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Part: 7206FRPFI30
Category:
Memory
Description: High-speed Epi-cmos (16K X 9-bit) Parallel Fifo
Company: Maxwell Technologies
Datasheet: Download 7206FRPFI30 datasheet File size : 3700 kB
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Datasheet text preview:
High-Speed Epi-CMOS (16K x 9-Bit) Parallel FIFO
I
7206F
7206F
Logic Diagram
Memory
FEATURES:
· 16K x 9-bit organization · RAD-PAK® radiation-hardened against natural space radiation · A total dose hardness: - > 100 krad (Si), depending upon space mission · Excellent Single Event Effect - SELTH: > 100 MeV/mg/cm2 - SEUTH: = 7 MeV/mg/cm2 - SEU saturated cross section: 1.5E-5 cm2/bit Asynchronous Read/Write operation High speed CMOS epi technology Retransmit capability Propagation time (max access time): - 15 ns, 20 ns, 30 ns, 40 ns, 50 ns Status flag: empty, half-full, full Fully expandable in both word depth and width Bi-directional applications Low power Battery back-up operation TTL compatible Package: 28 pin RAD-PAK® flat package
DESCRIPTION:
Maxwell Technologies' 7206F high speed FIFO microcircuit features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. It is organized such that the data is read in the same sequential order that it was written. Full and Empty flags are provided to prevent overflow and underflow. The expansion logic allows unlimited expansion capability in work size and depth with no timing penalties. Twin address pointers automatically generate internal read and write addresses, and automatically increment with the write and read pin. The 7206F 9-bits wide data are used in data communications applications where a parity bit for error checking is necessary. The retransmit capability allows the read pointer to be reset to its initial position without affecting the write pointer. Maxwell Technologies' patented RAD-PAK® packaging technology incorporates radiation shielding in the microcircuit package. It eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or space mission. In a GEO orbit, RAD-PAK provides greater than 100 krad (Si) radiation dose tolerance. This product is available with screening up to Class S.
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1000572
12.19.01 Rev 3
All data sheets are subject to change without notice
1
(858) 503-3300- Fax: (858) 503-3301- www.maxwell.com
©2001 Maxwell Technologies All rights reserved.
High-Speed Epi-CMOS (16K x 9-Bit) Parallel FIFO
TABLE 1. 7206F PINOUT DESCRIPTION
PIN 1 2-6 7 8 9 - 13 14 15 16 - 19 20 21 22 23 24 - 27 28 SYMBOL W I8, I3-I0 XI Write Enable In p u t s Expansion In Full Flag Outputs Gr o u n d Read Enable Outputs Expansion Out/Half Full Flag Empty Flag Reset First Load/Retransmit Inputs Power Supply DESCRIPTION
7206F
FF
Q0 - Q3, Q8 GND R Q4 - Q7 XO/HF EF RS FL/RT I7 - I4 VCC
Memory
TABLE 2. 7206F ABSOLUTE MAXIMUM RATINGS
PARAMETER Positive Supply Voltage Input or Output Voltage Storage Temperature Range Operating Temperature Range SYMBOL VCC VIN TS TA MIN -0.3 GND -0.3 -65 -55 MAX 7.0 VCC +0.3 150 125 U NIT V V
°C °C
TABLE 3. 7206F RECOMMENDED OPERATING CONDITIONS
PARAMETER Positive Supply Voltage High Level Input Voltage Low Level Voltage Thermal Impedance Operating Temperature Range SYMBOL VCC VIH VI L TA MIN 4.5 2.2 ---55 MAX 5 .5 -0.8 0.93 125 U NIT V V V °C/W
°C
JC
1000572
12.19.01 Rev 3
All data sheets are subject to change without notice
2
©2001 Maxwell Technologies All rights reserved.
High-Speed Epi-CMOS (16K x 9-Bit) Parallel FIFO
TABLE 4. 7206F DC ELECTRICAL CHARACTERISTICS (VCC = 5V ± 10%, TA = -55 TO +125 °C UNLESS OTHERWISE SPECIFIED)
PARAMETER Operating Supply Current -15 -20 -30 -40 -50 Standby Supply Current (R = W = RS = FLVRT = VIH) Power Down Current (All Input = VCC) Input Leakage Current (0.4V < VIN < VCC) Output Leakage Current (R = VIH, 0.4V < VOUT < VCC) Input Low Input High Voltage1 Voltage1 SYMBOL IC C O P MIN ----------2.2 -2.4 --MAX 165 160 150 140 130 5 400 ±1 ±1 0.8 -0.4 -10 10
7206F
U NIT mA
IC C S B IC C P D I LI I LO VI L VI H VO L VOH CIN COUT
mA µA µA µA V V
Memory
Output Low Voltage (VCC min, IOL = 8mA) Output High Voltage (VCC min, IOH = -2mA) Input Capacitance
2 2
V V pF pF
Output Capacitance
1. VIH max = VCC + 0.3V. VIL min = -0.3V or -1.0V pulse width 50 ns. 2. Guaranteed by design.
TABLE 5. 7206F TIMING CHARACTERISTICS 1
(VCC = 5V ± 10%, TA = -55 TO +125 °C UNLESS OTHERWISE SPECIFIED) PARAMETER Read Cycle Read Cycle Time -15 -20 -30 -40 -50 Access Time -15 -20 -30 -40 -50 tR C ns 25 30 40 50 65 ----------ns 15 20 30 40 50 SYMBOL MIN MAX UNITS
tA
1000572
12.19.01 Rev 3
All data sheets are subject to change without notice
3
©2001 Maxwell Technologies All rights reserved.
High-Speed Epi-CMOS (16K x 9-Bit) Parallel FIFO
TABLE 5. 7206F TIMING CHARACTERISTICS 1
(VCC = 5V ± 10%, TA = -55 TO +125 °C UNLESS OTHERWISE SPECIFIED) PARAMETER Read Recovery Time -15 -20 -30 -40 -50 Read Pulse Width 2 -15 -20 -30 -40 -50 Read Low to Data Low-Z 3 -15 -20 -30 -40 -50 Write HIGH to Data Low-Z 3,4 -15 -20 -30 -40 -50 Data Valid from Read High -15 -20 -30 -40 -50 Read High to Data Bus High-Z 3 -15 -20 -30 -40 -50 SYMBOL tR R MIN 10 10 10 10 15 15 20 30 40 50 0 0 5 5 5 3 3 5 5 5 5 5 5 5 5 -----MAX ------
7206F
UNITS ns
tR P W
ns -----ns -----ns -----ns -----ns 15 15 20 25 30
tR L Z
Memory
tWLZ
tD V
tRHZ
1000572
12.19.01 Rev 3
All data sheets are subject to change without notice
4
©2001 Maxwell Technologies All rights reserved.
High-Speed Epi-CMOS (16K x 9-Bit) Parallel FIFO
TABLE 5. 7206F TIMING CHARACTERISTICS 1
(VCC = 5V ± 10%, TA = -55 TO +125 °C UNLESS OTHERWISE SPECIFIED) PARAMETER Write Cycle Write Cycle Time -15 -20 -30 -40 -50 Write Pulse Width 2 -15 -20 -30 -40 -50 Write Recovery Time -15 -20 -30 -40 -50 Data Set-up Time -15 -20 -30 -40 -50 Data Hold Time -15 -20 -30 -40 -50 Reset Cycle Reset Cycle Time -15 -20 -30 -40 -50 Reset Pulse Width 2 -15 -20 -30 -40 -50
12.19.01 Rev 3
7206F
MAX UNITS ns
SYMBOL tW C
MIN
25 30 40 50 65 15 20 30 40 50 10 10 10 10 15 9 12 18 24 30 0 0 0 0 5
-----ns -----ns -----ns -----ns -----ns
tWPW
tW R
Memory
tD S
tD H
tRSC
25 30 40 50 65 15 20 30 40 50
-----ns ------
tR S
1000572
All data sheets are subject to change without notice
5
©2001 Maxwell Technologies All rights reserved.
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