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Details, datasheet, quote on part number:1N4448
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| Part: | 1N4448 |
| Category: | Discrete => Diodes & Rectifiers => Switching Diodes |
| Description: | Package Type : DO-35, if : , VRM : 100V |
| Company: | Micro Commercial Components |
| Datasheet: | Download 1N4448 datasheet File size : 162 kB |
| Request For quote: | Find where to buy 1N4448
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Datasheet text preview:
MCC
Features
· · ·
omponents 20736 Marilla Chatsworth !"# $
% !"#
1N4448
Low Current Leakage Metalurgically Bonded Construction Low Cost
500mW 100Volt Switching Diode
DO-35
Maximum Ratings
· · · Operating Temperature: -55°C to +150°C Storage Temperature: -55°C to +150°C Maximum Thermal Resistance; 35 °C/W Junction To Ambient
Electrical Characteristics @ 25°C Unless Otherwise Specified
Reverse Voltage Peak Reverse Voltage Average Rectified Current Power Dissipation Junction Temperature Peak Forward Surge Current Instantaneous Forward Voltage Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Junction Capacitance Reverse Recovery Time VR VRM IO PTOT TJ IFSM VF 75V 100V 150mA 500mW 150°C Resistive Load f >= 50Hz
D
A
Cathode Mark B
D
500mA
t<1s
C
1.0V(MAX) IFM = 100mA; 0.62-0.72V I FM = 5.0mA
VR=20Volts TJ = 25°C TJ = 150°C VR=75Volts CJ Measured at 1.0MHz, VR=4.0V Tr r 4nS IF=10mA VR = 6V RL=100 *Pulse test: Pulse width 300 µsec, Duty cycle 2% IR 25nA 50µA 5uA 4pF
DIMENSIONS INCHES MIN ------1.000 MM MIN ------25.40
DIM A B C D
MAX .166 .079 .020 ---
MAX 4.2 2.00 .52 ---
NOTE
Revision: 3
www.mccsemi.com
2002/12/31
1N4448
Figure 1 Typical Forward Characteristics 200 100 60 40 20 M i l l i A m p s 10 6 4 2 25°C 1 .6 .4 .2 .1 .4 .6 .8 Volts Instantaneous Forward Current - Amperesversus Instantaneous Forward Voltage - Volts 1.0 1.2 1.4 0 100 400 600
MCC
Figure 2 Forward Derating Curve 500
300 MilliWatts 200
Single Phase, Half Wave 60Hz Resistive or Inductive Load 0 50 75 100 °C 125 150 175
Admissable Power Dissipation - MilliWattsversus Ambient Temperature - °C
Figure 3 Junction Capacitance
10 6 4 2 pF 1 .6 .4 .2 .1 .1 .2 .4 1 Volts 2 4 10 20 40 100 200 400 1000 TJ=25°C
Junction Capacitance - pFversus Reverse Voltage - Volts
Revision: 3
www.mccsemi.com
2002/12/31
1N4448
Figure 4 Typical Reverse Characteristics 1000 600 400 200 100 60 40 20 10 NanoAmps 6 4 2 1 .6 .4 .2 .1 20 40 60 TJ Instantaneous Reverse Leakage Current - NanoAmperes versus Junction Temperature - °C 80 100 120 140 TA=25°C TA=100°C MilliAmps
MCC
Figure 5 Peak Forward Surge Current 600 500 400 300 200 100 0 1 2 4 6 8 10 Cycles Peak Forward Surge Current - Amperesversus Number Of Cycles At 60Hz - Cycles 20 40 60 80 100
Revision: 3
www.mccsemi.com
2002/12/31
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