = 1 µ s @ VCC = 3.3V IOUT = 0mA, Duty = 100%, Cycl e = 200 ns @ V C C = 3 .3 V SYMBOL SUBGROUPS ILI ILO ICC1 ICC2 ICC3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 MI N ------MAX 21 2 20 1 6 15 VIL VIH VH VOL VOH VOH 1, 2, 3 -2.02 VCC-0.5 -VCC x 0.8 VCC- 0.3 0.8 --0.4 --V UNIT µA µA µA mA mA
Output Leakage Current VCC = 3.6V, VOUT = 3.6V/0.4V
Input Voltage
IOL = 2.1 mA IOH = - 0.4 mA IOH = - 0.1 mA 1. ILI on RES = 100 uA max. 2. VIH min = 2.2V for VCC = 3.6V. 3. Rdy/Bsy is an open collector output.
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Output Voltage3
1, 2, 3
V
All data sheets are subject to change without notice
3
©2001 Maxwell Technologies All rights reserved.
3.3V 1 Megabit (128K x 8-Bit) EEPROM
TABLE 7. 28LV010 AC CHARACTERISTICS FOR READ OPERATION1
(VCC = 3.3V ± 10%, TA = -55 TO +125 ° C UNLESS OTHERWISE SPECIFIED) PARAMETER Address Access Time -200 -250 Chip Enable Access Time -200 -250 Output Enable Access Time -200 -250 TEST CONDITIONS CE = OE = VIL, WE = VIH tCE OE = VIL, WE = VIH tOE CE = VIL, WE = VIH tOH 9, 10, 11 0 0 tD F CE = VIL, WE = VIH tDFR CE =OE= VIL, WE = VIH tR R CE = OE = VIL WE = VIH 9, 10, 11 0 0 9, 10, 11 0 0 9, 10, 11 0 0 9, 10, 11 0 0 9, 10, 11 --SYMBOL tA C C SUBGROUPS 9, 10, 11 --MIN
28LV010
MAX 200 250
UNIT ns
ns 200 250 ns 110 120 ns --ns 50 50 ns 300 350 ns 525 600
Output Hold to Address Change -200 CE = OE = VIL, WE = VIH -250 Output Disable to High-Z2 -200 -250 Output Disable to High-Z -200 -250 RES to Output Delay 3 -200 -250
Memory
1. Test conditions: Input pulse levels - 0.4V to 2.4V; input rise and fall times < 20 ns; output load - 1 TTL gate + 100 pF (including scope and jig); reference levels for measuring timing - 0.8V/1.8V. 2. tDF and tDFR is defined as the time at which the output becomes an open circuit and data is no longer driven. 3. Guaranteed by design.
03.14.03 REV 6
All data sheets are subject to change without notice
4
©2001 Maxwell Technologies All rights reserved.
3.3V 1 Megabit (128K x 8-Bit) EEPROM
28LV010
TABLE 8. 28LV010 AC ELECTRICAL CHARACTERISTICS FOR ERASE AND WRITE OPERATIONS
(VCC = 3.3V ± 10%, TA = -55 TO +125 ° C UNLESS OTHERWISE SPECIFIED) PARAMETER Address Setup Time -200 -250 Chip Enable to Write Setup Time (WE controlled) -200 -250 Write Pulse Width (CE controlled) -200 -250 Write Pulse Width (WE controlled) -200 -250 Address Hold Time -200 -250 Data Setup Time -200 -250 Data Hold Time -200 -250 Chip Enable Hold Time (WE controlled) -200 -250 Write Enable to Write Setup Time (CE controlled) -200 -250 Write Enable Hold Time (CE controlled) -200 -250 Output Enable to Write Setup Tim -200 -250 Output Enable Hold Time -200 -250 Write Cycle Time 1,2 -200 -250 SYMBOL tA S SUBGROUPS 9, 10, 11 0 0 tCS 9, 10, 11 0 0 tC W 9, 10, 11 200 250 tW P 9, 10, 11 200 250 tA H 9, 10, 11 125 150 tDS 9, 10, 11 100 100 tDH 9, 10, 11 10 10 tCH 9, 10, 11 0 0 tW S 9, 10, 11 0 0 tW H 9, 10, 11 0 0 tO E S 9, 10, 11 0 0 tO E H 9, 10, 11 0 0 tW C 9, 10, 11 --15 15 --ms --ns --ns --ns --ns --ns --ns --ns --ns --ns --ns --ns MIN MAX UNIT ns
Memory
03.14.03 REV 6
All data sheets are subject to change without notice
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©2001 Maxwell Technologies All rights reserved.
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