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Details, datasheet, quote on part number:2N4920
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| Part: | 2N4920 |
| Category: | Discrete => Transistors => Bipolar |
| Description: | Package Type : TO-126 Plastic-encapsulate Bipolar Transistor, PC : 30W, Vceo : 80V, ic : 1.0A |
| Company: | Micro Commercial Components |
| Datasheet: | Download 2N4920 datasheet File size : 206 kB |
| Request For quote: | Find where to buy 2N4920
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Datasheet text preview:
MCC
Features
· · · · · · ·
omponents 20736 Marilla Street Chatsworth !"# $
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2N4920
Designed for driver circuits, switching, and amplifier applications. These high-performance plastic devices feature. Medium-Power Plastic PNP Silicon Transistors. Low Saturation Voltage: VCE(sat) =0.6V(Max) @ IC=1.0A Excellent Power Dissipation Due to Thermopad Construction: PD=30W @ TC= 25OC Excellent Safe Operating Area Gain Specified to IC=1.0A Complement to NPN 2N4923
PNP General Purpose Power Transistors
A K D
Maximum Ratings*
Symbol V CEO V CBO V EBO IC IB PD TJ TS T G Symbol RJ C Symbol Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous(1) Base Current Total Device Dissipation Derate above 25OC Operating Junction Temperature Storage Temperature
(2)
Rating 80 80 5.0 1.0 3.0 1.0 30 0.24 -55 to +150 -55 to +150 Max 4.16 Min Max
Unit V V V A A W W/OC O C O C Unit C/W
E
R B
F G H L C
M
N
P
Thermal Characteristics
Rating Thermal Resistance, Junction to Case Parameter
O
Electrical Characteristics @ 25OC Unless Otherwise Specified
Units
1
2 J
3 J Q EMITTER COLLECTOR BASE
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(3) 80 --Vdc (IC=0.1Adc, IB =0) ICEO Collector Cutoff Current --0.5 mAdc (VCE=40Vdc, IB =0) ICEX Collector Cutoff Current --0.1 mAdc (VCE=Rated VCEO, VEB(off) =1.5Vdc) ICBO Collector Cutoff Current --0.1 mAdc (VCB=Rated VCEO, IE =0) IE B O Emitter Cutoff Current --1.0 mAdc (VB E =5.0Vdc, IC=0) * Indicates JEDEC Registered Data for 2N4918 Series (1) The 1.0A maximum IC value is based upon JEDEC current gain requirements. The 3.0A maximum value is based upon actual current-handling capability of the device. (2) Recommend use of thermal compound for lowest thermal resistance. (3) Pulse Test: PW=300us, Duty Cycle=2.0% VCEO(sus)
PIN 1. PIN 2. PIN 3.
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Revision: 2 2003/04/30
2N4920
MCC
Parameter Min Max Units
Symbol
ON CHARACTERISTICS
hFE DC Current Gain (1) (V CE=1.0Vdc, IC=50mAdc) (V CE=1.0Vdc, IC=500mAdc) (V CE=1.0Vdc, IC=1.0Adc) Collector-Emitter Saturation Voltage (1) (IC=1.0Adc, IB =0.1Adc) Base-Emitter Saturation Voltage (1) (IC=1.0Adc, IB =0.1Adc) Base-Emitter On Voltage (1) (IC=1.0Adc, VCE=1.0Vdc) 40 30 10 ------150 0.6 1.3 1.3 --Vdc Vdc Vdc
VCE(sat) VBE(sat) VBE(on)
SMALL-SIGNAL CHARACTERISTICS
fT Current-Gain Bandwidth Product (IC=250mAdc, V CE=10Vdc, f=1.0MHz) COB Output Capacitance (V CB=10Vdc, IE =0, f=100KHz) hfe Small-Signal Current Gain (IC=250mAdc, V CE=10Vdc, f=1.0KHz) * Pulse Test: Pulse Width=300us, Duty Cycle=2.0% 3.0 --25 --100 --MHz pF ---
40 PD, POWER DISSIPATION (WATTS)
30
20
10
0
25
50
75 100 TC, CASE TEMPERATURE (°C)
125
150
Figure 1. Power Derating
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Revision: 2 2003/04/30
2N4920
VBE(off) 0 Vin APPROX -11 V t1 5.0 VCC Vin RC RB SCOPE t, TIME ( µs) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 VCC = 30 V 3.0 2.0 VCC = 30 V IC/IB = 20
MCC
IC/IB = 10, UNLESS NOTED TJ = 25°C TJ = 150°C tr VCC = 60 V Cjd << Ceb
t2 Vin APPROX -11 V 0
APPROX 9.0 V
+4.0 V
RB and RC varied to obtain desired current levels
VCC = 60 V
td
VBE(off) = 2.0 V
t3 TURN-OFF PULSE
t1 < 15 ns 100 < t2 < 500 µs t3 < 15 ns DUTY CYCLE 2.0%
VCC = 30 V VBE(off) = 0 20 30 10
50 70 100 200 300 IC, COLLECTOR CURRENT (mA)
500 700 1000
Figure 2. Switching Time Equivalent Test Circuit
Figure 3. TurnOn Time
r(t) , TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0 0.7 0.5 0.3 0.2
D = 0.5 0.2 0.1 0.05 0.01 SINGLE PULSE P(pk) JC(t) = r(t) JC JC = 4.16°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN t1 READ TIME AT t1 t2 TJ(pk) - TC = P(pk) JC(t) DUTY CYCLE, D = t1/t2 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 t, TIME (ms) 10 20 30 50 100 200 300 500 1000
0.1 0.07 0.05 0.03 0.02 0.01 0.01
0.02 0.03
0.05
Figure 4. Thermal Response
10 IC, COLLECTOR CURRENT (AMP) 5.0 2.0 1.0 0.5 0.2 0.1 1.0 SECOND BREAKDOWN LIMITED BONDING WIRE LIMITED THERMALLY LIMIT @ TC = 25°C PULSE CURVES APPLY BELOW RATED VCEO 2.0 3.0 5.0 7.0 10 20 30 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 70 100 TJ = 150°C 5.0 ms 1.0 ms 100 µs
dc
Figure 5. ActiveRegion Safe Operating Area
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Revision: 2 2003/04/30
2N4920
MCC
5.0 IC/IB = 20 3.0 2.0 t f , FALL TIME ( µs) IC/IB = 10 1.0 0.7 0.5 0.3 0.2 IC/IB = 20 TJ = 25°C TJ = 150°C VCC = 30 V IB1 = IB2
5.0 3.0 2.0 t s, STORAGE TIME ( µs) 1.0 0.7 0.5 0.3 0.2
ts = ts - 1/8 tf TJ = 25°C TJ = 150°C IB1 = IB2 10 20 30 200 300 50 70 100 IC, COLLECTOR CURRENT (mA) 500 700 1000
IC/IB = 10
0.1 0.07 0.05
0.1 0.07 0.05
10
20
30
50 70 100 200 300 IC, COLLECTOR CURRENT (mA)
500 700 1000
Figure 6. Storage Time
Figure 7. Fall Time
VCE = 1.0 V TJ = 150°C 25°C -55°C
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
1000 700 500 hFE, DC CURRENT GAIN 300 200 100 70 50 30 20 10 2.0 3.0 5.0 10
1.0 0.8 0.6 TJ = 25°C 0.4 0.2 0 0.2 0.3 0.5 IC = 0.1 A 0.25 A 0.5 A 1.0 A
20 30 50 100 200 300 500 IC, COLLECTOR CURRENT (mA)
1000 2000
1.0
2.0 3.0 5.0 10 20 30 IB, BASE CURRENT (mA)
50
100
200
Figure 8. Current Gain
Figure 9. Collector Saturation Region
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Revision: 2 2003/04/30
2N4920
RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS)
MCC
1.5 IC = 10 ICES VCE = 30 V 1.2 VOLTAGE (VOLTS) 0.9 0.6 0.3 0 2.0 3.0 5.0 VCE(sat) @ IC/IB = 10 10 20 30 50 100 200 300 500 1000 2000 IC, COLLECTOR CURRENT (mA) VBE(sat) @ IC/IB = 10 VBE @ VCE = 2.0 V TJ = 25°C
108 107 106 105 104 103 ICES VALUES OBTAINED FROM FIGURE 13 0 30 60 90 120 150
IC ICES IC = 2x ICES
TJ, JUNCTION TEMPERATURE (°C)
Figure 10. Effects of BaseEmitter Resistance
Figure 11. "On" Voltage
102 TEMPERATURE COEFFICIENTS (mV/ °C) IC, COLLECTOR CURRENT ( µA) 101 100 10-1 10-2 104 REVERSE 103 -0.2 -0.1 TJ = 150°C
+2.5 +2.0 +1.5 +1.0 +0.5 0 -0.5 -1.0 -1.5 -2.0 -2.5 2.0 3.0 5.0 VB FOR VBE 10 20 30 50 100 200 300 500 1000 2000 *VC FOR VCE(sat) TJ = -55°C to +100°C *APPLIES FOR IC/IB < hFE @ VCE + 1.0 V 2 TJ = 100°C to 150°C
100°C IC = ICES 25°C FORWARD 0 +0.1 +0.2
VCE = 30 V
+0.3
+0.4
+0.5
VBE, BASE-EMITTER VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA)
Figure 12. Collector CutOff Region
Figure 13. Temperature Coefficients
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Revision: 2 2003/04/30
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